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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT8008SCT

Name: DMT8008SCT
Brand: Diodes Incorporated
SKU: DMT8008SCT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT8008SCT

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: DMT8008SCT.pdf

Description:: MOSFET BVDSS: 61V~100V TO220AB T

Quantity:: RFQ Add To RFQ list

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Inventory:2,983

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Product details

Overview

DMT8008SCT from Diodes Incorporated is an 80V N-channel enhancement-mode power MOSFET in TO220AB package, rated for 111A continuous drain current at T_C = +25°C, with R_DS(ON) = 5.8 mΩ (typ) @ V_GS = 10V and BVDSS = 80V. It delivers low conduction loss and fast switching for high-efficiency motor control, DC-DC converters, and backlighting circuits.

For engineers reviewing the DMT8008SCT datasheet, DMT8008SCT pinout, DMT8008SCT application, or DMT8008SCT equivalent, key selection criteria include its 80V breakdown rating, sub-6 mΩ on-resistance at 10V gate drive, TO220AB thermal performance (R_θJC = 0.75°C/W), body diode recovery characteristics (t_RR = 43 ns), and AEC-Q101 readiness for automotive-grade power stages.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(ON) × Q_g figure-of-merit, enabling high-frequency synchronous rectification and hard-switched PWM operation. Its 80V V_DSS supports 48V industrial bus and 24V automotive systems with margin against transients.

The device integrates a robust intrinsic body diode with t_RR = 43 ns and Q_RR = 49 nC, supporting efficient freewheeling in buck, half-bridge, and H-bridge topologies without external Schottky supplementation in moderate-speed applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	80 V - Withstands 80V drain-source blocking voltage, suitable for 48V nominal systems with 65V transient margin.
R_DS(ON)	5.8 mΩ (typ) @ V_GS = 10V - Enables <0.5W conduction loss at 10A, critical for thermally constrained motor drivers.
I_D (cont)	111 A @ T_C = +25°C - Supports high-current load switching when mounted on heatsink with low R_θJC.
t_RR	43 ns - Limits reverse recovery energy loss during commutation, reducing switching stress in bridge legs.
C_iss	1950 pF - Determines gate drive strength requirement; ~23 nC total gate charge enables use with standard 1A peak drivers.
R_θJC	0.75 °C/W - Allows >100W power dissipation with ≤75°C junction-to-case rise, essential for compact heatsink designs.
V_GS(TH)	2–4 V - Ensures reliable turn-on with 5V logic-level gate drivers while avoiding spurious activation near ground.

Pinout & Package

Package: TO220AB - Through-hole, single-ended heat-transfer package with exposed drain tab (pin 2), standardized for mechanical mounting and thermal interface to heatsinks. Molded green compound, UL 94V-0 rated, lead-free and RoHS compliant.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heatsink interface	Electrically connected to metal tab; must be electrically isolated from chassis unless system design requires common-drain configuration.
Source	Reference node for gate control / return path	Low-inductance connection point for gate driver return and current sensing; ties directly to PCB ground plane under device.
Gate	Control input for channel modulation	High-impedance terminal requiring low-impedance gate driver and local 10–100nF decoupling to suppress ringing during fast dV/dt transitions.

Key Features

Feature	Design Value
Low R_DS(ON) × Q_g FoM	~133 Ω·nC - Reduces combined conduction and switching losses in 100–500 kHz DC-DC stages.
Fast body diode recovery	t_RR = 43 ns, Q_RR = 49 nC - Minimizes shoot-through risk and EMI in synchronous rectifiers without external diode.
High avalanche ruggedness	E_AS = 80 mJ - Withstands repetitive inductive switching events in motor drives without degradation.
Thermal efficiency	R_θJC = 0.75°C/W - Enables >150W pulsed operation with minimal heatsink mass in space-constrained enclosures.

Applications

Motor Control

DC-DC Converters

Use Scenario: High-current H-bridge driver for 24–48V brushed DC motors in industrial actuators and HVAC blowers.

IC Role / Device Role / Timing Role: Main power switch in low-side or high-side configuration, handling bidirectional current up to 111A peak.

Use Value: Sub-6 mΩ R_DS(ON) reduces I²R heating at stall current, extending thermal margin and enabling smaller heatsinks.

Use Scenario: Primary-side synchronous rectifier in 48V-to-12V isolated buck converter for telecom power shelves.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode, operating at 300 kHz with zero-voltage switching assist.

Use Value: 43 ns body diode recovery ensures clean commutation during dead-time, lowering output ripple and EMI.

Automotive Body Control

LED Backlighting

Use Scenario: Load switch for headlight leveling actuators and seat position memory modules in AEC-Q101-compliant ECUs.

IC Role / Device Role / Timing Role: High-side or low-side power distribution switch with integrated overtemperature protection via thermal shutdown behavior.

Use Value: 80V BVDSS accommodates 12V/24V battery systems with load-dump transients up to ±65V per ISO 7637-2.

Use Scenario: Constant-current LED string driver for automotive instrument cluster backlighting (6–12 strings, 350 mA each).

IC Role / Device Role / Timing Role: PWM-controlled current sink in boost-derived constant-current topology, switching at 1–5 kHz.

Use Value: Low gate charge (34 nC @ 10V) enables efficient driving from microcontroller GPIO with minimal external buffer.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF55-08	80V, 80A, R_DS(ON) = 8.5 mΩ @ 10V, TO220FP package (lower power dissipation capability)	Lower current rating and higher R_DS(ON) limit use in <90A continuous applications; lacks AEC-Q101 qualification	Select when cost sensitivity outweighs thermal performance and automotive compliance requirements.
IRF3205PBF	55V, 110A, R_DS(ON) = 8.0 mΩ @ 10V, TO220AB - lower voltage rating, higher on-resistance	Not suitable for 48V+ systems due to 55V V_DSS; higher conduction loss increases thermal load at full load	Acceptable only in legacy 24V non-automotive designs where 55V margin suffices and thermal headroom exists.

Compared with STP80NF55-08 and IRF3205PBF, DMT8008SCT provides superior 80V rating, lower 5.8 mΩ on-resistance, and documented AEC-Q101 readiness-making it the preferred choice for new 48V industrial and automotive power stages demanding high efficiency and reliability.

Availability

DMT8008SCT is available at Aetrix Electronics and suitable for motor control, DC-DC converters, and LED backlighting applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp.

Supply support for DMT8008SCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, automotive, and computing markets.

The DMT8008SCT belongs to Diodes' high-current TrenchMOS™ power MOSFET product line, engineered specifically for high-efficiency, high-density power conversion and motor drive systems where low R_DS(ON), fast switching, and rugged avalanche performance are critical.

FAQ

What is the maximum continuous drain current for DMT8008SCT at 70°C case temperature?

The DMT8008SCT supports 89A continuous drain current at T_C = +70°C, derated from 111A at +25°C per its thermal resistance profile (R_θJC = 0.75°C/W). This reflects real-world thermal constraints in enclosed enclosures without forced air cooling.

Does DMT8008SCT have an integrated body diode, and what are its key recovery parameters?

Yes, DMT8008SCT features a monolithic body diode with reverse recovery time t_RR = 43 ns and recovered charge Q_RR = 49 nC at I_S = 14A and di/dt = 100 A/μs. These values are measured under standardized conditions and enable predictable freewheeling behavior in bridge configurations.

Is DMT8008SCT qualified to AEC-Q101, and what does that mean for automotive use?

Diodes Incorporated states that DMT8008SCT is designed for automotive applications requiring AEC-Q101 qualification, PPAP capability, and manufacturing in IATF 16949-certified facilities. Customers must confirm final qualification status and PPAP documentation directly with Diodes or authorized representatives before automotive deployment.

What is the gate threshold voltage range, and how does it affect logic-level drive compatibility?

The gate threshold voltage V_GS(TH) is specified from 2.0 V to 4.0 V at I_D = 1 mA. This range ensures reliable turn-on with standard 5V microcontroller outputs while preventing accidental activation from noise or floating gate conditions, supporting direct GPIO drive without level-shifting circuitry.

DMT8008SCT Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 111A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1950 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 2.4W (Ta), 167W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

DMT8008SCT FAQ

1.How can I place an order for DMT8008SCT through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT8008SCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT8008SCT reliable?

The price and inventory of DMT8008SCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT8008SCT is usually 5 days.

3.What payment methods are accepted for DMT8008SCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT8008SCT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT8008SCT?

DMT8008SCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT8008SCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT8008SCT?

For technical support, including DMT8008SCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT8008SCT requirements.

6.How does Aetrix verify that DMT8008SCT is sourced from the original manufacturer or authorized distributors?

All DMT8008SCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT8008SCT meets industry standards.

7.What is the process for return or replacement of DMT8008SCT?

All DMT8008SCT units undergo pre-shipment inspection (PSI). If there is an issue with DMT8008SCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT8008SCT part is unused and in its original packaging.

Return procedure for DMT8008SCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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