Diodes Incorporated DMT8012LFG-7

Overview

DMT8012LFG-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET optimized for high-efficiency power management, featuring 80V V_DS, 16mΩ R_DS(ON) @ 10V_GS, and 35A continuous drain current at T_C = +25°C. It is used in synchronous rectification stages of DC-DC converters and LED backlighting circuits where low conduction loss and fast switching are critical.

For engineers reviewing the DMT8012LFG-7 datasheet, DMT8012LFG-7 pinout, DMT8012LFG-7 application, or DMT8012LFG-7 equivalent, key selection criteria include its 4.2°C/W R_θJC, 100% UIS-rated ruggedness, AEC-Q101 qualification, POWERDI®3333-8 thermally efficient package, and Q_gd × R_DS(ON) figure-of-merit optimized for hard-switched topologies.

Technical Context

This MOSFET employs advanced trench-gate silicon technology to simultaneously reduce R_DS(ON) and gate charge (Q_g = 34nC @ 10V_GS), enabling high-frequency operation in buck and boost converters. Its body diode exhibits t_rr = 30.2ns and Q_rr = 34.6nC, supporting zero-voltage switching (ZVS) assist in resonant topologies.

The device operates across –55°C to +150°C junction temperature range and is fully rated for unclamped inductive switching (UIS) stress. Its gate threshold voltage (V_GS(th) = 1–3V) ensures stable turn-on with standard 5V or 3.3V logic-level drivers without requiring gate boosting.

Key Specifications

Pinout & Package

Package: POWERDI®3333-8 - surface-mount, thermally enhanced 8-pin leadless package with exposed drain paddle; footprint occupies only 33% of SO-8 area while delivering superior thermal performance (R_θJC = 4.2°C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMTH8012LSD-13, DMT8012LFG-7 delivers 40% lower R_θJC and 67% smaller footprint; versus IPB80N06S4-03, it trades 3.0mΩ for 80V capability and surface-mount compatibility-making it optimal for space-constrained 48V automotive and industrial DC-DC designs.

Availability

DMT8012LFG-7 is available at Aetrix Electronics and suitable for synchronous rectifiers, LED backlighting drivers, and automotive body control modules requiring stable component supply and AEC-Q101-compliant sourcing.

Supply support for DMT8012LFG-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMT8012LFG belongs to Diodes' POWERDI® high-current MOSFET product line, engineered specifically for thermally demanding, high-density power conversion in automotive, industrial, and consumer applications.

FAQ

What is the maximum safe operating temperature for DMT8012LFG-7?

The junction temperature must not exceed +150°C under any operating condition. The device is rated for storage and operation from –55°C to +150°C. Thermal design must ensure R_θJC = 4.2°C/W path to PCB copper is maintained, and ambient temperature plus power dissipation (P_D = I_D² × R_DS(ON)) stays within Safe Operating Area (SOA) limits shown in Figure 12 of DS36606.

Can DMT8012LFG-7 be driven directly by a 3.3V microcontroller GPIO?

No-its gate threshold voltage (V_GS(th)) ranges from 1.0V to 3.0V, but full enhancement requires ≥4.5V to achieve rated R_DS(ON). At 3.3V_GS, R_DS(ON) rises significantly (>30mΩ), increasing conduction loss. A dedicated gate driver or level shifter is required for reliable 3.3V logic interfacing.

Is the exposed drain paddle electrically connected to the drain pins?

Yes-the exposed metal paddle on the bottom of the POWERDI®3333-8 package is internally bonded to pins 1–4 (drain terminals). It must be soldered to a large copper pour serving as both electrical connection and primary thermal path. No isolation or floating mounting is permitted.

Does DMT8012LFG-7 support paralleling for higher current capacity?

Yes-its positive temperature coefficient of R_DS(ON) (see Figure 6) ensures inherent current sharing when multiple units are paralleled. However, layout symmetry (matched gate and source inductance) and individual gate resistors (≥1Ω) are mandatory to prevent oscillation and uneven dynamic current distribution during switching transitions.