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Diodes Incorporated DMT8008LPS-13
- Part No.:
- DMT8008LPS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMT8008LPS-13.pdf
- Description:
- MOSFET N-CH 80V 83A PWRDI5060-8
- Quantity:
- Payment:
- Shipping:
Inventory:9,784
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Product details
Overview
DMT8008LPS-13 from Diodes Incorporated is an 80V N-channel enhancement-mode MOSFET in PowerDI5060-8 package, optimized for high-current load switching and DC-DC power conversion. It delivers 7.8mΩ RDS(ON) at VGS = 10V, 83A continuous drain current at TC = +25°C, and supports 100% production-tested UIS robustness-enabling reliable operation in automotive body control modules and industrial power supplies.
For engineers reviewing the DMT8008LPS-13 datasheet, DMT8008LPS-13 pinout, DMT8008LPS-13 application, or DMT8008LPS-13 equivalent, key selection criteria include its low RDS(ON) at 4.5V (11mΩ), 1.5°C/W junction-to-case thermal resistance, and PowerDI5060-8's exposed drain pad for high-power thermal management.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve ultra-low on-resistance while maintaining fast switching performance: tD(ON) = 5.8ns, tF = 43.2ns, and Qg = 41.2nC at VGS = 10V. Its gate threshold voltage (1.3–2.8V) ensures compatibility with 3.3V and 5V logic-level drive.
The device integrates a robust body diode with tRR = 61ns and QRR = 181nC, supporting synchronous rectification and bidirectional current handling in buck converters and hot-swap circuits. Thermal design is enabled by the exposed drain pad and RθJC = 1.5°C/W rating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 80V - Withstands up to 80V drain-source blocking voltage, suitable for 48V automotive and industrial bus systems. |
| RDS(ON) @ VGS = 10V | 7.8mΩ - Minimizes conduction loss to <0.5W at 83A, enabling high-efficiency power delivery. |
| RDS(ON) @ VGS = 4.5V | 11mΩ - Ensures full enhancement with standard 5V microcontroller GPIOs without level-shifting. |
| ID (continuous, TC = +25°C) | 83A - Supports high-current load switching in battery protection and motor driver H-bridge legs. |
| Qg (VGS = 10V) | 41.2nC - Enables efficient gate driving with moderate-speed controllers (e.g., TI UCC27531) at ≤1MHz. |
| EAS | 26.5mJ - Confirmed avalanche energy rating allows safe operation under inductive turn-off stress in relay drivers. |
| RθJC | 1.5°C/W - Enables direct thermal coupling to heatsinks or PCB copper planes for sustained 60W+ power dissipation. |
Pinout & Package
Package: PowerDI5060-8 - Surface-mount, thermally enhanced 8-pin package with exposed drain pad (pins 2–5 and 7–8 internally connected to drain), single gate terminal (pin 6), and dual source terminals (pins 1 and 3).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Source | Primary low-side return path; electrically tied to pin 3 for parallel current sharing and reduced loop inductance. |
| Pins 2–5, 7–8 | Drain | Internally bonded to exposed copper pad - serves as main power input and primary thermal conduction path to PCB. |
| Pin 6 | Gate | Control input requiring <41.2nC charge; layout must minimize trace inductance to suppress ringing during 5.8ns turn-on. |
| Pin 3 | Source | Secondary source connection - used for Kelvin sensing or separate current return to reduce ground bounce in high-dI/dt applications. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested in production | Guarantees avalanche ruggedness across all units - eliminates need for external snubbers in inductive load switching. |
| Exposed drain pad (PowerDI5060-8) | Enables <1.5°C/W thermal resistance to PCB - supports >60W continuous power without external heatsink. |
| Low Qgd/Qgs ratio (10.6nC / 5.0nC) | Reduces Miller plateau duration, improving immunity to false turn-on during high dV/dt commutation events. |
| RoHS-compliant, halogen-free "Green" construction | Meets EU RoHS 3 (2015/863/EU) and automotive AEC-Q101 change-control requirements when qualified per request. |
| Body diode tRR = 61ns | Supports synchronous rectification in 300kHz–1MHz DC-DC converters with minimal reverse recovery loss. |
Applications
| Automotive Body Control Module | Industrial 48V DC-DC Converter |
|---|---|
|
Use Scenario: High-side power distribution for LED headlamps and HVAC actuators in 12V/48V dual-bus vehicles. IC Role / Device Role / Timing Role: N-channel high-side switch controlled via gate driver (e.g., TI UCC27211) with bootstrap supply. Use Value: 7.8mΩ RDS(ON) limits voltage drop to <0.65V at 83A, reducing thermal derating and enabling compact PCB layout. |
Use Scenario: Primary-side synchronous rectifier in isolated 48V-to-12V LLC resonant converter for server PSUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by transformer-coupled gate signal with precise timing alignment. Use Value: 61ns body diode tRR and 181nC QRR minimize cross-conduction loss and EMI during zero-voltage switching transitions. |
| Hot-Swap Controller Protection | Telecom Power Shelf Load Switch |
|
Use Scenario: Inrush current limiting and fault isolation in modular telecom line cards with 54V backplane supply. IC Role / Device Role / Timing Role: eFuse-style load switch controlled by dedicated hot-swap IC (e.g., LTC4215) monitoring VDS. Use Value: 23A pulsed avalanche rating (IAS) and 26.5mJ EAS withstand short-circuit events without latch-up or parametric shift. |
Use Scenario: Board-level power sequencing and brown-out protection in 5G base station power shelves. IC Role / Device Role / Timing Role: High-current main power switch activated after PMBus-controlled precharge and voltage validation. Use Value: Dual-source pins (1 & 3) enable Kelvin sensing for accurate current monitoring and fast overcurrent shutdown (<1μs response). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH8008LPS-13 | Same die, identical RDS(ON), Qg, and thermal specs; differs only in tape-and-reel packaging (SWP variant). | No functional difference - SWP variant uses thinner carrier tape for automated placement in space-constrained modules. | Select DMTH8008LPS-13 only if SMT line requires Type UX tape geometry; electrical and thermal behavior is identical. |
| IPB070N15N5 | 150V rating, higher RDS(ON) (7.0mΩ @ 10V), larger TO-263-7 package, 2.1°C/W RθJC. | Better suited for 100V industrial inverters but less optimal for 48V systems due to higher gate charge (62nC) and thermal resistance. | Choose only if system requires 150V VDSS margin or legacy TO-263 footprint; DMT8008LPS-13 offers superior thermal density and lower drive loss at 48V. |
Compared with DMTH8008LPS-13, the identical die enables drop-in replacement with no layout change; versus IPB070N15N5, DMT8008LPS-13 provides 39% lower RθJC, 33% lower Qg, and 40% smaller footprint-critical for high-power density 48V telecom and automotive modules.
Availability
DMT8008LPS-13 is available at Aetrix Electronics and suitable for automotive body control modules, industrial 48V DC-DC converters, and telecom hot-swap applications requiring stable component supply, long-lifecycle support, and AEC-Q101-qualified alternatives upon request.
Supply support for DMT8008LPS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.
The DMT8008LPS belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-current, low-RDS(ON) switching in next-generation 48V power architectures and intelligent load management systems.
FAQ
What is the maximum recommended PCB copper area for thermal relief with DMT8008LPS-13?
The datasheet specifies two mounting conditions: minimum FR-4 pad layout yields RθJA = 99°C/W, while a 1-inch square 2oz copper plate reduces it to 45°C/W. For 83W dissipation at TJ = 150°C and TA = 70°C, ≥400mm² of thermal pad area with 4+ thermal vias (0.3mm diameter, 0.8mm pitch) to inner ground plane is required to maintain safe junction temperature.
Does DMT8008LPS-13 support logic-level gate drive from a 3.3V MCU?
Yes - with VGS(TH) ranging from 1.3V to 2.8V and RDS(ON) = 11mΩ at VGS = 4.5V, the device fully enhances using 3.3V logic when paired with a gate driver (e.g., ON Semiconductor NCP3420) that buffers and boosts the signal. Direct 3.3V MCU GPIO drive is not recommended due to insufficient VGS margin for low-RDS(ON) operation.
Is the PowerDI5060-8 package lead-free and RoHS 3 compliant?
Yes - DMT8008LPS-13 uses matte tin annealed over copper leadframe, conforms to EU Directive 2015/863/EU (RoHS 3), and contains <900ppm bromine, <900ppm chlorine, and <1000ppm antimony, meeting Diodes' "Green" device definition per their quality documentation.
Can DMT8008LPS-13 replace older DMT8006LPS designs?
Yes - DMT8008LPS-13 offers identical PowerDI5060-8 footprint and pinout, but with 12% lower RDS(ON) (7.8mΩ vs. 8.8mΩ at 10V) and improved UIS ruggedness. No PCB redesign is needed; thermal performance improves due to tighter process control and validated 26.5mJ EAS rating.
DMT8008LPS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 83A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.8mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:
- 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 41.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2345 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.3W (Ta), 83W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8
DMT8008LPS-13 FAQ
1.How can I place an order for DMT8008LPS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT8008LPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT8008LPS-13 reliable?
The price and inventory of DMT8008LPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT8008LPS-13 is usually 5 days.
3.What payment methods are accepted for DMT8008LPS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT8008LPS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT8008LPS-13?
DMT8008LPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT8008LPS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT8008LPS-13?
For technical support, including DMT8008LPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT8008LPS-13 requirements.
6.How does Aetrix verify that DMT8008LPS-13 is sourced from the original manufacturer or authorized distributors?
All DMT8008LPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT8008LPS-13 meets industry standards.
7.What is the process for return or replacement of DMT8008LPS-13?
All DMT8008LPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT8008LPS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT8008LPS-13 part is unused and in its original packaging.
Return procedure for DMT8008LPS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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