Diodes Incorporated DMT69M8LFV-13

Overview

DMT69M8LFV-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in PowerDI3333-8 (Type UX) package, optimized for high-efficiency power management. It delivers 45A continuous drain current at TC = +25°C, 9.5mΩ R_DS(ON) @ V_GS = 10V, and 13.3mΩ @ 4.5V - enabling robust synchronous rectification in DC-DC converters.

For engineers reviewing the DMT69M8LFV-13 datasheet, DMT69M8LFV-13 pinout, DMT69M8LFV-13 application, or DMT69M8LFV-13 equivalent, key selection criteria include low gate charge (33.5nC @ 10V), 100% UIS-rated ruggedness, thermal resistance of 3°C/W (junction-to-case), and compatibility with 4.5V logic-level drive in compact board space-constrained designs.

Technical Context

This MOSFET employs a trench-gate silicon process to simultaneously reduce R_DS(ON) and gate charge while maintaining fast switching transitions. Its 1925pF input capacitance (C_iss) and 41pF reverse transfer capacitance (C_rss) support efficient hard-switching operation up to several hundred kHz.

The device integrates a low-V_SD body diode (1.2V @ 13.5A) with 18.2ns reverse recovery time and 33.1nC Q_RR, making it suitable for synchronous rectifier topologies where diode conduction and recovery losses must be minimized.

Key Specifications

Pinout & Package

Package: PowerDI3333-8 (Type UX), surface-mount, thermally enhanced plastic case with exposed drain pad; UL 94V-0 rated, lead-free, halogen-free, 0.072g mass.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMT6006LPS-13, DMT69M8LFV-13 trades 3.7mΩ higher R_DS(ON) for 30% smaller footprint and 30% lower gate charge - optimizing for board area and driver simplicity. Against DMTH6016LPS-13, it delivers 3.2A higher current rating and 3.8mΩ lower on-resistance at 4.5V, favoring high-density power delivery where thermal design permits.

Availability

DMT69M8LFV-13 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC modules, and automotive ADAS camera power systems requiring stable component supply, long-lifecycle support, and RoHS-compliant sourcing.

Supply support for DMT69M8LFV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.

The PowerDI3333-8 MOSFET product line targets space-constrained, high-efficiency power conversion - delivering low R_DS(ON), fast switching, and rugged UIS performance in thermally enhanced small-outline packages.

FAQ

What is the maximum safe operating temperature for DMT69M8LFV-13?

The device has a specified junction temperature range of –55°C to +150°C. For reliable long-term operation, junction temperature should be kept ≤125°C under continuous load. With R_θJC = 3°C/W, a 40°C temperature rise above case requires ≤13.3W power dissipation - achievable using ≥25mm² 2oz copper thermal pad with via stitching.

Can DMT69M8LFV-13 be used in linear mode (as a pass transistor)?

No - this MOSFET is not characterized or rated for linear (ohmic) operation. Its Safe Operating Area (SOA) curve shows only single-pulse capability down to DC, with R_DS(ON)-limited region ending at ~1A at V_DS = 10V. Linear use risks thermal runaway due to positive temperature coefficient of R_DS(ON) and lack of SOA derating data.

Is the PowerDI3333-8 (Type UX) package compatible with standard reflow profiles?

Yes - the package is qualified for lead-free reflow per J-STD-020, with Moisture Sensitivity Level 1. Recommended peak temperature is 260°C for ≤30 seconds. The matte tin finish on copper leadframe ensures solderability; no pre-bake is required for MSL-1 devices stored in dry cabinet ≤12 months.

Does DMT69M8LFV-13 require a gate resistor for stability?

A gate resistor (typically 2–10Ω) is recommended to dampen ringing caused by gate loop inductance and C_iss/C_rss interaction. Without it, 1.7Ω intrinsic gate resistance may allow oscillation during fast edge transitions - especially with >10cm gate trace length or low-impedance drivers. Layout optimization remains critical regardless of resistor value.