Diodes Incorporated DMT69M8LFV-7

Overview

DMT69M8LFV-7 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in PowerDI3333-8 (Type UX) package, rated for 45A continuous drain current at TC = +25°C, with RDS(ON) of 9.5mΩ @ VGS = 10V and 13.3mΩ @ VGS = 4.5V. It features low input capacitance (Ciss = 1925pF), fast switching (tD(ON) = 4.5ns), and 100% unclamped inductive switching capability - optimized for synchronous rectification in high-efficiency DC-DC converters.

For engineers reviewing the DMT69M8LFV-7 datasheet, DMT69M8LFV-7 pinout, DMT69M8LFV-7 application, or DMT69M8LFV-7 equivalent, key selection criteria include its 60V BVDSS rating, thermally robust RθJC = 3°C/W, 45A ID max at TC = +25°C, 100% UIS-rated ruggedness, and compatibility with 4.5V logic-level gate drive in compact power stages.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low RDS(ON) while maintaining controlled Qg (33.5nC @ VGS = 10V) and Crss (41pF), enabling high-frequency operation in buck converters and OR-ing circuits. Its body diode exhibits tRR = 18.2ns and QRR = 33.1nC, supporting efficient reverse recovery in synchronous rectifier topologies.

The device operates across –55°C to +150°C junction temperature range and is characterized for stable VGS(TH) (1–3V) and normalized RDS(ON) variation ≤1.6× over temperature. Thermal design leverages low RθJC = 3°C/W and FR-4 PCB-compatible power dissipation (PD = 42W at TC = +25°C).

Key Specifications

Pinout & Package

Package: PowerDI3333-8 (Type UX), surface-mount, 8-terminal leadless package with exposed drain paddle for thermal and electrical performance. Dimensions: 3.30 × 3.30 × 0.80 mm (L × W × H), moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with DMT69M8LFV-7, DMT6006LPS-13 offers lower on-resistance but sacrifices switching speed and board density, while DMN6075SFG-7 trades current capacity and thermal performance for ultra-compact size - making DMT69M8LFV-7 the optimal balance for 30–45A synchronous rectification in space-constrained 48V systems.

Availability

DMT69M8LFV-7 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC modules, and telecom PoE++ power supplies requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for DMT69M8LFV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.

The DMT69M8LFV-7 belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-current power conversion in computing, industrial, and communications infrastructure - emphasizing ruggedness, thermal performance, and logic-level drivability.

FAQ

What is the maximum recommended gate-source voltage for DMT69M8LFV-7?

The absolute maximum gate-source voltage (VGSS) is ±16V per datasheet DS39220 Rev. 3-2. Operation beyond ±12V is not recommended for long-term reliability; typical gate drive uses 10V for full enhancement or 4.5V for logic-level compatibility. Exceeding ±16V risks irreversible oxide damage even in short pulses.

Can DMT69M8LFV-7 be used in parallel configurations?

Yes - its positive temperature coefficient of RDS(ON) (normalized increase ≤1.6× from –55°C to +150°C) enables inherent current sharing. Successful parallel operation requires matched layout symmetry, identical gate drive impedance, and shared source inductance minimization; derating total current by 15% is advised for thermal margin.

Is DMT69M8LFV-7 suitable for automotive applications?

While not AEC-Q101 qualified, DMT69M8LFV-7 meets key automotive-environment requirements: operating TJ range of –55°C to +150°C, halogen/antimony-free "Green" construction, and robust UIS rating. It has been deployed in non-safety-critical ADAS power supplies, but formal qualification is required for ASIL-B/C systems.

What is the thermal resistance from junction to board (RθJB) for DMT69M8LFV-7?

RθJB is not specified in the datasheet. The published thermal metrics are RθJA = 57°C/W (on FR-4, 2oz Cu, 1-inch² bottom-layer copper) and RθJC = 3°C/W. For board-level thermal modeling, use measured or simulated RθJB values based on actual PCB stack-up; typical reference value for PowerDI3333-8 on 2oz Cu is ~25°C/W.