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Diodes Incorporated DMT8008LK3-13

Part No.:
DMT8008LK3-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixDMT8008LK3-13.pdf
Description:
MOSFET BVDSS: 61V~100V TO252 T&R
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,221

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Product details

Overview

DMT8008LK3-13 from Diodes Incorporated is an 80V N-channel enhancement-mode MOSFET in TO252 (DPAK) package, rated for 95A continuous drain current at TC = +25°C, with RDS(on) of 7.0mΩ @ VGS = 10V and 11mΩ @ VGS = 4.5V, optimized for high-efficiency DC-DC converters and power management stages in industrial and lighting systems.

For engineers reviewing the DMT8008LK3-13 datasheet, DMT8008LK3-13 pinout, DMT8008LK3-13 application, or DMT8008LK3-13 equivalent, key selection criteria include its 1.1°C/W junction-to-case thermal resistance, 100% production-tested UIS robustness, low Qg (41.2nC @ 10V), and AEC-Q101-capable qualification path for automotive-grade deployment.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve low RDS(on) and fast switching with controlled gate charge (Qgd = 10.6nC). Its body diode exhibits tRR = 61ns and QRR = 181nC under IF = 2A, di/dt = 100A/μs conditions, supporting synchronous rectification and hard-switched topologies.

The device operates across –55°C to +150°C junction temperature range, with thermal resistance RθJC = 1.1°C/W and RθJA = 45°C/W on 1-inch² copper pad - enabling high-power density designs without active cooling in space-constrained PCB layouts.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 80V - Supports 48V bus and 60V transient clamping in industrial power rails
RDS(on) @ 10V 7.0mΩ max - Enables <1.5W conduction loss at 95A, critical for >95% efficiency in 12V–48V buck converters
Qg @ 10V 41.2nC - Reduces gate drive power and enables >500kHz switching with standard 1A drivers
EAS 26.5mJ - Confirmed avalanche energy rating ensures reliability in inductive load switching without snubbers
RθJC 1.1°C/W - Allows direct heatsink mounting via exposed drain pad for thermal management in high-current applications
ID (TC=70°C) 76A - Sustains 75A continuous operation at 70°C case temperature, matching typical PCB hot-spot limits
tRR 61ns - Minimizes reverse recovery losses in synchronous rectifier configurations

Pinout & Package

Package: TO252 (DPAK), surface-mount, thermally enhanced with exposed drain pad (Pin 2) for heatsinking. Molded green compound, RoHS-compliant, MSL Level 3.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (G) Gate Control input requiring ≤2.8V VGS(th); low Ciss (2345pF) eases drive design
Pin 2 (D) Drain Exposed metal pad - electrically connected to drain; primary thermal path to PCB heatsink
Pin 3 (S) Source Reference node for gate drive; connects to power ground plane; supports body diode conduction

Key Features

Feature Design Value
100% UIS tested Guarantees robustness against unclamped inductive switching events up to 23A/26.5mJ without derating
Low Qg/Qgd ratio Qgd/Qg ≈ 26% - improves Miller immunity and enables stable high-speed switching
Halogen- & antimony-free <900ppm Br, <900ppm Cl, <1000ppm Sb - meets strict environmental compliance for automotive and medical end equipment
Thermally optimized layout 0.33g mass + 1.1°C/W RθJC - delivers 3× higher power density vs. comparable SO-8 MOSFETs
Production-traceable marking T808LK + YYWW date code - enables full lot traceability for automotive PPAP and quality audits

Applications

Server VRM Power Stage Automotive LED Backlight Driver

Use Scenario: High-current, high-frequency buck converter supplying CPU core voltage in 1U rack servers.

IC Role / Device Role / Timing Role: Primary high-side switch in multiphase VRM, operating at 600kHz with 30A+ per phase.

Use Value: 7.0mΩ RDS(on) and 41.2nC Qg reduce total losses by ≥18% vs. legacy 10mΩ DPAK MOSFETs, directly improving system efficiency and thermal margin.

Use Scenario: Constant-current boost driver powering 4–8-series automotive LCD backlight strings (36–72V output).

IC Role / Device Role / Timing Role: Main switching FET in boost topology, handling 5–7A peak inductor current with 200kHz PWM.

Use Value: 100% UIS testing ensures survival during cold-crank transients (up to 65V), while 150°C TJ(max) supports under-hood ambient temperatures.

Industrial 48V DC-DC Converter White Goods Motor Inverter Stage

Use Scenario: Isolated 48V-to-12V flyback or active-clamp forward converter in PLC power supplies.

IC Role / Device Role / Timing Role: Primary switch with ZVS capability enabled by low Coss (842pF) and fast tF (43.2ns).

Use Value: 11mΩ RDS(on) @ 4.5V allows direct logic-level drive from microcontrollers, eliminating level-shifters and reducing BOM count.

Use Scenario: Half-bridge leg in BLDC motor inverter for washing machine drum drives (24–40V bus).

IC Role / Device Role / Timing Role: Low-side switch handling 25A RMS current with 100% duty-cycle capability via thermal design.

Use Value: 76A ID @ TC=70°C and 1.1°C/W RθJC enable compact heatsinkless design, reducing mechanical footprint by 35%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL110N8F7AG 80V, 5.2mΩ @ 10V, TO252, but Qg = 52nC - 26% higher gate charge Higher drive loss limits usable frequency to ≤350kHz in high-current VRMs Prefer DMT8008LK3-13 where >500kHz operation or minimal gate drive power is required
ON-SEMI NTMFS5C673NL 60V, 5.0mΩ @ 10V, same TO252 package, but lower VDSS and no UIS rating Not suitable for 48V systems with >60V transients or inductive turn-off stress Select DMT8008LK3-13 for 80V-rated, transient-robust designs requiring production-validated avalanche performance

Compared with STL110N8F7AG and NTMFS5C673NL, DMT8008LK3-13 uniquely balances 80V rating, sub-7mΩ RDS(on), low Qg, and 100% UIS screening - making it optimal for high-reliability, high-frequency industrial and automotive power stages where both voltage headroom and switching efficiency are critical.

Availability

DMT8008LK3-13 is available at Aetrix Electronics and suitable for server VRM power stages, automotive LED backlight drivers, and industrial 48V DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for DMT8008LK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.

The DMT8008LK3 belongs to Diodes' high-current DPAK MOSFET product line, engineered specifically for high-efficiency, thermally constrained power conversion in space-limited applications such as server VRMs and automotive lighting systems.

FAQ

What is the maximum safe operating junction temperature for DMT8008LK3-13?

The absolute maximum junction temperature is +150°C, validated across all electrical parameters in the datasheet. Derating begins at TJ > 125°C for continuous operation, and thermal design must ensure RθJA × PD + TA ≤ 150°C. The device's 1.1°C/W RθJC enables reliable operation at 76A with proper PCB copper area.

Does DMT8008LK3-13 support logic-level gate drive?

Yes - with VGS(th) ranging from 1.3V to 2.8V and RDS(on) = 11mΩ @ VGS = 4.5V, it is fully compatible with 3.3V and 5V logic outputs. Gate drive circuits must deliver ≥21.7nC (at 4.5V) to achieve specified switching times; a 1Ω series resistor is recommended for ringing suppression.

Is DMT8008LK3-13 qualified for automotive applications?

While not pre-qualified to AEC-Q101, Diodes states this part is manufactured in IATF 16949-certified facilities and supports PPAP documentation upon request. Its 100% UIS testing, halogen-free construction, and –55°C to +150°C rating align with automotive power system requirements, pending customer-specific qualification.

How does the body diode performance compare to Schottky alternatives?

The integrated body diode has VSD = 0.8–1.2V @ IS = 20A and tRR = 61ns, offering lower forward drop than standard silicon diodes but higher than Schottky. It eliminates external diode cost in synchronous rectifiers, though Schottky co-packaging may be preferred where <0.5V VF is mandatory at low currents.

DMT8008LK3-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
95A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
7mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:
2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
41.2 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2345 pF @ 40 V
FET Feature:
-
Power Dissipation (Max):
1.7W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252 (DPAK)

DMT8008LK3-13 FAQ

1.How can I place an order for DMT8008LK3-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT8008LK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT8008LK3-13 reliable?

The price and inventory of DMT8008LK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT8008LK3-13 is usually 5 days.

3.What payment methods are accepted for DMT8008LK3-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT8008LK3-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT8008LK3-13?

DMT8008LK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT8008LK3-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT8008LK3-13?

For technical support, including DMT8008LK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT8008LK3-13 requirements.

6.How does Aetrix verify that DMT8008LK3-13 is sourced from the original manufacturer or authorized distributors?

All DMT8008LK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT8008LK3-13 meets industry standards.

7.What is the process for return or replacement of DMT8008LK3-13?

All DMT8008LK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT8008LK3-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT8008LK3-13 part is unused and in its original packaging.

Return procedure for DMT8008LK3-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMT8008LK3-13 Tags

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