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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT69M5LFVWQ-13

Name: DMT69M5LFVWQ-13
Brand: Diodes Incorporated
SKU: DMT69M5LFVWQ-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT69M5LFVWQ-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: DMT69M5LFVWQ-13.pdf

Description:: MOSFET BVDSS: 41V~60V POWERDI333

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Product details

Overview

DMT69M5LFVWQ-13 from Diodes Incorporated is an AEC-Q101 qualified 60V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, delivering 8.3mΩ R_DS(ON) at V_GS = 10V and 40.6A continuous drain current at T_C = +25°C. It supports automotive backlighting, DC-DC converters, and power management functions with 100% production-tested UIS robustness.

For engineers reviewing the DMT69M5LFVWQ-13 datasheet, DMT69M5LFVWQ-13 pinout, DMT69M5LFVWQ-13 application, or DMT69M5LFVWQ-13 equivalent, key selection criteria include its wettable flank terminals for optical inspection, thermally efficient 6.1°C/W R_θJC, AEC-Q101 qualification, and low 12.5mΩ R_DS(ON) at 4.5V gate drive for 3.3V logic compatibility.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in automotive power stages. Its 0.1mH avalanche rating (27.4A I_AS, 37.5mJ E_AS) ensures ruggedness under inductive load transients common in LED drivers and buck converters.

The PowerDI3333-8 package integrates an exposed drain pad for direct thermal coupling to PCB copper, enabling 20.5W power dissipation at T_C = +25°C. Gate charge parameters (Q_g = 28.4nC @ 10V) and dynamic capacitances (C_iss = 1406pF, C_rss = 52pF) are specified for hard-switched 30V applications with 10.5ns turn-on delay.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60V - Supports 48V automotive bus systems with 20% margin against load dump transients.
R_DS(ON) @ 10V	8.3mΩ max - Enables <1.1W conduction loss at 33A in high-current DC-DC output stages.
R_DS(ON) @ 4.5V	12.5mΩ max - Ensures full enhancement with 3.3V microcontroller GPIOs without level-shifting.
I_D Continuous @ T_C	40.6A - Allows single-device implementation in 20–30W automotive power rails.
Q_g @ 10V	28.4nC - Determines gate driver current requirement (~2.8mA avg for 1MHz switching).
R_θJC	6.1°C/W - Permits direct heatsinking via PCB copper, reducing thermal interface resistance.
UIS Tested	100% production-tested - Eliminates need for external snubbers in inductive switching circuits.

Pinout & Package

Package: PowerDI3333-8 (SWP), surface-mount, thermally enhanced with exposed drain pad and wettable flank terminals for automated optical inspection.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control input; requires ≤±20V bias; 1.4–2.5V threshold enables 3.3V logic compatibility.
S	Source	Power return path; three parallel pins reduce source inductance and improve current sharing.
D	Drain	Main power output; eight parallel pins connect to exposed copper pad for low-impedance thermal and electrical path.

Key Features

Feature	Design Value
AEC-Q101 qualified & PPAP capable	Validated for automotive safety-critical subsystems including lighting and body control modules.
Wettable flank terminals	Enables 100% automated optical inspection (AOI) of solder joint integrity on bottom-side terminations.
100% UIS tested in production	Guarantees minimum 27.4A/37.5mJ avalanche capability without derating or screening.
Green, halogen-free construction	Meets JESD204B and RoHS 3 requirements with <900ppm Br+Cl and <1000ppm Sb.
Thermally efficient PowerDI3333-8	Delivers 20.5W power handling at T_C = +25°C-3.7× higher than SO-8 equivalents.

Applications

Automotive LED Backlighting

48V-to-12V Buck Converter

Use Scenario: Driving high-brightness LED strings in instrument clusters and center displays with PWM dimming.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 200–500kHz with 100% duty-cycle capability.

Use Value: Low 8.3mΩ R_DS(ON) minimizes heat generation in confined display enclosures, extending LED lifetime.

Use Scenario: Primary power switch in 48V automotive domain controller power supplies.

IC Role / Device Role / Timing Role: Main switching FET in non-isolated buck regulator delivering up to 30W at 92% efficiency.

Use Value: 12.5mΩ R_DS(ON) at 4.5V gate drive allows direct control from 3.3V MCU, eliminating gate driver ICs.

Engine Control Unit Power Management

ADAS Camera Power Rail

Use Scenario: Load switch for 5V/3.3V auxiliary rails powering sensors and CAN transceivers.

IC Role / Device Role / Timing Role: Low-side power switch with fast 49ns rise time for precise sequencing control.

Use Value: 28.4nC total gate charge enables clean switching edges, reducing EMI in noise-sensitive engine bay environments.

Use Scenario: Power delivery to 12MP image sensor and ISP in rear-view and surround-view cameras.

IC Role / Device Role / Timing Role: Hot-swap protection switch with controlled turn-on to limit inrush current during camera boot.

Use Value: 160A pulsed drain rating withstands capacitor charging surges without failure, ensuring field reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMTH6016LPSQ-13	60V, 5.8mΩ @ 10V, PowerDI5060 package, higher R_θJA (50°C/W)	Better conduction loss but larger footprint and lower thermal efficiency in constrained layouts	Prefer when lowest R_DS(ON) dominates over board area and thermal performance
IPB070N06LGATMA1	60V, 7.0mΩ @ 10V, TO-leadless package, 100% UIS not production-tested	Higher peak current (70A) but no guaranteed avalanche rating for inductive loads	Prefer for high-pulse-current applications where UIS margin is managed externally

Compared with DMTH6016LPSQ-13 and IPB070N06LGATMA1, DMT69M5LFVWQ-13 offers optimal balance of compact PowerDI3333-8 footprint, production-validated UIS robustness, and 4.5V logic-level drive-critical for space-constrained, safety-compliant automotive power stages.

Availability

DMT69M5LFVWQ-13 is available at Aetrix Electronics and suitable for automotive LED backlighting, 48V DC-DC conversion, and engine control unit power management requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for DMT69M5LFVWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

This device belongs to Diodes' AEC-Q101-qualified Power MOSFET product line, engineered specifically for automotive power conversion and load switching where thermal efficiency, avalanche ruggedness, and optical inspectability are mandatory.

FAQ

Is DMT69M5LFVWQ-13 qualified for automotive use?

Yes. It is fully AEC-Q101 qualified, manufactured in IATF 16949 certified facilities, and supported by PPAP documentation. Its -55°C to +150°C operating range, 100% production-tested UIS, and wettable flank terminals meet automotive OEM requirements for lighting, power management, and ADAS subsystems.

What is the maximum continuous drain current at 70°C case temperature?

The maximum continuous drain current is 32.5A at T_C = +70°C, per the Absolute Maximum Ratings table. This value assumes proper PCB thermal design with ≥1-inch² 2oz copper connected to the exposed drain pad, as specified in Note 5 of the datasheet.

Does this MOSFET require a gate resistor for automotive 12V systems?

A gate resistor is recommended to dampen ringing and control dV/dt, especially in noisy automotive environments. With Q_g = 28.4nC and typical 12V gate drive, a 10Ω resistor limits peak gate current to ~1.2A and provides adequate turn-on speed while suppressing oscillation.

Can DMT69M5LFVWQ-13 replace SO-8 MOSFETs in existing designs?

Yes, with layout adaptation. Its PowerDI3333-8 footprint is smaller than SO-8 but requires revised pad geometry per Diodes' suggested layout (D2 = 2.3–2.7mm, E3 = 0.95–1.35mm). Thermal performance improves significantly due to lower R_θJC (6.1°C/W vs. ~15°C/W for SO-8), allowing higher current density without heatsinks.

DMT69M5LFVWQ-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 14.8A (Ta), 40.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.3mOhm @ 13.5A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 28.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1406 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.74W (Ta), 20.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerDI3333-8 (SWP) Type UX

DMT69M5LFVWQ-13 FAQ

1.How can I place an order for DMT69M5LFVWQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT69M5LFVWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT69M5LFVWQ-13 reliable?

The price and inventory of DMT69M5LFVWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT69M5LFVWQ-13 is usually 5 days.

3.What payment methods are accepted for DMT69M5LFVWQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT69M5LFVWQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT69M5LFVWQ-13?

DMT69M5LFVWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT69M5LFVWQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT69M5LFVWQ-13?

For technical support, including DMT69M5LFVWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT69M5LFVWQ-13 requirements.

6.How does Aetrix verify that DMT69M5LFVWQ-13 is sourced from the original manufacturer or authorized distributors?

All DMT69M5LFVWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT69M5LFVWQ-13 meets industry standards.

7.What is the process for return or replacement of DMT69M5LFVWQ-13?

All DMT69M5LFVWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT69M5LFVWQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT69M5LFVWQ-13 part is unused and in its original packaging.

Return procedure for DMT69M5LFVWQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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