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Diodes Incorporated DMT8012LK3-13
- Part No.:
- DMT8012LK3-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
DMT8012LK3-13.pdf
- Description:
- MOSFET N-CH 80V 44A TO252
- Quantity:
- Payment:
- Shipping:
Inventory:3,873
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Product details
Overview
DMT8012LK3-13 from Diodes Incorporated is an 80V N-channel enhancement-mode MOSFET in TO252 (DPAK) package, featuring 17 mΩ RDS(ON) @ VGS = 10 V, 44 A continuous drain current at TC = +25°C, and fast switching with 4.9 ns turn-on delay. It serves as a high-efficiency power switch in synchronous rectification stages of DC-DC converters.
For engineers reviewing the DMT8012LK3-13 datasheet, DMT8012LK3-13 pinout, DMT8012LK3-13 application, or DMT8012LK3-13 equivalent, key selection criteria include RDS(ON) at 4.5 V (22 mΩ), thermal resistance RθJC = 2.5 °C/W, body diode recovery charge Qrr = 34.6 nC, and JEDEC-qualified reliability for industrial power management designs.
Technical Context
This MOSFET employs planar trench-gate technology to balance low conduction loss and controlled gate charge (Qg = 34 nC @ 10 V), enabling efficient operation in hard-switched and synchronous buck topologies. Its 10.2 mJ avalanche energy rating supports robustness under transient overvoltage conditions.
The device integrates a low-VSD body diode (0.9–1.2 V @ 25 A) with 30.2 ns reverse-recovery time, optimized for bidirectional current handling in synchronous rectifier configurations where freewheeling path integrity is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 80 V - Withstands up to 80 V drain-source blocking voltage before avalanche onset. |
| RDS(ON) | 17 mΩ @ VGS = 10 V - Enables <1.0 W conduction loss at 12 A, critical for thermal budget in compact DC-DC designs. |
| ID (continuous) | 44 A @ TC = +25°C - Supports high-current output stages without forced airflow when mounted on 1-in² copper pad. |
| Qg | 34 nC @ VGS = 10 V - Determines gate drive power requirement and switching transition time in PWM controllers. |
| RθJC | 2.5 °C/W - Allows direct heatsink mounting to sustain 50 W power dissipation with ≤125°C junction rise above case. |
| Qrr | 34.6 nC - Quantifies stored charge in body diode; lower values reduce switching loss and EMI in synchronous rectifiers. |
| trr | 30.2 ns - Fast reverse recovery minimizes shoot-through risk and improves efficiency in high-frequency (>500 kHz) converters. |
Pinout & Package
Package: TO252 (DPAK), surface-mount, thermally enhanced plastic housing with exposed drain pad for PCB heat transfer. Dimensions per Diodes Inc. outline drawing: D = 6.10 mm, E = 6.58 mm, H = 9.91 mm, L = 1.59 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Low-side reference node; connects to ground or power return path; carries full load current in low-side switch configuration. |
| Pin 2 (Gate) | Control input (G) | High-impedance MOSFET control node; requires 10 V for full enhancement; gate resistance Rg = 0.7 Ω affects switching speed. |
| Pin 3 (Drain) | Power output (D) | Exposed metal pad on bottom surface; electrically and thermally connected to drain; must be soldered to large copper area for thermal management. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) @ 4.5 V | 22 mΩ - Enables 38 A operation with standard logic-level gate drivers (e.g., 3.3 V/5 V microcontrollers). |
| Fast switching speed | tD(ON) = 4.9 ns, tF = 3.5 ns - Reduces transition losses in high-frequency DC-DC converters operating up to 1 MHz. |
| JEDEC-qualified reliability | Qualified per AEC-Q standards for high-reliability applications - Validated for extended temperature cycling and moisture resistance (MSL Level 1). |
| Green packaging | Halogen- and antimony-free, RoHS 3 compliant - Meets environmental compliance requirements for industrial and consumer electronics. |
| Low input capacitance | Ciss = 1949 pF @ VDS = 40 V - Minimizes gate drive current demand and improves noise immunity in noisy power environments. |
Applications
| Synchronous Rectifier in Isolated DC-DC | LED Backlight Power Stage |
|---|---|
|
Use Scenario: Used as secondary-side switch in flyback or forward converters powering telecom/datacom PSUs. IC Role / Device Role / Timing Role: Replaces Schottky diode to reduce conduction loss; operates in synchronous rectification mode synchronized to primary-side controller timing. Use Value: Achieves >95% efficiency at 12 V/20 A output by cutting forward voltage drop from ~0.5 V to <0.1 V during conduction. |
Use Scenario: Drives LED strings in automotive instrument clusters and LCD TV backlight units. IC Role / Device Role / Timing Role: Low-side PWM switch controlling current through constant-current LED driver ICs or inductor-based boost stages. Use Value: Delivers 38 A peak current at 4.5 V gate drive, supporting high-brightness LED arrays while maintaining <1.2 W thermal dissipation at 100 kHz PWM. |
| Industrial DC-DC Point-of-Load Converter | USB-C PD Power Delivery Switch |
|
Use Scenario: High-current step-down regulator supplying FPGA or ASIC core voltage in factory automation controllers. IC Role / Device Role / Timing Role: Main power FET in 400 kHz–1 MHz buck converter; driven by integrated gate driver with adaptive dead-time control. Use Value: 17 mΩ RDS(ON) limits I²R loss to <0.8 W at 20 A, enabling compact 2-layer PCB layout without external heatsink. |
Use Scenario: Bidirectional power path switch in USB-C PD 3.1 EPR (Extended Power Range) adapters rated ≥60 W. IC Role / Device Role / Timing Role: Reverse-polarity protection and load switch; leverages low RDS(ON) and fast trr to handle 5 A–10 A bidirectional current with minimal voltage drop. Use Value: Body diode VSD = 0.9 V and Qrr = 34.6 nC ensure low-loss reverse conduction during cable insertion/removal events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT8012LK3Q-13 | Automotive-grade variant qualified to AEC-Q101; identical electrical specs but with PPAP documentation and IATF 16949 manufacturing traceability. | Required for automotive infotainment or ADAS power rails; not necessary for industrial or consumer use. | Select only if automotive qualification (e.g., change control, lot traceability) is mandated by end-customer requirements. |
| IPB017N10N5ATMA1 | 100 V rating, 1.7 mΩ RDS(ON) @ 10 V, TO263 package; higher current capability (120 A) but larger footprint and higher gate charge (120 nC). | Better suited for high-power server VRMs; excessive performance for 44 A applications, increasing cost and drive complexity. | Choose only when system voltage margin exceeds 80 V or thermal design allows larger package and higher gate drive overhead. |
Compared with DMT8012LK3-13, the Q-suffix variant adds automotive compliance overhead without electrical benefit, while the Infineon part trades size, cost, and drive simplicity for headroom beyond typical 80 V industrial needs.
Availability
DMT8012LK3-13 is available at Aetrix Electronics and suitable for synchronous rectifiers, LED backlight drivers, and industrial DC-DC point-of-load converters requiring stable component supply, JEDEC-qualified reliability, and RoHS 3 compliance.
Supply support for DMT8012LK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.
This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-current switching in industrial and consumer power conversion systems where thermal performance and gate-drive compatibility are critical.
FAQ
What is the maximum safe operating junction temperature for DMT8012LK3-13?
The device is rated for TJ = –55°C to +150°C. Maximum continuous operation occurs at +150°C, validated via transient thermal resistance curves and SOA testing. Derating is required above 100°C ambient when mounted on FR-4 with 1-inch² copper; full 44 A current is only guaranteed at TC = +25°C.
Can DMT8012LK3-13 be driven directly by a 3.3 V microcontroller GPIO?
No - its VGS(TH) range is 1–3 V, but full enhancement requires ≥4.5 V for RDS(ON) ≤22 mΩ. At 3.3 V, RDS(ON) rises significantly (>40 mΩ), increasing conduction loss. A level-shifting gate driver or dedicated MOSFET driver IC is required for reliable 3.3 V logic control.
Does DMT8012LK3-13 have integrated ESD protection on the gate?
Yes - the device includes built-in gate oxide protection rated to ±100 nA IGSS at ±20 V, meeting HBM ESD Class 1C (≥1 kV). However, external gate resistors (≥10 Ω) and TVS clamping are still recommended in high-noise industrial environments to prevent latch-up or overvoltage damage.
Is the TO252 (DPAK) package lead-free and RoHS-compliant?
Yes - the DMT8012LK3-13 uses matte tin annealed over copper leadframe and green molding compound compliant with EU RoHS 3 (2015/863/EU), containing <900 ppm bromine, <900 ppm chlorine, and <1000 ppm antimony, certified per Diodes' internal "Green" definition and UL 94V-0 flammability rating.
DMT8012LK3-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 17mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 34 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1949 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.7W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252-3
DMT8012LK3-13 FAQ
1.How can I place an order for DMT8012LK3-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT8012LK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT8012LK3-13 reliable?
The price and inventory of DMT8012LK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT8012LK3-13 is usually 5 days.
3.What payment methods are accepted for DMT8012LK3-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT8012LK3-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT8012LK3-13?
DMT8012LK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT8012LK3-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT8012LK3-13?
For technical support, including DMT8012LK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT8012LK3-13 requirements.
6.How does Aetrix verify that DMT8012LK3-13 is sourced from the original manufacturer or authorized distributors?
All DMT8012LK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT8012LK3-13 meets industry standards.
7.What is the process for return or replacement of DMT8012LK3-13?
All DMT8012LK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT8012LK3-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT8012LK3-13 part is unused and in its original packaging.
Return procedure for DMT8012LK3-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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