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Diodes Incorporated DMT8008LFG-7
- Part No.:
- DMT8008LFG-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT8008LFG-7.pdf
- Description:
- MOSFET N-CH 80V 16A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:980
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Product details
Overview
DMT8008LFG-7 from Diodes Incorporated is an 80V N-channel enhancement-mode MOSFET in PowerDI®3333-8 package, delivering 6.9 mΩ RDS(ON) @ VGS = 10 V and 48 A continuous drain current at TC = +25°C. It serves as a high-efficiency synchronous rectifier or main switch in DC-DC converters for industrial power supplies and LED backlighting systems.
For engineers reviewing the DMT8008LFG-7 datasheet, DMT8008LFG-7 pinout, DMT8008LFG-7 application, or DMT8008LFG-7 equivalent, key selection criteria include its low Qgd × RDS(ON) figure-of-merit (FOM), 100% production-tested UIS robustness, thermally optimized PowerDI3333-8 footprint, and verified performance at VGS = 4.5 V for 3.3 V/5 V gate drive compatibility.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance while maintaining fast switching speed and low gate charge (Qg = 37.7 nC @ VGS = 10 V). Its body diode exhibits tRR = 42 ns and QRR = 53 nC under 14 A, 100 A/μs conditions - critical for synchronous buck converter efficiency and EMI control.
The device is characterized for operation across –55°C to +150°C junction temperature range, with RDS(ON) normalized to 2.4× at TJ = 150°C (VGS = 10 V), and features a 5.3 °C/W RθJC enabling direct thermal coupling to PCB copper planes via its exposed drain pad.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 80 V - Withstands up to 80 V drain-source blocking voltage, suitable for 48 V input bus and 60 V transient clamping in industrial DC-DC stages. |
| RDS(ON) | 6.9 mΩ @ VGS = 10 V - Enables <1.5 W conduction loss at 48 A, reducing thermal load in high-current POL converters. |
| ID (continuous) | 48 A @ TC = +25°C - Supports high-current output rails when mounted on thermally enhanced PCB with ≥1 in² 2 oz copper. |
| Qgd | 7.8 nC - Low gate-drain charge minimizes Miller-induced switching delay and improves hard-switching efficiency above 500 kHz. |
| EAS | 162 mJ - Confirmed avalanche energy rating ensures reliable operation during inductive turn-off transients without derating. |
| tRR | 42 ns - Fast body diode recovery reduces cross-conduction losses and voltage overshoot in synchronous rectification. |
Pinout & Package
Package: PowerDI®3333-8 - thermally enhanced surface-mount package with exposed drain pad, 3.3 mm × 3.3 mm footprint, 0.8 mm height, and UL 94V-0 molding compound. Occupies only 33% board area of SO-8.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-frequency switching. |
| 5, 6, 7, 8 | Drain (D) | Four parallel drain terminals connected to exposed thermal pad - primary heat path to PCB copper plane. |
| 3 (center top) | Gate (G) | Single gate terminal located between source pins - optimized layout minimizes gate loop inductance for stable high-speed switching. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) × Qgd FOM | 51.3 mΩ·nC - Directly correlates to reduced switching + conduction loss trade-off in high-frequency DC-DC designs. |
| 100% UIS tested | 18 A avalanche current, 162 mJ energy - eliminates need for external snubbers in inductive load switching applications. |
| Thermal resistance RθJC | 5.3 °C/W - Enables >20 W power dissipation with minimal ΔT from junction to PCB copper, supporting compact thermal design. |
| Lead-free & Green | <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - compliant with RoHS 3 and halogen-free requirements for automotive and industrial end equipment. |
Applications
| LED Backlighting | Industrial DC-DC Converters |
|---|---|
|
Use Scenario: High-brightness LCD panel backlight driver using boost or SEPIC topology with PWM dimming. IC Role / Device Role: Main switching FET handling up to 38 A pulsed current at 100–500 kHz switching frequency. Use Value: Low RDS(ON) @ 4.5 V enables direct microcontroller GPIO drive, eliminating level-shifter ICs and reducing BOM count. |
Use Scenario: 48 V-to-12 V isolated or non-isolated buck converter in programmable logic controller (PLC) power modules. IC Role / Device Role: Primary-side high-side switch operating continuously at 40 A, 200 kHz with forced-air cooling. Use Value: 5.3 °C/W RθJC allows full 48 A rating with <30°C junction rise over ambient, avoiding thermal throttling in enclosed enclosures. |
| USB-C PD Power Delivery | Motor Drive Half-Bridge |
|
Use Scenario: 20 V/5 A USB-C PD sink-side buck converter with dynamic voltage scaling and tight thermal constraints. IC Role / Device Role: Synchronous rectifier FET in secondary-side synchronous rectification stage. Use Value: 42 ns body diode tRR and low QRR minimize reverse recovery loss and enable zero-voltage switching (ZVS) assist. |
Use Scenario: 24 V brushed DC motor H-bridge driver in automated factory actuators requiring bidirectional torque and regenerative braking. IC Role / Device Role: Low-side switch in half-bridge configuration, conducting 30 A continuous with 100% duty cycle capability. Use Value: 100% UIS qualification ensures survival during motor stall events and inductive kickback without external TVS clamping. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT8008LK3-13 | Same die, identical RDS(ON), Qg, and thermal specs; packaged in PowerDI5060-8 with larger 5.0 mm × 6.0 mm footprint and higher PD rating (35 W). | Suitable where board space permits larger package and higher thermal margin is required (e.g., fanless industrial enclosures). | Select when thermal budget exceeds 23.5 W and PCB layout allows 5×6 mm footprint; not drop-in compatible due to different pad layout and pinout. |
| DMTH8008LPS-13 | Same RDS(ON) and voltage rating but in PowerSO-8 package with 1.25 mm height and 0.95 °C/W RθJC; requires solder paste stencil optimization for exposed pad. | Better suited for ultra-low-profile applications (<1.3 mm total height) and automated optical inspection (AOI)-friendly layouts. | Choose for space-constrained consumer electronics where 1.25 mm max height is mandatory; verify thermal interface to heatsink per JEDEC JESD51-14. |
Compared with DMT8008LFG-7, DMT8008LK3-13 offers superior thermal dissipation at the cost of board area, while DMTH8008LPS-13 trades package height for tighter thermal resistance - both require layout revision and are not pin-compatible replacements.
Availability
DMT8008LFG-7 is available at Aetrix Electronics and suitable for LED backlighting, industrial DC-DC converters, and USB-C PD power delivery systems requiring stable component supply, long-term lifecycle support, and RoHS 3-compliant sourcing.
Supply support for DMT8008LFG-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The DMT8008LFG belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-density power conversion in industrial, computing, and lighting applications where thermal performance and gate-drive simplicity are critical.
FAQ
What is the maximum safe operating temperature for DMT8008LFG-7?
The DMT8008LFG-7 has a specified junction temperature range of –55°C to +150°C. Its absolute maximum rating is TJ = +150°C, and thermal shutdown is not integrated - system-level thermal design must ensure TJ remains ≤150°C under worst-case ambient, power dissipation, and airflow conditions. Derating curves in Figure 12 confirm 48 A is valid only at TC = +25°C.
Can DMT8008LFG-7 be driven directly by a 3.3 V microcontroller GPIO?
No - the gate threshold voltage VGS(TH) ranges from 1.2 V to 2.5 V, but RDS(ON) is not guaranteed below VGS = 4.5 V. At 3.3 V, RDS(ON) rises significantly (>20 mΩ), increasing conduction loss. A dedicated gate driver or level shifter is required for reliable 3.3 V logic compatibility.
Is the PowerDI3333-8 package lead-free and RoHS 3 compliant?
Yes - DMT8008LFG-7 uses matte tin annealed over copper leadframe and green molding compound meeting EU Directive 2015/863/EU (RoHS 3), with bromine and chlorine each <900 ppm and antimony <1000 ppm. Compliance is certified per Diodes Incorporated's published quality documentation.
Does DMT8008LFG-7 include integrated ESD protection?
No - the device does not integrate ESD protection circuitry. Per datasheet Note 9, gate oxide is rated for ±20 V VGSS, but human-body-model (HBM) ESD rating is not specified. External TVS diodes or layout best practices (short gate traces, ground shielding) are recommended for handling-sensitive assembly environments.
DMT8008LFG-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Ta), 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 37.7 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2254 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1W (Ta), 23.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- POWERDI3333-8
DMT8008LFG-7 FAQ
1.How can I place an order for DMT8008LFG-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT8008LFG-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT8008LFG-7 reliable?
The price and inventory of DMT8008LFG-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT8008LFG-7 is usually 5 days.
3.What payment methods are accepted for DMT8008LFG-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT8008LFG-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT8008LFG-7?
DMT8008LFG-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT8008LFG-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT8008LFG-7?
For technical support, including DMT8008LFG-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT8008LFG-7 requirements.
6.How does Aetrix verify that DMT8008LFG-7 is sourced from the original manufacturer or authorized distributors?
All DMT8008LFG-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT8008LFG-7 meets industry standards.
7.What is the process for return or replacement of DMT8008LFG-7?
All DMT8008LFG-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT8008LFG-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT8008LFG-7 part is unused and in its original packaging.
Return procedure for DMT8008LFG-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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