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Diodes Incorporated DMT69M5LFVWQ-7

Name: DMT69M5LFVWQ-7
Brand: Diodes Incorporated
SKU: DMT69M5LFVWQ-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT69M5LFVWQ-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: DMT69M5LFVWQ-7.pdf

Description:: MOSFET BVDSS: 41V~60V POWERDI333

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Inventory:4,260

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Product details

Overview

DMT69M5LFVWQ-7 from Diodes Incorporated is an AEC-Q101 qualified 60V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, delivering 8.3 mΩ R_DS(ON) at V_GS = 10 V and 40.6 A continuous drain current at T_C = +25°C. It serves as a high-efficiency power switch in automotive DC-DC converters and backlighting circuits.

For engineers reviewing the DMT69M5LFVWQ-7 datasheet, DMT69M5LFVWQ-7 pinout, DMT69M5LFVWQ-7 application, or DMT69M5LFVWQ-7 equivalent, key selection criteria include its wettable flank package for automated optical inspection, 100% production-tested UIS robustness, and thermally optimized R_θJC of 6.1 °C/W for high-density automotive power designs.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in 12 V/24 V automotive systems. Its gate threshold voltage (1.4–2.5 V) enables reliable turn-on with standard logic-level drivers, while its 52 pF Crss and 28.4 nC total gate charge support efficient PWM control in synchronous buck topologies.

The device integrates a robust body diode with 26.7 ns reverse recovery time and 44.8 nC Q_RR, enabling stable operation in freewheeling paths without external Schottky supplementation. Its 37.5 mJ E_AS rating ensures survivability under inductive load transients common in motor drive and LED driver applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Withstands peak system voltages up to 60 V in 24 V automotive rails with margin.
R_DS(ON) @ 10 V	8.3 mΩ - Enables <1 W conduction loss at 40 A, critical for thermal management in sealed modules.
I_D Continuous	40.6 A @ T_C = +25°C - Supports high-current power stages without parallel devices in compact layouts.
Q_g @ 10 V	28.4 nC - Determines gate drive power requirement; compatible with standard 1–2 A peak gate drivers.
R_θJC	6.1 °C/W - Allows direct thermal coupling to PCB copper or heatsink for junction temperature control below 150°C.
E_AS	37.5 mJ - Guarantees single-pulse avalanche energy handling for unclamped inductive switching in DC-DC controllers.
t_RR	26.7 ns - Minimizes body diode switching loss and voltage overshoot during hard commutation.

Pinout & Package

Package: PowerDI3333-8 (SWP), surface-mount, thermally enhanced with exposed drain pad and wettable flank terminals for solder joint inspection.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal accepting 0–10 V logic-level signals; requires <28.4 nC charge for full enhancement.
S	Source	Reference node for gate drive and current sensing; three parallel pins reduce source inductance.
D	Drain	High-current power output node; eight parallel pins connect to internal die drain metallization and exposed thermal pad.

Key Features

Feature	Design Value
100% UIS tested in production	Ensures every unit survives worst-case inductive turn-off stress without derating or screening.
Wettable flank terminals	Enables automated optical inspection (AOI) of solder fillets on all four side edges, improving manufacturing yield.
PowerDI3333-8 thermal design	6.1 °C/W R_θJC allows >20 W power dissipation when mounted on 1-inch² 2 oz copper, eliminating need for external heatsinks.
AEC-Q101 qualification	Validated for automotive underhood environments including temperature cycling, HTRB, and ESD per JESD47.

Applications

Automotive DC-DC Converters

LED Backlight Drivers

Use Scenario: High-efficiency 12 V to 5 V/3.3 V buck converter in infotainment head units and ADAS domain controllers.

IC Role / Device Role / Timing Role: Primary high-side synchronous rectifier switch operating at 300–500 kHz PWM frequency.

Use Value: 8.3 mΩ R_DS(ON) reduces conduction loss by 35% vs. comparable 12 V MOSFETs, enabling >95% efficiency at 20 A load.

Use Scenario: Constant-current LED string driver for instrument cluster and center display backlighting.

IC Role / Device Role / Timing Role: Low-side PWM dimming switch controlling LED current path with 100–1000 Hz modulation.

Use Value: 26.7 ns t_RR prevents tail current during rapid turn-off, eliminating visible flicker and color shift in high-brightness modes.

Automotive Power Management

Body Control Modules (BCM)

Use Scenario: Load switch for 12 V accessory rail protection and sequencing in gateway ECUs.

IC Role / Device Role / Timing Role: High-side power distribution switch with integrated overcurrent and thermal shutdown.

Use Value: 37.5 mJ E_AS withstands load dump transients up to ISO 7637-2 Pulse 5a, reducing need for external TVS clamping.

Use Scenario: Smart high-side switch for solenoid and relay control in door module and lighting subsystems.

IC Role / Device Role / Timing Role: Protected power switch with diagnostic feedback via current sense capability.

Use Value: Wettable flank terminals enable AOI verification of solder joints in high-mix BCM SMT lines, reducing field return rates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMTH6016LPSQ-13	60 V, 5.8 mΩ @ 10 V, PowerDI5060 package, higher R_θJA (50 °C/W)	Better conduction loss but larger footprint and lower thermal performance in constrained PCB areas	Select when lowest R_DS(ON) dominates and board space permits larger package
IPD70N04S4-05	40 V, 4.5 mΩ @ 10 V, TO-252 package, non-AEC-Q101 rated	Higher current density but unsuitable for 60 V automotive transients and PPAP-controlled production	Select only for non-automotive industrial DC-DC where voltage margin and qualification are not required

Compared with DMTH6016LPSQ-13 and IPD70N04S4-05, DMT69M5LFVWQ-7 uniquely balances 60 V rating, AEC-Q101 compliance, wettable flank inspection, and PowerDI3333-8 thermal efficiency-making it optimal for space-constrained, PPAP-driven automotive power stages requiring zero visual solder defects.

Availability

DMT69M5LFVWQ-7 is available at Aetrix Electronics and suitable for automotive DC-DC converters, LED backlight drivers, and body control modules requiring stable component supply across multi-year vehicle production cycles.

Supply support for DMT69M5LFVWQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

This part belongs to Diodes' AEC-Q101-qualified Power MOSFET product line, engineered specifically for automotive power conversion and load switching where thermal efficiency, transient robustness, and process traceability are mandatory.

FAQ

What is the maximum junction temperature and how is it validated?

The DMT69M5LFVWQ-7 has a rated junction temperature range of –55°C to +150°C, verified through HTOL (High-Temperature Operating Life) testing per AEC-Q101. Thermal characterization includes transient thermal resistance curves (Figure 13) and steady-state R_θJC = 6.1 °C/W measured on FR-4 with 2 oz copper per JEDEC 51-14.

Does this MOSFET support 3.3 V logic-level gate drive?

No-its gate threshold voltage (V_GS(TH)) ranges from 1.4 V to 2.5 V, but full enhancement requires ≥4.5 V. At V_GS = 3.3 V, R_DS(ON) rises above 20 mΩ, increasing conduction loss significantly. Use with 5 V or 10 V gate drivers for optimal performance.

How does the wettable flank feature improve manufacturing yield?

The wettable flank geometry exposes vertical sidewalls of all four package edges, allowing automated optical inspection (AOI) systems to verify solder fillet formation and voiding. This eliminates reliance on X-ray for hidden-joint validation and reduces escape of insufficient solder joints in high-volume automotive SMT lines.

Is the body diode suitable for synchronous rectification?

No-the integrated body diode has 26.7 ns t_RR and 44.8 nC Q_RR, making it unsuitable for high-frequency synchronous rectification where reverse recovery causes cross-conduction loss. It is designed for freewheeling and protection, not active rectification; external Schottky or dedicated synchronous FETs are recommended for that function.

DMT69M5LFVWQ-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 14.8A (Ta), 40.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.3mOhm @ 13.5A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 28.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1406 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.74W (Ta), 20.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerDI3333-8 (SWP) Type UX

DMT69M5LFVWQ-7 FAQ

1.How can I place an order for DMT69M5LFVWQ-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT69M5LFVWQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT69M5LFVWQ-7 reliable?

The price and inventory of DMT69M5LFVWQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT69M5LFVWQ-7 is usually 5 days.

3.What payment methods are accepted for DMT69M5LFVWQ-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT69M5LFVWQ-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT69M5LFVWQ-7?

DMT69M5LFVWQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT69M5LFVWQ-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT69M5LFVWQ-7?

For technical support, including DMT69M5LFVWQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT69M5LFVWQ-7 requirements.

6.How does Aetrix verify that DMT69M5LFVWQ-7 is sourced from the original manufacturer or authorized distributors?

All DMT69M5LFVWQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT69M5LFVWQ-7 meets industry standards.

7.What is the process for return or replacement of DMT69M5LFVWQ-7?

All DMT69M5LFVWQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT69M5LFVWQ-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT69M5LFVWQ-7 part is unused and in its original packaging.

Return procedure for DMT69M5LFVWQ-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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