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Diodes Incorporated DMT69M9LPDW-13
- Part No.:
- DMT69M9LPDW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMT69M9LPDW-13.pdf
- Description:
- MOSFET 2N-CH 60V 11A PWRDI50
- Quantity:
- Payment:
- Shipping:
Inventory:5,759
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Product details
Overview
DMT69M9LPDW-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in PowerDI5060-8/SWP package, rated for 60V VDSS, 12.5mΩ RDS(ON) @ 10V VGS, and 44A continuous drain current at TC = +25°C. It delivers low conduction loss and fast switching for high-efficiency DC-DC converters and wireless charging power stages.
For engineers reviewing the DMT69M9LPDW-13 datasheet, DMT69M9LPDW-13 pinout, DMT69M9LPDW-13 application, or DMT69M9LPDW-13 equivalent, key selection criteria include dual-channel thermal coupling, wettable flank terminals for automated optical inspection, 100% production-tested UIS robustness, and RDS(ON) performance at 4.5V gate drive for 3.3V/5V control logic compatibility.
Technical Context
This dual MOSFET integrates two matched N-channel silicon devices in a thermally optimized PowerDI5060-8/SWP package with exposed drain pads on both channels. Its design supports synchronous rectification and half-bridge topologies where channel-to-channel thermal tracking and low gate charge (Qg = 33.5nC @ 10V) reduce switching losses.
The device features a gate threshold voltage range of 0.7–2.0V, enabling reliable turn-on with standard logic-level drivers, and includes integrated body diodes with low forward voltage (VSD = 0.9–1.2V @ 20A) and fast reverse recovery (tRR = 18.2ns), critical for high-frequency buck and boost converter operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60V - Supports input rails up to 48V nominal systems with margin for transient spikes. |
| RDS(ON) @ 10V | 12.5mΩ - Enables ≤0.5W conduction loss per channel at 20A, reducing heatsink requirements. |
| RDS(ON) @ 4.5V | 16.8mΩ - Ensures usable on-resistance with 3.3V/5V microcontroller GPIO or PWM controller outputs. |
| Qg @ 10V | 33.5nC - Low gate charge minimizes driver power and enables >1MHz switching without excessive gate drive loss. |
| tRR | 18.2ns - Fast body diode recovery reduces shoot-through risk and EMI in synchronous rectifiers. |
| EAS | 45mJ - Rated avalanche energy allows safe operation under inductive load switching stress without external snubbers. |
| RθJC | 3.1°C/W - Low junction-to-case thermal resistance enables direct PCB copper pad cooling for high-power density layouts. |
Pinout & Package
Package: PowerDI5060-8/SWP (Type UXD), surface-mount, thermally enhanced with dual exposed drain pads and wettable flank terminals for solder joint inspection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source of Channel 1 | Low-side return path for first MOSFET; electrically isolated from S2 but thermally coupled via shared substrate. |
| D1 | Drain of Channel 1 | Exposed copper pad - primary heat dissipation path and high-current output node for Channel 1. |
| G1 | Gate of Channel 1 | High-impedance control terminal; requires <2V threshold margin for reliable turn-on with 3.3V logic. |
| S2 | Source of Channel 2 | Independent source node for second MOSFET; enables independent current sensing or floating configuration. |
| D2 | Drain of Channel 2 | Second exposed copper pad - supports dual-channel thermal management and parallel layout symmetry. |
| G2 | Gate of Channel 2 | Separate gate input allowing asynchronous or complementary drive; no internal gate coupling. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested in production | Guarantees minimum 30A avalanche current and 45mJ single-pulse energy handling across all units - eliminates field failure from inductive switching stress. |
| Wettable flank terminals | Vertical sidewall plating enables automated optical inspection (AOI) of solder fillets - improves manufacturing yield in high-volume power module assembly. |
| Thermally efficient PowerDI5060-8 | 3.1°C/W RθJC and dual exposed drain pads allow >40W power dissipation at TC = +25°C - supports compact, fanless DC-DC designs. |
| Low Qgd/Qgs ratio | Qgd = 5.3nC, Qgs = 4.7nC - reduces Miller effect and improves hard-switching stability in high-dV/dt environments. |
| Halogen- and antimony-free "Green" construction | <900ppm Br, <900ppm Cl, <1000ppm Sb - meets IPC-1752A Class 3 reporting and automotive material compliance requirements. |
Applications
| Wireless Charging Transmitter | High-Density DC-DC Converter |
|---|---|
|
Use Scenario: Half-bridge inverter driving resonant LC tank at 100–300kHz for Qi-compliant 15W+ transmitters. IC Role / Device Role / Timing Role: Dual N-channel switch implementing synchronous high- and low-side switching with precise dead-time control. Use Value: 12.5mΩ RDS(ON) and 18.2ns tRR minimize conduction and recovery losses, enabling >92% system efficiency at full load. |
Use Scenario: 12V–48V input, 3.3V/5V output buck converter in telecom power shelf or server VRM. IC Role / Device Role / Timing Role: High-side and low-side FETs in synchronous rectification stage operating at 500kHz–1MHz. Use Value: Matched dual-channel RDS(ON) and thermal coupling ensure balanced current sharing and prevent thermal runaway during transient load steps. |
| USB PD Programmable Power Supply | Industrial Motor Driver Half-Bridge |
|
Use Scenario: Adjustable 5–20V output stage supporting USB PD 3.0 PPS profiles with dynamic voltage scaling. IC Role / Device Role / Timing Role: Dual-channel power switch enabling bidirectional buck-boost topology with minimal external components. Use Value: 4.5V-rated RDS(ON) ensures stable regulation down to 3.3V gate drive from PD controller, eliminating level-shifter complexity. |
Use Scenario: 24V/48V BLDC motor gate driver stage controlling 1–3A phase currents in HVAC blowers or pump controllers. IC Role / Device Role / Timing Role: Compact half-bridge for commutation switching with integrated body diode recovery support. Use Value: 100% UIS rating and -55°C to +150°C operating range ensure reliability in unheated enclosures with wide ambient temperature swings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH6016LSDQ-13 | 60V, 16.5mΩ @ 10V, PowerDI3333 (smaller footprint, lower ID = 22A) | Lower power density; suitable only for ≤15W converters or space-constrained IoT nodes. | Select when board area is prioritized over thermal headroom and peak current capability. |
| DMN6016LSDQ-13 | 60V, 16.5mΩ @ 10V, same PowerDI3333 package, but single-channel (not dual) | Requires two discrete devices to replicate dual functionality - increases layout area and gate drive complexity. | Choose only if channel isolation or independent thermal management is required beyond dual-package integration. |
Compared with DMTH6016LSDQ-13 and DMN6016LSDQ-13, DMT69M9LPDW-13 provides 30% lower RDS(ON), 2× higher continuous current per channel, and integrated dual-channel thermal coupling - making it optimal for high-efficiency, high-power-density 48V-input power stages where layout simplicity and thermal performance are critical.
Availability
DMT69M9LPDW-13 is available at Aetrix Electronics and suitable for wireless charging transmitters, high-density DC-DC converters, and USB PD programmable power supplies requiring stable component supply and long-term industrial lifecycle support.
Supply support for DMT69M9LPDW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.
This device belongs to Diodes' PowerMOS™ dual-channel portfolio, engineered specifically for high-efficiency, high-frequency switching applications where thermal coupling, low gate charge, and production-tested ruggedness are mandatory design requirements.
FAQ
What is the maximum recommended gate-source voltage for DMT69M9LPDW-13?
The absolute maximum VGS is ±16V per the datasheet. For reliable long-term operation, gate drive should be limited to +12V maximum to avoid accelerated oxide degradation. Gate drive circuits must include clamping or Zener protection to prevent overshoot beyond this limit during fast switching transitions.
Can DMT69M9LPDW-13 be used in a synchronous buck converter with 3.3V PWM controller output?
Yes - its gate threshold voltage (0.7–2.0V) and RDS(ON) of 16.8mΩ at 4.5V VGS ensure full enhancement with 3.3V logic. However, gate drive strength must deliver ≥1A peak current to achieve specified tR/tF; weak drivers will increase switching losses disproportionately.
Does DMT69M9LPDW-13 have separate source connections for each channel?
Yes - Pin 1 (S1) and Pin 4 (S2) are electrically isolated source terminals. This enables independent current sensing, floating configurations, or asymmetric topologies such as active clamp forward converters where source referencing differs between channels.
Is the PowerDI5060-8/SWP package compatible with standard reflow profiles for lead-free soldering?
Yes - the device is fully RoHS-compliant and qualified for JEDEC J-STD-020 Level 1 moisture sensitivity. It supports standard Pb-free reflow profiles (peak 260°C, 60s max above 217°C) without popcorn or delamination when stored and handled per MSL-1 guidelines.
DMT69M9LPDW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Ta), 44A (Tc)
- Rds On (Max) @ Id, Vgs:
- 12.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2212pF @ 30V
- Power - Max:
- 2.5W (Ta), 40.3W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8 (Type UXD)
DMT69M9LPDW-13 FAQ
1.How can I place an order for DMT69M9LPDW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT69M9LPDW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT69M9LPDW-13 reliable?
The price and inventory of DMT69M9LPDW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT69M9LPDW-13 is usually 5 days.
3.What payment methods are accepted for DMT69M9LPDW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT69M9LPDW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT69M9LPDW-13?
DMT69M9LPDW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT69M9LPDW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT69M9LPDW-13?
For technical support, including DMT69M9LPDW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT69M9LPDW-13 requirements.
6.How does Aetrix verify that DMT69M9LPDW-13 is sourced from the original manufacturer or authorized distributors?
All DMT69M9LPDW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT69M9LPDW-13 meets industry standards.
7.What is the process for return or replacement of DMT69M9LPDW-13?
All DMT69M9LPDW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT69M9LPDW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT69M9LPDW-13 part is unused and in its original packaging.
Return procedure for DMT69M9LPDW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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