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Diodes Incorporated DMT8012LSS-13
- Part No.:
- DMT8012LSS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMT8012LSS-13.pdf
- Description:
- MOSFET N-CH 80V 9.7A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:789
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Product details
Overview
DMT8012LSS-13 from Diodes Incorporated is an 80V N-channel enhancement-mode MOSFET in SO-8 package, rated for 9.7A continuous drain current at 25°C and featuring 16.5mΩ RDS(ON) at VGS = 10V. It delivers low conduction loss and fast switching for high-efficiency power management in portable electronics.
For engineers reviewing the DMT8012LSS-13 datasheet, DMT8012LSS-13 pinout, DMT8012LSS-13 application, or DMT8012LSS-13 equivalent, key selection criteria include its 80V VDSS, 16.5mΩ/20mΩ RDS(ON) at 10V/4.5V, AEC-Q101 qualification, SO-8 thermal performance (RθJA = 53°C/W with 1-in² copper), and 100% UIS-tested ruggedness.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) while preserving fast switching speed (tD(ON) = 4.9ns, tF = 3.5ns) and low gate charge (QG = 34nC at 10V). Its body diode exhibits VSD = 0.9–1.2V at 20A and supports synchronous rectification in DC-DC converters.
The device is characterized for operation from –55°C to +150°C junction temperature, with RDS(ON) increasing by ~2.5× from 25°C to 150°C at fixed VGS. Thermal resistance is specified for both standard FR-4 (RθJA = 80°C/W) and enhanced layout (RθJA = 53°C/W), enabling accurate thermal design in compact PCBs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 80V - Supports input rails up to 64V DC with 25% margin for transients |
| RDS(ON) @ 10V | 16.5mΩ max - Enables ≤1.6W conduction loss at 9.7A, critical for battery-powered loadswitches |
| RDS(ON) @ 4.5V | 20mΩ max - Ensures robust turn-on with 3.3V or 5V logic-level gate drive |
| ID (continuous) | 9.7A @ 25°C - Sustains full-load current in notebook battery protection circuits |
| EAS | 10.2mJ - Withstands 11.6A avalanche current (L = 0.1mH), essential for inductive load switching |
| QG @ 10V | 34nC - Minimizes gate drive power and enables <100ns total switching transition in 1MHz converters |
| RθJA (enhanced) | 53°C/W - Allows 2W dissipation with ≤106°C rise above ambient on 1-in² copper pad |
Pinout & Package
Package: SO-8 surface-mount plastic package with matte tin–annealed copper leadframe, UL 94V-0 rated, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires ≤±20V bias; 0.7Ω gate resistance limits ringing |
| 2 (S) | Source | Reference node for gate drive; tied to power ground in high-side switch configurations |
| 3 (D) | Drain | High-voltage power path; connected to output rail in loadswitch or buck converter high-side |
| 4 (D) | Drain | Parallel drain connection for reduced package inductance and thermal spreading |
| 5 (D) | Drain | Parallel drain connection - all three drain pins share same internal die connection |
| 6 (D) | Drain | Parallel drain connection - ensures low RDS(ON) and thermal uniformity under high current |
| 7 (S) | Source | Secondary source connection; improves current sharing and reduces source inductance in switching loops |
| 8 (S) | Source | Third source terminal - enhances Kelvin sensing capability and minimizes common-source inductance |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Guarantees reliable operation under unclamped inductive switching stress without derating |
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD (HBM ≥2kV) |
| Low QGD/QGS ratio | 4.5nC/6nC = 0.75 - Reduces Miller effect, enabling stable 10V gate drive without external gate clamping |
| Green compound packaging | Halogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb) - meets IPC-1752A Tier 1 reporting requirements |
| Low Ciss | 1949pF - Limits gate drive current demand and improves efficiency in high-frequency (>500kHz) SMPS |
Applications
| Notebook Battery Protection | DC-DC Buck Converter High-Side Switch |
|---|---|
Use Scenario: Bidirectional overvoltage/overcurrent protection between Li-ion battery pack and system bus in ultrabooks. IC Role / Device Role: N-channel high-side loadswitch controlling main power path with reverse-current blocking. Use Value: 16.5mΩ RDS(ON) limits voltage drop to <160mV at 9.7A, preserving battery runtime and thermal headroom. | Use Scenario: Primary switching element in 12V-to-1.2V synchronous buck converter for CPU core supply. IC Role / Device Role: High-side power MOSFET operating at 1MHz with 4.5V gate drive from integrated controller. Use Value: 20mΩ RDS(ON) at 4.5V and 34nC QG enable >92% efficiency at 10A load with minimal gate driver loss. |
| LED Backlight Loadswitch | Industrial 24V Power Distribution |
Use Scenario: On/off control of white LED strings (up to 20V forward) in laptop display backlight modules. IC Role / Device Role: Low-loss series switch placed between boost converter output and LED cathode return path. Use Value: Fast 3.5ns fall time and 100% UIS rating prevent voltage overshoot during abrupt dimming transitions. | Use Scenario: Hot-swap and fault-isolation switch in programmable logic controller (PLC) I/O module power rail. IC Role / Device Role: Protected 24V distribution switch with current limiting and thermal shutdown coordination. Use Value: AEC-Q101 qualification ensures long-term stability under industrial temperature cycling (–40°C to +85°C ambient). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN6016LFG-7 | 60V VDSS, 16.5mΩ @ 10V, same SO-8 package but lower voltage rating | Not suitable for 64V transient-tolerant designs; limited to ≤48V systems | Select only if input voltage stays below 50V and board space prohibits larger packages |
| SI7157DP-T1-GE3 | 80V VDSS, 18mΩ @ 10V, higher QG (42nC), no AEC-Q101 qualification | Lacks automotive reliability validation; higher gate drive loss in high-frequency operation | Acceptable for cost-sensitive industrial use where AEC-Q101 is not mandated |
Compared with DMT8012LSS-13, DMN6016LFG-7 trades voltage margin for identical RDS(ON) in lower-voltage systems, while SI7157DP-T1-GE3 offers similar voltage rating but sacrifices ruggedness and switching efficiency-making DMT8012LSS-13 optimal for thermally constrained, automotive-qualified, or high-reliability 80V loadswitching.
Availability
DMT8012LSS-13 is available at Aetrix Electronics and suitable for notebook battery management, DC-DC converter high-side switching, and industrial 24V power distribution requiring stable component supply across multi-year production cycles.
Supply support for DMT8012LSS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for computing, industrial, and automotive markets.
The DMT8012LSS belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, low-RDS(ON) switching in portable and space-constrained power systems where thermal performance and ruggedness are critical.
FAQ
What is the maximum safe operating junction temperature for DMT8012LSS-13?
The absolute maximum junction temperature is +150°C per the datasheet. Operation at this limit requires strict thermal design: with RθJA = 53°C/W and ambient at +70°C, maximum allowable power dissipation is 1.5W. Derating curves in Figure 12 confirm single-pulse safe operating area up to 11.6A at 80V for 100µs.
Can DMT8012LSS-13 be used in a synchronous rectifier configuration?
Yes-the device's body diode has VSD = 0.9–1.2V at 20A and trr < 50ns (inferred from fast switching times), making it suitable for synchronous rectification in buck or flyback topologies. However, external gate control is required since it lacks integrated driver circuitry.
Does DMT8012LSS-13 support 3.3V logic-level gate drive?
No-it is not a true logic-level MOSFET. At VGS = 3.3V, RDS(ON) exceeds 45mΩ (extrapolated from Figure 4), resulting in excessive conduction loss. Minimum recommended VGS is 4.5V for reliable 8.8A operation; a gate driver or level shifter is required for 3.3V microcontroller interfaces.
How does the SO-8 package's multiple drain and source pins improve performance?
The three parallel drain pins (pins 3,4,5) and three source pins (pins 2,7,8) reduce package resistance and inductance, improving current sharing, thermal spreading, and high-frequency switching stability. This layout lowers effective RDS(ON) by ~10% versus single-pin equivalents and suppresses voltage spikes during hard switching.
DMT8012LSS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 16.5mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 34 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1949 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMT8012LSS-13 FAQ
1.How can I place an order for DMT8012LSS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT8012LSS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT8012LSS-13 reliable?
The price and inventory of DMT8012LSS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT8012LSS-13 is usually 5 days.
3.What payment methods are accepted for DMT8012LSS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT8012LSS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT8012LSS-13?
DMT8012LSS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT8012LSS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT8012LSS-13?
For technical support, including DMT8012LSS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT8012LSS-13 requirements.
6.How does Aetrix verify that DMT8012LSS-13 is sourced from the original manufacturer or authorized distributors?
All DMT8012LSS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT8012LSS-13 meets industry standards.
7.What is the process for return or replacement of DMT8012LSS-13?
All DMT8012LSS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT8012LSS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT8012LSS-13 part is unused and in its original packaging.
Return procedure for DMT8012LSS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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