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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT69M5LH3

Name: DMT69M5LH3
Brand: Diodes Incorporated
SKU: DMT69M5LH3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT69M5LH3

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-251-3 Stub Leads, IPAK

Datasheet:: DMT69M5LH3.pdf

Description:: MOSFET BVDSS: 41V~60V TO251 TUBE

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMT69M5LH3 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in TO251 (TH3) package, optimized for high-efficiency power switching with R_DS(ON) = 10.5 mΩ @ V_GS = 10V and 75A continuous drain current at T_C = +25°C. It delivers low gate charge (Q_g = 28.4 nC), fast switching (t_F = 79.5 ns), and robust UIS capability (E_AS = 37.5 mJ), making it suitable for motor control and LED backlighting circuits.

For engineers reviewing the DMT69M5LH3 datasheet, DMT69M5LH3 pinout, DMT69M5LH3 application, or DMT69M5LH3 equivalent, key selection considerations include its 1.3°C/W junction-to-case thermal resistance, 100% production-tested UIS performance, gate threshold voltage range (1.4–2.5V), and compatibility with 4.5V logic-level drive in space-constrained industrial power stages.

Technical Context

This MOSFET employs planar silicon process technology to balance low conduction loss and controlled switching behavior. Its R_DS(ON) remains stable across -55°C to +150°C junction temperature, and body diode exhibits t_RR = 26.7 ns with Q_RR = 44.8 nC under 300 A/μs di/dt conditions.

The device features low input capacitance (C_iss = 1406 pF) and reverse transfer capacitance (C_rss = 52 pF) at V_DS = 30V, enabling efficient operation in hard-switched DC-DC converters and half-bridge motor drivers where Miller-induced shoot-through must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche onset; supports 48V bus systems with margin.
R_DS(ON)	10.5 mΩ @ V_GS = 10V - Enables <1.5W conduction loss at 75A, critical for thermally constrained PCB layouts.
I_D (continuous)	75 A @ T_C = +25°C - Requires infinite heatsink mounting; derates to 60A at T_C = +70°C.
Q_g	28.4 nC @ V_GS = 10V - Determines gate driver current requirement (~2.8 mA avg. for 100 kHz switching).
E_AS	37.5 mJ - Specifies single-pulse avalanche energy handling without failure; validated per JEDEC JESD24-1.
R_θJC	1.3 °C/W - Enables direct thermal coupling to heatsink; allows ~74W power dissipation before reaching T_J = 150°C.
t_F	79.5 ns - Fast fall time reduces switching transition losses in PWM-driven loads like BLDC gate drivers.

Pinout & Package

Package: TO251 (Type TH3), surface-mount, thermally enhanced plastic case with exposed drain pad on bottom side. Molded compound meets UL 94V-0 flammability rating and RoHS 3 / "Green" compliance (Br+Cl <1500 ppm, Sb <1000 ppm).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Accepts 0–20V logic-level signals; threshold voltage 1.4–2.5V enables compatibility with 3.3V/5V microcontrollers.
D (Drain)	High-side power output	Internally connected to exposed metal pad; primary thermal path to PCB copper or heatsink.
S (Source)	Power return reference	Common node for gate drive return and current sensing; ties to ground or low-side shunt resistor.

Key Features

Feature	Design Value
100% UIS tested in production	Guarantees avalanche ruggedness without screening omissions-critical for inductive load commutation in motor drives.
Low C_rss / C_iss ratio	52/1406 pF = 3.7% - Reduces Miller effect, improving noise immunity and enabling higher dV/dt tolerance in half-bridge configurations.
Thermally efficient TO251	R_θJC = 1.3°C/W - Delivers 3× better thermal performance than comparable SO-8 MOSFETs, supporting higher power density.
Logic-level compatible V_GS(TH)	1.4–2.5V range - Ensures reliable turn-on with standard 3.3V GPIOs, eliminating need for gate boosters in compact designs.

Applications

Motor Control

LED Backlighting

Use Scenario: Driving brushed DC or BLDC motor phases in automotive HVAC actuators and industrial positioning systems.

IC Role / Device Role / Timing Role: Low-side or high-side switch in H-bridge topology, handling bidirectional current up to 62A at 4.5V gate drive.

Use Value: 15mΩ R_DS(ON) @ 4.5V minimizes I²R loss during PWM dimming cycles, extending battery life in portable tools.

Use Scenario: Constant-current regulation for edge-lit LCD panels in medical monitors and industrial HMIs.

IC Role / Device Role / Timing Role: High-side switch controlling current through LED strings; synchronized with PWM dimming controller.

Use Value: Fast t_F = 79.5 ns ensures precise current pulse shaping, reducing visible flicker and improving grayscale linearity.

DC-DC Converter

Power OR-ing

Use Scenario: Synchronous rectifier in 12V–48V isolated flyback or forward converters for telecom power supplies.

IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diode; driven by transformer-coupled or IC-based gate signal.

Use Value: 10.5mΩ R_DS(ON) cuts conduction loss by >50% vs. 40V Schottky, raising efficiency from 89% to 93% at full load.

Use Scenario: Redundant 24V power rail selection in programmable logic controllers and rail-mounted I/O modules.

IC Role / Device Role / Timing Role: Ideal diode replacement in active OR-ing circuit; body diode provides fail-safe conduction path.

Use Value: V_SD = 0.8–1.2V ensures low forward drop during fault transitions, limiting voltage imbalance to <200mV between inputs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT6004LPS	R_DS(ON) = 4.0 mΩ @ 10V but rated only for 40V V_DSS; larger SO-8 package with R_θJA = 62°C/W.	Better conduction loss at lower voltages; unsuitable for 48V bus transients exceeding 55V.	Select when operating below 40V with priority on R_DS(ON), not avalanche capability.
IPB070N06LG	60V, 7.0mΩ @ 10V, PG-HSOF-8 package; includes integrated ESD protection and tighter V_GS(TH) distribution (1.2–2.2V).	Higher cost; requires different footprint and gate driver layout due to dual-source pinout.	Prefer for automotive-grade designs requiring AEC-Q101 qualification and enhanced gate robustness.

Compared with DMT69M5LH3, DMT6004LPS offers lower on-resistance but sacrifices voltage margin and thermal performance, while IPB070N06LG adds automotive qualification and tighter parametric control at the expense of board area and sourcing complexity.

Availability

DMT69M5LH3 is available at Aetrix Electronics and suitable for motor control, LED backlighting, and DC-DC converter designs requiring stable component supply, consistent parametric performance across production lots, and long-term industrial lifecycle support.

Supply support for DMT69M5LH3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMT69M5LH3 belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-current, medium-voltage industrial and automotive power conversion where thermal efficiency, avalanche reliability, and logic-level drivability are essential.

FAQ

What is the maximum safe operating junction temperature for DMT69M5LH3?

The absolute maximum junction temperature is +150°C, verified per JEDEC JESD78. Operation above this limit risks permanent degradation of gate oxide integrity and increased R_DS(ON). Thermal design must ensure T_J ≤ 150°C under worst-case ambient and power dissipation conditions, using R_θJC = 1.3°C/W and appropriate heatsinking.

Can DMT69M5LH3 be used with 3.3V microcontroller GPIOs without a gate driver?

Yes-its V_GS(TH) range (1.4–2.5V) ensures turn-on with 3.3V logic, and R_DS(ON) = 15mΩ @ V_GS = 4.5V supports moderate current loads. However, for 75A continuous operation, gate drive strength and PCB layout must minimize inductance to achieve full enhancement and avoid thermal runaway.

Does DMT69M5LH3 have built-in ESD protection on the gate?

No-this MOSFET lacks integrated gate protection diodes. External Zener clamping (e.g., 12V TVS between G and S) is recommended in environments with >2kV HBM risk. The gate oxide withstands ±20V V_GS, but transient overvoltage beyond that causes irreversible damage.

How does the TO251 (TH3) package compare thermally to TO220AB for this device?

TO251 offers lower R_θJC (1.3°C/W vs. ~1.0°C/W for TO220AB with identical heatsink), but its smaller footprint limits total heat spread. In practice, TO251 achieves comparable steady-state T_J at <50W dissipation, while TO220AB supports >100W with proper mounting-making TO251 optimal for space-constrained, medium-power applications.

DMT69M5LH3 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-251-3 Stub Leads, IPAK

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 10.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 28.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1406 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 3.3W (Ta), 96W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251

DMT69M5LH3 FAQ

1.How can I place an order for DMT69M5LH3 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT69M5LH3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT69M5LH3 reliable?

The price and inventory of DMT69M5LH3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT69M5LH3 is usually 5 days.

3.What payment methods are accepted for DMT69M5LH3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT69M5LH3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT69M5LH3?

DMT69M5LH3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT69M5LH3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT69M5LH3?

For technical support, including DMT69M5LH3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT69M5LH3 requirements.

6.How does Aetrix verify that DMT69M5LH3 is sourced from the original manufacturer or authorized distributors?

All DMT69M5LH3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT69M5LH3 meets industry standards.

7.What is the process for return or replacement of DMT69M5LH3?

All DMT69M5LH3 units undergo pre-shipment inspection (PSI). If there is an issue with DMT69M5LH3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT69M5LH3 part is unused and in its original packaging.

Return procedure for DMT69M5LH3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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