Diodes Incorporated DMT8008LFG-13

Overview

DMT8008LFG-13 from Diodes Incorporated is an 80V N-channel enhancement-mode MOSFET in PowerDI®3333-8 package, delivering 6.9mΩ R_DS(ON) @ V_GS = 10V, 48A continuous drain current at T_C = +25°C, and 100% production-tested UIS robustness-designed for high-efficiency DC-DC converters in backlighting and power management systems.

For engineers reviewing the DMT8008LFG-13 datasheet, DMT8008LFG-13 pinout, DMT8008LFG-13 application, or DMT8008LFG-13 equivalent, key selection criteria include R_DS(ON) at 4.5V/10V, thermal resistance (R_θJC = 5.3°C/W), Q_gd × R_DS(ON) figure-of-merit, and PowerDI3333-8 board-area efficiency versus SO-8.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in synchronous buck topologies. Its gate threshold voltage (1.2–2.5V) enables compatibility with 3.3V and 5V gate drivers, while its 7.8nC Q_gd supports high-frequency operation up to 1MHz in point-of-load converters.

The device integrates a robust body diode with t_RR = 42ns and Q_RR = 53nC, enabling efficient reverse recovery in hard-switched applications. Thermal design leverages the exposed drain pad in PowerDI3333-8 to achieve R_θJC = 5.3°C/W and 23.5W power dissipation at T_C = +25°C.

Key Specifications

Pinout & Package

Package: PowerDI®3333-8 - thermally enhanced 3.3mm × 3.3mm surface-mount package with exposed drain pad for low-junction-to-case thermal resistance (5.3°C/W). Occupies only 33% of the board area of standard SO-8.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMTH8008LPS-13, DMT8008LFG-13 trades 1.8°C/W higher R_θJC for 64% smaller board area; versus IPB80N06S4-02, it offers 4.5V drive compatibility and 80V rating at the cost of 3.4mΩ higher R_DS(ON), making it optimal for space-constrained 48V industrial supplies.

Availability

DMT8008LFG-13 is available at Aetrix Electronics and suitable for LED backlighting, DC-DC power conversion, and USB-C power path management requiring stable component supply across automotive, industrial, and consumer design cycles.

Supply support for DMT8008LFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

The PowerDI®3333-8 MOSFET product line targets high-density power conversion where board space and thermal performance are co-constrained-specifically engineered for next-generation DC-DC modules, LED drivers, and USB-PD solutions.

FAQ

What is the maximum safe operating temperature for DMT8008LFG-13?

The device has a rated junction temperature range of –55°C to +150°C. Under continuous operation at T_C = +25°C, it supports 23.5W power dissipation. With proper PCB copper thermal vias under the exposed drain pad, sustained operation at T_J = 135°C is achievable in 12V→3.3V buck converters with 20A load current.

Does DMT8008LFG-13 require a gate resistor for stability?

No external gate resistor is required for basic stability-the internal gate resistance is 1.98Ω, and the device's 7.8nC Q_gd and 2254pF C_iss are balanced for clean 10V switching with standard gate drivers. However, a 2.2Ω series resistor is recommended when driving from weak sources (e.g., MCU GPIO) to limit peak current and suppress ringing.

Can DMT8008LFG-13 be used in linear regulation mode?

It is not recommended for sustained linear operation. The Safe Operating Area (SOA) curve shows DC limitation at V_DS < 2V above 10A, and R_DS(ON) increases with temperature-leading to thermal runaway above 5W dissipation without active cooling. Use only in switching mode with duty cycle < 95%.

How does the PowerDI3333-8 package compare to SO-8 for thermal performance?

PowerDI3333-8 achieves R_θJC = 5.3°C/W versus ~6.5°C/W for SO-8 due to direct copper contact via the exposed drain pad. Its R_θJA is 49°C/W on 2oz FR-4 with thermal bias-32% lower than SO-8-enabling 2.5× higher power density in space-limited applications like handheld medical devices.