Diodes Incorporated DMT69M8LPS-13

Overview

DMT69M8LPS-13 from Diodes Incorporated is a 60V N-channel enhancement-mode Power MOSFET in PowerDI5060-8 package, featuring 12 mΩ R_DS(ON) @ V_GS = 10 V, 70 A continuous drain current at T_C = +25°C, and 100% unclamped inductive switching (UIS) rating of 20.3 A. It is engineered for high-efficiency DC-DC converters and synchronous rectification in automotive and industrial power supplies.

For engineers reviewing the DMT69M8LPS-13 datasheet, DMT69M8LPS-13 pinout, DMT69M8LPS-13 application, or DMT69M8LPS-13 equivalent, key selection criteria include its low Q_G (33.5 nC @ 10 V), thermally optimized exposed-drain thermal path (R_θJC = 1.1°C/W), and AEC-Q101 qualification for reliability-critical power stages.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve low R_DS(ON) while maintaining fast switching dynamics-evidenced by t_D(ON) = 4.5 ns and t_F = 15.7 ns under standard test conditions. Its body diode exhibits t_RR = 18.2 ns and Q_RR = 33.1 nC, supporting efficient synchronous rectification with minimal reverse recovery loss.

The device operates across –55°C to +150°C junction temperature range and is rated for ±16 V gate-source voltage. Its PowerDI5060-8 package integrates an exposed drain pad for direct thermal coupling to PCB copper, enabling 113 W power dissipation at T_C = +25°C with R_θJC = 1.1°C/W.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 - surface-mount, thermally enhanced 8-pin package with exposed drain pad on bottom side for low-impedance thermal path to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMT6012LPS-13, DMT69M8LPS-13 offers 11% lower R_DS(ON) and 17% higher current rating in identical packaging; versus IPB017N10N5ATMA1, it trades raw performance for AEC-Q101 compliance and surface-mount manufacturability in space-constrained automotive modules.

Availability

DMT69M8LPS-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and telecom power supplies requiring stable component supply, long-lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for DMT69M8LPS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.

The Power MOSFET product line-including the DMT69M8LPS-was developed specifically for high-frequency, high-current switching in space-constrained power conversion systems where thermal performance and ruggedness are critical.

FAQ

What is the maximum safe operating junction temperature for DMT69M8LPS-13?

The absolute maximum junction temperature is +150°C, and the device is characterized over –55°C to +150°C. Derating begins at T_J > 125°C per Figure 5 and Figure 6, where R_DS(ON) increases ~1.8× from 25°C to 150°C at V_GS = 10 V. Thermal design must ensure T_J remains ≤150°C under worst-case ambient and power dissipation conditions.

Does DMT69M8LPS-13 support 4.5 V gate drive in synchronous rectifier applications?

Yes-it is fully specified at V_GS = 4.5 V, delivering R_DS(ON) = 14 mΩ max and I_D = 55 A continuous at T_C = +25°C. Its V_GS(TH) range of 0.7–2.0 V ensures reliable turn-on with standard 4.5 V logic drivers, and its low Q_G (15.6 nC @ 4.5 V) minimizes switching loss in high-frequency rectification.

How is the PowerDI5060-8 package thermally mounted on PCB?

The exposed drain pad (Pins 1–7 and bottom metal area) must be soldered directly to a large copper pour or thermal pad on the PCB's inner or outer layer. Recommended layout uses ≥4 thermal vias (0.3 mm diameter, spaced ≤1.2 mm apart) connecting the pad to internal ground planes. Pad dimensions follow Diodes' suggested layout: X3 = 4.42 mm, Y5 = 3.81 mm, and G1 = 0.82 mm.

Is DMT69M8LPS-13 recommended for new designs?

No-the datasheet explicitly states "NOT RECOMMENDED FOR NEW DESIGN USE" and references DMT6012LPS as the preferred replacement. However, DMT69M8LPS-13 remains actively manufactured and supported for legacy program continuity, with full AEC-Q101 qualification and documented lifetime availability through Diodes Incorporated's product change notification process.