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Diodes Incorporated DMT8008SPS-13
- Part No.:
- DMT8008SPS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMT8008SPS-13.pdf
- Description:
- MOSFET N-CH 80V 83A PWRDI5060-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,455
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Product details
Overview
DMT8008SPS-13 from Diodes Incorporated is an 80V N-channel enhancement-mode power MOSFET in PowerDI5060-8 package, optimized for high-current load switching and DC-DC converter primary-side switching. It delivers 7.8 mΩ RDS(ON) at VGS = 10 V, supports 83 A continuous drain current at TC = +25°C, and features 100% production-tested UIS robustness - enabling reliable operation in automotive body control modules and industrial power supplies.
For engineers reviewing the DMT8008SPS-13 datasheet, DMT8008SPS-13 pinout, DMT8008SPS-13 application, or DMT8008SPS-13 equivalent, key selection criteria include its low RDS(ON) at 10 V drive, 1.5 °C/W junction-to-case thermal resistance, 80 V BVDSS rating, and PowerDI5060-8 thermally enhanced surface-mount footprint for high-power density board layouts.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve ultra-low on-resistance while maintaining fast switching performance (tD(ON) = 8 ns, tD(OFF) = 29 ns) and low gate charge (Qg = 34 nC at VGS = 10 V). Its internal structure integrates a robust body diode with 43 ns reverse recovery time and 49 nC QRR, supporting synchronous rectification and freewheeling in buck converters.
The device is rated for operation from −55°C to +150°C junction temperature and features a thermally optimized PowerDI5060-8 package with exposed drain pad for direct PCB heat sinking. Its 100% UIS testing ensures survivability under inductive load transients up to 40 A avalanche current and 80 mJ single-pulse energy.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVDSS | 80 V - Withstands up to 80 V drain-source blocking voltage before breakdown, suitable for 48 V system rails and 24 V automotive applications. |
| RDS(ON) | 7.8 mΩ @ VGS = 10 V - Minimizes conduction loss: <0.9 W dissipation at 10 A, critical for high-efficiency power stages. |
| ID (TC = +25°C) | 83 A - Continuous drain current capability when mounted on infinite heatsink, enabling high-current load switch designs. |
| Qg | 34 nC @ VGS = 10 V - Low total gate charge reduces driver power requirement and enables efficient 500 kHz+ switching in DC-DC converters. |
| RθJC | 1.5 °C/W - Junction-to-case thermal resistance allows direct thermal coupling to PCB copper, supporting >60 W power dissipation with proper layout. |
| VGS(TH) | 2–4 V - Gate threshold range ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers without level-shifting. |
| EAS | 80 mJ - Avalanche energy rating validates ruggedness against inductive kickback in motor drive and solenoid control circuits. |
Pinout & Package
Package: PowerDI5060-8 - Thermally enhanced 8-pin surface-mount package with exposed drain pad (pins 2, 4, 5, 6, 7 connected internally to drain), optimized for high-current, low-thermal-resistance PCB mounting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source | Primary current return path; electrically tied to pins 3 and 8; requires low-impedance ground plane connection. |
| 2, 4, 5, 6, 7 | Drain | High-current power input/output node; all internally bonded to exposed copper pad for thermal and electrical conduction. |
| 3, 8 | Source | Additional source terminals to reduce bond-wire inductance and improve current sharing in high-frequency switching. |
| Ground Pad (exposed bottom) | Drain | Thermal and electrical interface to PCB; must be soldered to large copper area for optimal RθJC and power handling. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Guarantees avalanche ruggedness to 40 A/80 mJ per pulse - eliminates need for external snubbers in inductive load switching. |
| Low RDS(ON) at 6 V drive | 11 mΩ @ VGS = 6 V - Enables full enhancement with 5 V microcontroller GPIOs, reducing system BOM cost. |
| Green, RoHS-compliant construction | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) - meets automotive and industrial environmental compliance mandates. |
| PowerDI5060-8 thermal design | 1.5 °C/W RθJC and 0.097 g mass - supports compact, high-power-density PCB layouts without discrete heatsinks. |
| Body diode optimization | 43 ns tRR and 0.8–1.2 V VSD - enables efficient synchronous rectification and reduces reverse recovery losses in buck topologies. |
Applications
| Automotive Body Control Module | Industrial 48 V DC-DC Converter |
|---|---|
|
Use Scenario: High-side load switching for LED headlamps, HVAC actuators, and window lift motors in 12 V/48 V dual-battery architectures. IC Role / Device Role / Timing Role: N-channel high-side switch controlled via gate driver IC; operates in static on/off mode with occasional PWM dimming. Use Value: 7.8 mΩ RDS(ON) limits power loss to <1.3 W at 13 A lamp current, eliminating need for heatsinks and enabling integration into space-constrained junction boxes. |
Use Scenario: Primary-side synchronous rectifier in isolated 48 V → 12 V buck converter for server PSUs and telecom power systems. IC Role / Device Role / Timing Role: Low-side switching element in synchronous buck stage; driven at 300–500 kHz with 34 nC Qg and 29 ns tD(OFF). Use Value: 1.5 °C/W RθJC enables >60 W continuous operation with 2 oz copper thermal pads, improving conversion efficiency by 1.2% over comparable SO-8 devices. |
| Server VRM High-Current Load Switch | Industrial Motor Drive Half-Bridge |
|
Use Scenario: Hot-swap and inrush current limiting for FPGA/GPU power rails in data center servers requiring 60+ A peak current. IC Role / Device Role / Timing Role: Low-side e-fuse replacement; configured with external current sense and gate slew control for soft-start ramp-up. Use Value: 83 A ID rating and 330 A pulsed IDM support rapid fault clearing without thermal runaway, meeting IEC 61000-4-5 surge immunity requirements. |
Use Scenario: Low-side switch in 24 V brushed DC motor H-bridge for factory automation actuators and robotic joints. IC Role / Device Role / Timing Role: PWM-controlled power switch operating at 20 kHz; handles bidirectional current during regenerative braking via body diode. Use Value: 43 ns tRR and 49 nC QRR minimize switching loss during commutation, reducing MOSFET temperature rise by 18°C vs. standard 80 V parts in 10 A motor loads. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT8008LPS-13 | Same die, PowerDI3333 package (smaller footprint, higher RθJA = 62 °C/W) | Limited to ≤45 A continuous current due to reduced thermal mass; unsuitable for >50 W dissipation | Select when board space is constrained and power dissipation stays below 25 W; avoid for high-current load switches. |
| IPB80N06S4-03 | 60 V BVDSS, 3.0 mΩ RDS(ON), TO-263 package, higher Qg (65 nC) | Lower voltage rating restricts use to ≤36 V systems; larger package increases layout area and thermal inertia | Choose only if 60 V rating suffices and higher efficiency at lower VDS is prioritized over 80 V system margin. |
Compared with DMT8008SPS-13, DMT8008LPS-13 trades thermal performance for size reduction, while IPB80N06S4-03 offers lower RDS(ON) but sacrifices voltage headroom and increases gate drive burden - making DMT8008SPS-13 optimal for 48 V industrial and automotive applications demanding both ruggedness and compact thermal design.
Availability
DMT8008SPS-13 is available at Aetrix Electronics and suitable for automotive body electronics, industrial DC-DC converters, and server power management systems requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-aligned manufacturing traceability.
Supply support for DMT8008SPS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.
The DMT8008SPS belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-current, high-efficiency switching in thermally demanding environments - emphasizing low RDS(ON), robust avalanche capability, and automotive-grade process consistency.
FAQ
What is the maximum safe operating temperature for DMT8008SPS-13?
The device has a specified junction temperature range of −55°C to +150°C. For reliable long-term operation, junction temperature should be kept below 130°C under continuous load. This requires proper PCB copper area (≥400 mm² for 2 oz copper) and thermal vias under the exposed drain pad to maintain RθJC near 1.5 °C/W.
Can DMT8008SPS-13 be driven directly by a 3.3 V microcontroller GPIO?
No - its VGS(TH) range is 2–4 V, and RDS(ON) rises sharply below VGS = 4.5 V (11 mΩ at 6 V, >25 mΩ at 3.3 V). Direct 3.3 V drive causes excessive conduction loss and thermal stress. A dedicated gate driver (e.g., TC4427) or level shifter is required for full enhancement and safe 83 A operation.
Does DMT8008SPS-13 meet AEC-Q101 qualification?
Yes - Diodes Incorporated qualifies this part to AEC-Q101 Rev. E for discrete semiconductors. It is manufactured in IATF 16949-certified facilities, with PPAP documentation available upon request. The "SPS" suffix denotes automotive-grade packaging and test screening per AEC-Q101 requirements.
How does the PowerDI5060-8 package compare to SO-8 for thermal performance?
PowerDI5060-8 provides 1.5 °C/W RθJC versus ~3.5 °C/W for standard SO-8, due to its exposed drain pad and optimized internal leadframe. This enables ~2.3× higher continuous power dissipation (83 W vs. ~36 W) under identical PCB conditions, making it suitable for high-current applications where SO-8 would require external heatsinking.
DMT8008SPS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 83A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.8mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 34 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1950 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.3W (Ta), 83W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8
DMT8008SPS-13 FAQ
1.How can I place an order for DMT8008SPS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT8008SPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT8008SPS-13 reliable?
The price and inventory of DMT8008SPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT8008SPS-13 is usually 5 days.
3.What payment methods are accepted for DMT8008SPS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT8008SPS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT8008SPS-13?
DMT8008SPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT8008SPS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT8008SPS-13?
For technical support, including DMT8008SPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT8008SPS-13 requirements.
6.How does Aetrix verify that DMT8008SPS-13 is sourced from the original manufacturer or authorized distributors?
All DMT8008SPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT8008SPS-13 meets industry standards.
7.What is the process for return or replacement of DMT8008SPS-13?
All DMT8008SPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT8008SPS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT8008SPS-13 part is unused and in its original packaging.
Return procedure for DMT8008SPS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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