Diodes Incorporated DMT69M8LSS-13

Overview

DMT69M8LSS from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in SO-8 package, rated for 9.8A continuous drain current at V_GS = 10V, with R_DS(ON) = 12mΩ (max), optimized for high-efficiency DC-DC converters and LED backlighting power stages.

For engineers reviewing the DMT69M8LSS datasheet, DMT69M8LSS pinout, DMT69M8LSS application, or DMT69M8LSS equivalent, key selection criteria include its low R_DS(ON) at 4.5V gate drive (14mΩ), 100% production-tested UIS capability, SO-8 thermal performance (R_θJA = 75°C/W with 1-inch² copper), and body diode recovery charge (Q_RR = 33.1nC) for synchronous rectification design validation.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low Q_GD × R_DS(ON) figure-of-merit (FOM), enabling fast switching with minimal conduction loss in buck converter high-side or synchronous rectifier roles. Its V_GS(TH) range (0.7–2.0V) supports logic-level gate drive compatibility.

Rated for operation from –55°C to +150°C junction temperature, it delivers stable R_DS(ON) over temperature (±15% variation at 125°C vs. 25°C) and features a robust 31.5mJ single-pulse avalanche energy rating (E_AS) with 25A I_AS at L = 0.1mH.

Key Specifications

Pinout & Package

Package: SO-8 surface-mount, molded plastic case with exposed drain pad (pins 1–4 = source, pins 5–8 = drain, pin 3 = gate), UL 94V-0 rated, matte tin annealed terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with DMT69M8LSS, DMT6012LSS offers marginally better conduction loss but carries obsolescence risk, while DMN6016LSS provides superior current rating and FOM at the cost of higher gate charge-making it optimal for next-generation 12A+ power stages.

Availability

DMT69M8LSS is available at Aetrix Electronics and suitable for DC-DC converters, LED backlighting systems, and hot-swap controllers requiring stable component supply and RoHS-compliant packaging.

Supply support for DMT69M8LSS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal ICs, with emphasis on power management, signal integrity, and protection devices.

This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-frequency, high-efficiency switching in space-constrained power conversion systems.

FAQ

Is DMT69M8LSS suitable for 3.3V gate drive applications?

Yes. With a gate threshold voltage (V_GS(TH)) ranging from 0.7V to 2.0V and R_DS(ON) = 14mΩ max at V_GS = 4.5V, it fully turns on using standard 3.3V logic-level controllers. However, full enhancement and lowest R_DS(ON) require ≥4.5V drive; verify gate driver slew rate and peak current capability to ensure t_R/t_F meet system timing targets.

What is the maximum safe operating area (SOA) limitation at 100°C case temperature?

At T_C = 100°C, the SOA curve (Figure 12) shows the device is limited by R_DS(ON) conduction at DC and by thermal constraints above 10ms pulse width. For continuous operation, derate ID to ≤5.5A at 100°C case to maintain T_J ≤ 150°C with R_θJC = 12°C/W and typical PCB copper area.

Does DMT69M8LSS have an integrated body diode, and what are its recovery characteristics?

Yes, it features a monolithic body diode with V_SD = 0.9–1.2V at 20A and reverse recovery time t_RR = 18.2ns (IF = 13.5A, di/dt = 400A/μs). Q_RR = 33.1nC confirms fast, soft recovery suitable for synchronous rectification-critical for minimizing voltage spikes and EMI in high-frequency converters.

How does the SO-8 package's thermal performance compare between JEDEC-standard and Diodes' recommended layout?

With Diodes' recommended 1-inch² copper pad (Note 6), R_θJA improves from 100°C/W (JEDEC 2oz FR-4) to 75°C/W, increasing allowable continuous power from 1.25W to 1.6W. The exposed drain pad must be soldered to ≥2cm² internal/external copper for effective heat transfer-failure to do so risks exceeding T_J(max) at >1W dissipation.