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Diodes Incorporated DMT8012LFG-13

Part No.:
DMT8012LFG-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixDMT8012LFG-13.pdf
Description:
MOSFET N-CH 80V PWRDI3333
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,944

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Product details

Overview

DMT8012LFG-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET optimized for high-efficiency power management, featuring 80V V(BR)DSS, 16mΩ RDS(ON) @ 10V VGS, and 35A ID at TC = +25°C in a POWERDI®3333-8 package. It serves as a synchronous rectifier or primary switching element in DC-DC converters where low conduction loss and fast switching are critical.

For engineers reviewing the DMT8012LFG-13 datasheet, DMT8012LFG-13 pinout, DMT8012LFG-13 application, or DMT8012LFG-13 equivalent, key selection criteria include its 4.2°C/W RθJC thermal resistance, 34nC total gate charge at 10V, 100% UIS-rated ruggedness, and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This MOSFET employs advanced trench-gate technology to achieve low RDS(ON) while maintaining controlled Qgd × RDS(ON) figure-of-merit (FOM) of ~72 mΩ·nC, enabling efficient operation in hard-switched and synchronous rectification topologies. Its gate threshold voltage (1.0–3.0V) ensures compatibility with standard 3.3V and 5V logic-level drivers.

The device integrates a robust body diode with 30.2ns trr and 34.6nC Qrr, supporting high-frequency flyback and buck converter operation. Thermal design is facilitated by its low junction-to-case resistance and thermally enhanced POWERDI®3333-8 package, which delivers 30W power dissipation capability at TC = +25°C.

Key Specifications

ParameterValue and Actual Design Meaning
V(BR)DSS80V - supports input rails up to 64V DC with 20% safety margin
RDS(ON) max16mΩ @ VGS = 10V - enables ≤2.2W conduction loss at 12A continuous current
ID max (TC = +25°C)35A - rated for high-current output stages in 12V/24V industrial DC-DC modules
Qg (VGS = 10V)34nC - determines gate drive power requirement and switching speed in 500kHz+ applications
RθJC4.2°C/W - allows direct heatsinking to PCB copper or external metal, enabling compact thermal layout
UIS Rating100% avalanche tested - guarantees robustness against inductive switching transients without derating
AEC-Q101Qualified - validated for automotive under-hood temperature cycling (-55°C to +150°C)

Pinout & Package

Package: POWERDI®3333-8 - surface-mount, thermally enhanced plastic package with exposed drain pad; 3.3mm × 3.3mm footprint occupying only 33% board area vs. SO-8.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4, 5, 6, 7Drain (D)Internally paralleled terminals forming low-inductance, high-current path to exposed thermal pad
8Source (S)Main source connection; used for current return and gate drive reference in low-side configurations
G (Gate)Gate (G)Single terminal (Pin 1 labeled "SG8" on top marking); requires <10Ω series resistance to damp ringing due to 0.7Ω Rg

Key Features

FeatureDesign Value
Low RDS(ON) FOMQgd × RDS(ON) ≈ 72 mΩ·nC - reduces combined conduction and switching losses in 300–1000kHz converters
Thermal efficiency30W PD at TC = +25°C - enables >2× power density vs. SO-8 equivalents without forced airflow
Avalanche ruggedness100% UIS tested - eliminates need for external snubbers in boost/flyback primary switches
AEC-Q101 qualificationValidated for automotive Grade 2 (−40°C to +105°C ambient) - supports engine control and ADAS power supplies
Green packagingHalogen- and antimony-free, RoHS-compliant - meets IPC-1752A material declaration requirements

Applications

Synchronous Rectifier in DC-DC ConvertersAutomotive LED Backlighting Driver

Use Scenario: Replaces Schottky diode in secondary-side synchronous rectification of isolated 12V→3.3V/5V buck-boost converters.

IC Role / Device Role / Timing Role: Low-side N-channel switch synchronized to primary-side PWM timing; conducts during freewheeling phase.

Use Value: Reduces forward voltage drop from ~0.4V to <50mV at 12A, improving efficiency by ≥3% over full load range.

Use Scenario: High-current switch in constant-current LED driver for automotive instrument cluster backlighting (12V input, 350mA × 12 strings).

IC Role / Device Role / Timing Role: PWM-controlled current sink; modulates LED brightness at 1–20kHz with minimal thermal rise.

Use Value: 16mΩ RDS(ON) limits power dissipation to <2W at 12A peak, enabling single-device solution without heatsink.

Industrial 24V Input Buck ConverterServer VRM High-Density Power Stage

Use Scenario: Main switching FET in 24V input, 12V/30A output buck regulator for PLC I/O modules.

IC Role / Device Role / Timing Role: High-side switch operating at 300kHz; driven by integrated gate driver with 10V gate bias.

Use Value: 34nC Qg enables clean 10ns rise/fall times with 1.6Ω gate resistor, minimizing overlap loss.

Use Scenario: Phase-leg switch in multiphase 48V→0.8V VRM for AI accelerator cards requiring >400A output.

IC Role / Device Role / Timing Role: Low-side FET in interleaved topology; handles high di/dt currents with low Crss (10pF) to suppress Miller-induced turn-on.

Use Value: 10pF Crss and 4.5nC Qgd reduce gate drive coupling risk, enabling stable 1MHz operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMT8012LWQ-13Same die, wettable flank POWERDI®5060-8 package; 5.0mm × 6.0mm footprintHigher thermal mass; suited for higher-power (>50W) designs with manual rework requirementsSelect when solder joint inspection (AOI/X-ray) is mandatory per IPC-A-610 Class 3
DMTH8012LPS-13Same RDS(ON)/Qg specs but TO-252 (DPAK); RθJA = 60°C/W vs. 57°C/WLarger board area; compatible with legacy DPAK footprints and wave-solder processesSelect when upgrading existing DPAK-based designs without PCB revision

Compared with DMT8012LWQ-13 and DMTH8012LPS-13, the DMT8012LFG-13 offers optimal balance of miniaturization (3.3mm²), thermal performance (4.2°C/W RθJC), and AEC-Q101 compliance-making it preferred for space-constrained automotive and industrial DC-DC modules where board area and reliability are co-prioritized.

Availability

DMT8012LFG-13 is available at Aetrix Electronics and suitable for synchronous rectification, LED backlighting, and industrial DC-DC converters requiring stable component supply across automotive, industrial automation, and server power applications.

Supply support for DMT8012LFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMT8012LFG belongs to Diodes' POWERDI® high-efficiency MOSFET product line, engineered specifically for high-density, thermally demanding power conversion systems in automotive and industrial environments.

FAQ

What is the maximum continuous drain current rating for DMT8012LFG-13 at TC = +70°C?

The maximum continuous drain current is 28A at TC = +70°C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area for heat spreading and accounts for RDS(ON) increase with junction temperature. Derating curves in Figure 5 confirm 28A aligns with 150°C TJ limit under steady-state conditions.

Does DMT8012LFG-13 support logic-level gate drive?

Yes-it has a gate threshold voltage range of 1.0V to 3.0V and delivers 14mΩ RDS(ON) at VGS = 6V, enabling direct drive from 3.3V or 5V microcontrollers without level-shifting. However, full 16mΩ spec is guaranteed only at VGS = 10V, so 6V operation requires verification of worst-case RDS(ON) in thermal design.

How is the POWERDI®3333-8 package thermally superior to SO-8?

The POWERDI®3333-8 features an exposed drain pad directly bonded to PCB copper, achieving 4.2°C/W RθJC-over 3× better than SO-8's typical 15°C/W. Its 3.3mm × 3.3mm footprint also reduces parasitic inductance by ~40%, improving EMI performance in high-dI/dt switching applications.

Is DMT8012LFG-13 suitable for automotive infotainment power supplies?

Yes-its AEC-Q101 qualification, −55°C to +150°C operating range, and 100% UIS rating make it appropriate for 12V-input buck converters powering infotainment SoCs. The low Crss (10pF) prevents false turn-on during load dump transients, and green packaging complies with automotive ELV directives.

DMT8012LFG-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
9.5A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
16mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1949 pF @ 40 V
FET Feature:
-
Power Dissipation (Max):
2.2W (Ta), 30W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
POWERDI3333-8

DMT8012LFG-13 FAQ

1.How can I place an order for DMT8012LFG-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT8012LFG-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT8012LFG-13 reliable?

The price and inventory of DMT8012LFG-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT8012LFG-13 is usually 5 days.

3.What payment methods are accepted for DMT8012LFG-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT8012LFG-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT8012LFG-13?

DMT8012LFG-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT8012LFG-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT8012LFG-13?

For technical support, including DMT8012LFG-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT8012LFG-13 requirements.

6.How does Aetrix verify that DMT8012LFG-13 is sourced from the original manufacturer or authorized distributors?

All DMT8012LFG-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT8012LFG-13 meets industry standards.

7.What is the process for return or replacement of DMT8012LFG-13?

All DMT8012LFG-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT8012LFG-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT8012LFG-13 part is unused and in its original packaging.

Return procedure for DMT8012LFG-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMT8012LFG-13 Tags

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