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Diodes Incorporated DMT8008SK3-13
- Part No.:
- DMT8008SK3-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
DMT8008SK3-13.pdf
- Description:
- MOSFET BVDSS: 61V~100V TO252 T&R
- Quantity:
- Payment:
- Shipping:
Inventory:8,090
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Product details
Overview
DMT8008SK3-13 from Diodes Incorporated is an 80V N-channel enhancement-mode MOSFET in TO252 (DPAK) package, rated for 90A continuous drain current at TC = +25°C, with RDS(on) of 7.8mΩ @ VGS = 10V and 11mΩ @ VGS = 6V. It delivers low conduction and switching losses in high-efficiency DC-DC converters and LED backlighting power stages.
For engineers reviewing the DMT8008SK3-13 datasheet, DMT8008SK3-13 pinout, DMT8008SK3-13 application, or DMT8008SK3-13 equivalent, key selection criteria include its 100% production-tested UIS capability, low Qg (34nC @ VGS = 10V), junction-to-case thermal resistance of 1.1°C/W, and AEC-Q101 readiness for automotive-grade reliability validation.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low RDS(on) and fast switching dynamics. Its gate threshold voltage (2–4V) enables robust drive compatibility with 5V and 3.3V logic controllers, while the 1.7Ω gate resistance supports controlled turn-on/turn-off timing without external gate resistors in many designs.
The device integrates a low-forward-voltage body diode (VSD = 0.8–1.2V @ IS = 14A) with 43ns reverse recovery time and 49nC QRR, making it suitable for synchronous rectification and freewheeling in buck and half-bridge topologies where diode conduction occurs during dead-time intervals.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 80V - Supports input rails up to 64V DC with 20% margin for transient spikes in industrial and automotive power supplies. |
| RDS(on) @ VGS = 10V | 7.8mΩ - Enables <1.2W conduction loss at 40A, critical for thermally constrained PCB layouts in compact DC-DC modules. |
| Qg @ VGS = 10V | 34nC - Reduces gate drive power and allows use of lower-current drivers in high-frequency (>500kHz) switching applications. |
| EAS | 80mJ - Confirmed by 100% production UIS testing, ensuring survivability under inductive load switching faults without derating. |
| RθJC | 1.1°C/W - Enables direct heatsinking via the exposed drain pad, supporting >70W power dissipation with modest copper area and thermal interface. |
| ID (continuous) | 90A @ TC = +25°C - Validated for high-current output stages in server VRMs and telecom POL converters when mounted on 1-inch² copper. |
Pinout & Package
Package: TO252 (DPAK), surface-mount, with exposed drain pad for thermal and electrical connection. Molded green compound, UL 94V-0 rated, lead-free and halogen-free per Diodes' "Green" definition.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Low-side reference node; connects to ground or return path; carries full load current and must be routed with low-inductance copper pour. |
| Pin 2 (Gate) | Control input (G) | High-impedance MOSFET gate; requires ESD protection and layout isolation from noisy power traces to prevent false turn-on. |
| Pin 3 (Drain) | Power output (D) | Exposed metal pad (top view) - electrically and thermally connected to drain; must be soldered to large copper area for heat extraction and low inductance. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested in production | Guarantees avalanche ruggedness without need for external snubbers or design margin inflation in inductive switching circuits. |
| Low Qg / Qgd ratio | Qgd = 12nC of total Qg = 34nC - improves Miller immunity and reduces risk of shoot-through in bridge configurations. |
| Thermally enhanced DPAK | RθJC = 1.1°C/W - enables >2× higher power handling than standard SO-8 MOSFETs with identical footprint and assembly process. |
| Automotive-qualified process | Manufactured in IATF 16949-certified facilities; PPAP-capable and AEC-Q101 test-ready - supports qualification for ADAS and body control modules. |
Applications
| Server Point-of-Load Converter | Automotive LED Headlight Driver |
|---|---|
|
Use Scenario: High-current, high-frequency buck regulator supplying 12V → 1V/100A to CPU cores. IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 600kHz with precise duty-cycle control and fast transient response. Use Value: 7.8mΩ RDS(on) minimizes conduction loss at full load, while 34nC Qg ensures efficient gate drive at high frequency without excessive driver heating. |
Use Scenario: Constant-current LED driver for adaptive front lighting systems (AFS) with PWM dimming and short-circuit protection. IC Role / Device Role / Timing Role: Low-side PWM switch controlling LED string current; handles repetitive 100A surge during fault events. Use Value: 80mJ EAS and 100% UIS testing ensure reliable operation during LED open-circuit transients and thermal cycling in under-hood environments. |
| Industrial DC-DC Isolated Supply | Telecom Rectifier Module |
|
Use Scenario: Secondary-side synchronous rectifier in 48V-to-12V isolated flyback converter for factory automation controllers. IC Role / Device Role / Timing Role: Freewheeling switch replacing Schottky diode; body diode conducts during dead time, then channel conducts during active period. Use Value: VSD = 0.8–1.2V and tRR = 43ns reduce reverse recovery loss and EMI compared to discrete diodes, improving efficiency by ~1.2% at full load. |
Use Scenario: Primary-side high-side switch in 3kW telecom rectifier using phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: Hard-switched power switch operating at 100kHz with 80V bus clamping and 76A peak current capability. Use Value: 11mΩ RDS(on) @ VGS = 6V supports gate drive from standard 6V PWM controllers, eliminating level-shifting circuitry and reducing BOM count. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL110N8F7AG | 80V, 110A, RDS(on) = 5.8mΩ @ 10V, TO252, Qg = 42nC | Lower RDS(on) but higher Qg; no production UIS rating published | Preferred where conduction loss dominates and avalanche stress is minimal; requires external UIS validation. |
| IXTP80N10P | 100V, 80A, RDS(on) = 10.5mΩ @ 10V, TO220, Qg = 28nC | Higher VDSS, through-hole package, lower Qg, no UIS data in datasheet | Used where board space permits TO220 and 100V margin is required; unsuitable for surface-mount high-density designs. |
Compared with STL110N8F7AG and IXTP80N10P, DMT8008SK3-13 uniquely combines production-tested UIS, surface-mount DPAK packaging, and balanced Qg/RDS(on) for cost-sensitive, reliability-critical DC-DC and lighting applications requiring zero field-failure risk from inductive switching.
Availability
DMT8008SK3-13 is available at Aetrix Electronics and suitable for server point-of-load converters, automotive LED headlight drivers, and industrial DC-DC isolated supplies requiring stable component supply across multi-year production cycles.
Supply support for DMT8008SK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with manufacturing certified to IATF 16949 and ISO 9001 standards.
This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered for high-efficiency power conversion in automotive, industrial, and computing applications where ruggedness, thermal performance, and RoHS/Green compliance are mandatory.
FAQ
What is the maximum safe operating temperature for DMT8008SK3-13?
The junction temperature must not exceed +150°C under any operating condition. With RθJC = 1.1°C/W and typical PCB copper area, case temperature remains below 110°C at 72A continuous current (TC = +70°C rating). Derating curves in Figure 12 confirm single-pulse SOA up to 360A for 1µs.
Does DMT8008SK3-13 require a gate resistor for stability?
A gate resistor is recommended to dampen ringing caused by PCB trace inductance interacting with Ciss (1950pF) and Crss (56pF). For 10V drive with 6Ω source impedance, typical values range from 2.2Ω to 10Ω - verified in the datasheet's switching time test conditions (RG = 6Ω).
Is DMT8008SK3-13 qualified for automotive use?
While not pre-certified to AEC-Q101, the device is manufactured in IATF 16949-certified facilities, uses automotive-grade wafer processes, and supports PPAP documentation. Customers may complete AEC-Q101 qualification per their program requirements using Diodes' change-controlled test reports.
How does the body diode performance compare to external Schottky diodes?
The integrated body diode has VSD = 0.8–1.2V and tRR = 43ns, outperforming most 80V Schottky diodes (typically 0.7–0.9V but with no reverse recovery spec) in hard-switched freewheeling. Its QRR = 49nC is lower than comparable Si diodes, reducing switching loss in synchronous rectification.
DMT8008SK3-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.8mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 34 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1950 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.7W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252 (DPAK)
DMT8008SK3-13 FAQ
1.How can I place an order for DMT8008SK3-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT8008SK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT8008SK3-13 reliable?
The price and inventory of DMT8008SK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT8008SK3-13 is usually 5 days.
3.What payment methods are accepted for DMT8008SK3-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT8008SK3-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT8008SK3-13?
DMT8008SK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT8008SK3-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT8008SK3-13?
For technical support, including DMT8008SK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT8008SK3-13 requirements.
6.How does Aetrix verify that DMT8008SK3-13 is sourced from the original manufacturer or authorized distributors?
All DMT8008SK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT8008SK3-13 meets industry standards.
7.What is the process for return or replacement of DMT8008SK3-13?
All DMT8008SK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT8008SK3-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT8008SK3-13 part is unused and in its original packaging.
Return procedure for DMT8008SK3-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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