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Diodes Incorporated DMT8008LSS-13
- Part No.:
- DMT8008LSS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
DMT8008LSS-13.pdf
- Description:
- MOSFET BVDSS: 61V-100V SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,035
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Product details
Overview
DMT8008LSS from Diodes Incorporated is an 80V N-channel enhancement-mode MOSFET in SO-8 package, rated for 13A continuous drain current at 25°C, with RDS(ON) = 8 mΩ @ VGS = 10 V and 12 mΩ @ VGS = 4.5 V, optimized for synchronous rectification and high-efficiency DC-DC converters.
For engineers reviewing the DMT8008LSS datasheet, DMT8008LSS pinout, DMT8008LSS application, or DMT8008LSS equivalent, key selection criteria include low on-resistance at 4.5V gate drive, 100% production-tested UIS robustness, SO-8 thermal performance (RθJC = 10°C/W), and body diode recovery charge (QRR = 59 nC) for hard-switched topologies.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve low RDS(ON) while maintaining fast switching (tF = 44 ns, Qg = 47 nC @ 10 V) and low output capacitance (Coss = 797 pF). Its gate threshold voltage (VGS(TH) = 1.3–2.8 V) ensures stable turn-on under wide temperature range (−55°C to +150°C).
The device integrates a low-VSD body diode (0.8–1.2 V @ 20 A) with tRR = 43 ns and QRR = 59 nC, enabling efficient reverse recovery in synchronous buck and LLC resonant converters where shoot-through immunity and diode conduction losses are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 80 V - supports 48V input bus designs with 20% margin for transient spikes |
| RDS(ON) | 8 mΩ @ VGS = 10 V - enables ≤1.3 W conduction loss at 13 A in TO-252-equivalent SO-8 footprint |
| ID (continuous) | 13 A @ TA = 25°C - usable up to 10 A at 70°C ambient with standard FR-4 layout |
| Qg | 47 nC @ VGS = 10 V - determines gate driver power requirement and switching loss trade-off |
| EAS | 109 mJ - withstands unclamped inductive energy in motor drive or converter startup fault conditions |
| tRR | 43 ns - limits reverse recovery overshoot and EMI in high-frequency synchronous rectification |
| RθJC | 10°C/W - allows direct heatsinking via exposed drain pads in SO-8 layout for >2.2 W dissipation |
Pinout & Package
Package: SO-8 (Surface-Mount, 8-pin, exposed drain pad), JEDEC MS-012AC compliant, with matte tin annealed terminals and green molding compound (UL 94V-0).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires <2.8 V threshold to fully enhance; low Ciss (2840 pF) eases gate drive design |
| 2,3,4,5,6,7 (D) | Drain (common) | High-side switch node connection; all six pins tied internally to drain; provides low-inductance path and thermal conduction to PCB |
| 8 (S) | Source | Power return reference; used for current sensing and gate drive referencing; connects to internal source bond wires |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Guarantees avalanche ruggedness (IAS = 27 A, EAS = 109 mJ) without derating in real-world inductive load transients |
| Low RDS(ON) @ 4.5 V | 12 mΩ enables use with 5 V logic-level controllers (e.g., microcontroller GPIO or PWM ICs) without level-shifting |
| Green construction | Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb); RoHS 3 compliant and IATF 16949 manufacturable |
| Fast body diode | QRR = 59 nC and tRR = 43 ns reduce switching loss and voltage spike during freewheeling in buck converters |
Applications
| Server VRM Power Stage | Industrial DC-DC Converter |
|---|---|
Use Scenario: High-current, high-frequency (300–600 kHz) point-of-load regulator supplying CPU core voltage. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in dual-phase buck converter, operating with 4.5 V gate drive from controller. Use Value: 12 mΩ RDS(ON) at 4.5 V reduces conduction loss by 22% vs. comparable 15 mΩ parts, improving full-load efficiency by ≥0.8%. | Use Scenario: 24–48 V input to 12 V/10 A isolated DC-DC module for PLC I/O power rails. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp flyback topology. Use Value: 109 mJ EAS rating ensures reliable operation during output short-circuit events without latch-up or failure. |
| Automotive Body Control Module | Telecom Rectifier Board |
Use Scenario: 12 V battery-fed 5 A load switch for LED lighting or solenoid control in BCM subassembly. IC Role / Device Role / Timing Role: High-side load switch with integrated protection, driven by 5 V MCU output. Use Value: VGS(TH) max of 2.8 V guarantees turn-on margin across −40°C to +125°C junction range, eliminating external gate boosters. | Use Scenario: 48 V telecom rectifier board delivering 20 A per phase in distributed power architecture. IC Role / Device Role / Timing Role: Primary-side high-side switch in interleaved buck converter with 500 kHz switching frequency. Use Value: Coss = 797 pF and Qgd = 11 nC minimize Miller-induced switching delay, supporting ZVS implementation below 100 ns dead time. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(ON) = 9.5 mΩ @ 10 V; higher Qg (62 nC); no production UIS test | Lacks guaranteed avalanche rating; less suitable for unclamped inductive loads | Prefer DMT8008LSS where fault robustness is required in motor or relay drive |
| SiHFL024 | RDS(ON) = 2.4 mΩ @ 10 V but only 40 V VDSS; SO-8 package with different pinout (G-S-D-D-D-D-D-G) | Not voltage-compatible for 48 V+ systems; pin mismatch prevents drop-in replacement | Select DMT8008LSS when 80 V rating and SO-8 standard pinout are mandatory |
Compared with IRF7470PBF and SiHFL024, DMT8008LSS uniquely balances 80 V rating, 4.5 V logic compatibility, production-tested avalanche capability, and industry-standard SO-8 pin configuration-making it optimal for space-constrained, high-reliability 48 V industrial and telecom power stages.
Availability
DMT8008LSS is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and automotive body control modules requiring stable component supply and long-term lifecycle support.
Supply support for DMT8008LSS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The DMT8008LSS belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-density power conversion in computing, industrial, and communications infrastructure where low RDS(ON), fast switching, and ruggedness are essential.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The DMT8008LSS supports 10 A continuous drain current at TA = +70°C with standard FR-4 PCB layout (2 oz copper, minimum recommended pad area). This rating assumes natural convection cooling and accounts for RθJA = 58°C/W under enhanced thermal conditions.
Does this MOSFET require a gate resistor for stability?
A gate resistor (typically 1.6 Ω, as used in datasheet switching tests) is recommended to dampen ringing caused by gate loop inductance and prevent unintended oscillation. The device's Rg = 1.7 Ω intrinsic gate resistance helps limit peak dV/dt but does not eliminate need for external series resistance in high-speed layouts.
Is the SO-8 package thermally enhanced?
Yes-the SO-8 package features an exposed drain pad that serves as both electrical connection and primary thermal path. When soldered to a 1-inch² copper pour, RθJC drops to 10°C/W and total power dissipation increases to 2.2 W, enabling higher current operation than standard SO-8 variants without thermal pads.
Can DMT8008LSS be used in automotive applications?
While DMT8008LSS meets AEC-Q101 stress test requirements and is manufactured in IATF 16949-certified facilities, it is not pre-qualified for automotive use. Customers requiring PPAP documentation or AEC-Q101 certification must contact Diodes Incorporated directly to initiate qualification for specific vehicle applications.
DMT8008LSS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 13A (Ta), 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id:
- 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 47 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2840 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.3W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
DMT8008LSS-13 FAQ
1.How can I place an order for DMT8008LSS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT8008LSS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT8008LSS-13 reliable?
The price and inventory of DMT8008LSS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT8008LSS-13 is usually 5 days.
3.What payment methods are accepted for DMT8008LSS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT8008LSS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT8008LSS-13?
DMT8008LSS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT8008LSS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT8008LSS-13?
For technical support, including DMT8008LSS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT8008LSS-13 requirements.
6.How does Aetrix verify that DMT8008LSS-13 is sourced from the original manufacturer or authorized distributors?
All DMT8008LSS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT8008LSS-13 meets industry standards.
7.What is the process for return or replacement of DMT8008LSS-13?
All DMT8008LSS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT8008LSS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT8008LSS-13 part is unused and in its original packaging.
Return procedure for DMT8008LSS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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