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Diodes Incorporated DMT8030LFDF-13
- Part No.:
- DMT8030LFDF-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMT8030LFDF-13.pdf
- Description:
- MOSFET BVDSS: 61V~100V U-DFN2020
- Quantity:
- Payment:
- Shipping:
Inventory:2,195
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Product details
Overview
DMT8030LFDF from Diodes Incorporated is an 80V N-channel enhancement-mode MOSFET in a U-DFN2020-6 package, delivering 25 mΩ RDS(ON) at VGS = 10 V and 7.5 A continuous drain current at TA = +25°C. It features low-profile 0.6 mm height, 4 mm² PCB footprint, and optimized switching performance for high-efficiency power management in space-constrained battery-powered systems.
For engineers reviewing the DMT8030LFDF datasheet, DMT8030LFDF pinout, DMT8030LFDF application, or DMT8030LFDF equivalent, key selection criteria include its 80 V VDSS, 25 mΩ/38 mΩ RDS(ON) at 10 V/4.5 V, thermal resistance of 58 °C/W (with recommended pad layout), and body diode recovery charge QRR = 20.6 nC - critical for synchronous rectification and load-switching reliability.
Technical Context
This MOSFET employs a trench-gate process to achieve low on-resistance while maintaining fast switching characteristics. Its gate threshold voltage range (1.2–2.5 V) enables robust turn-on with standard logic-level drivers, and its Crss of 32 pF supports stable operation in high-frequency DC-DC converters.
The device integrates a low-VSD body diode (0.7–1.2 V at 10 A) with tRR = 25.5 ns and QRR = 20.6 nC, reducing switching losses in bidirectional current paths. Thermal design is supported by RθJC = 6.7 °C/W and RθJA = 58 °C/W under optimized FR-4 layout conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 80 V - Supports input rails up to 64 V DC with 20% safety margin for transient overvoltage handling. |
| RDS(ON) | 25 mΩ @ VGS = 10 V - Enables ≤1.88 W conduction loss at 7.5 A, suitable for compact 5–12 V load switches. |
| ID (max) | 7.5 A @ TA = +25°C - Sustains continuous current in portable power rails with minimal derating up to +70°C. |
| Qg | 10.4 nC @ VGS = 10 V - Low gate charge reduces driver power demand and enables efficient 1–2 MHz switching in buck controllers. |
| tRR | 25.5 ns - Fast body diode recovery minimizes shoot-through risk and improves efficiency in half-bridge topologies. |
| RθJA | 58 °C/W - Achievable with minimum recommended copper pad layout; enables 1.2 W dissipation at ambient +70°C. |
| VGS(TH) | 1.2–2.5 V - Ensures reliable turn-on with 3.3 V or 5 V microcontroller GPIOs without level-shifting circuitry. |
Pinout & Package
Package: U-DFN2020-6 (Type F), 2.0 × 2.0 × 0.6 mm, thermally enhanced leadframe with NiPdAu plating. Exposed drain pad (Pin 1) occupies center-bottom position for optimal heat transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Drain) | Main power path output / Heat sink interface | Exposed copper pad - must be soldered to large PCB copper area for thermal management and current return path. |
| Pin 2 (Source) | Power return reference / Gate drive reference | Low-inductance source connection essential for stable switching; ties directly to ground plane near driver IC. |
| Pin 3 (Gate) | Control input | High-impedance node requiring short trace routing and local 100 nF decoupling to suppress ringing during fast transitions. |
| Pins 4–6 (Source) | Parallel source terminals | Multiple source pins reduce package inductance and improve current sharing; all must be connected to same ground net. |
Key Features
| Feature | Design Value |
|---|---|
| 0.6 mm profile | Enables use in ultra-thin consumer electronics (e.g., wearables, hearing aids) where Z-height is constrained to <1.0 mm. |
| 4 mm² PCB footprint | Reduces board area by >50% vs. SO-8 or PowerPAK® 1212-8, supporting dense multi-MOSFET power stages in portable chargers. |
| Lead-free & halogen-free | Complies with RoHS 3 (2015/863/EU) and IEC 61249-2-21; eliminates Br/Cl/antimony compounds (<900 ppm Br, <900 ppm Cl, <1000 ppm Sb). |
| Moisture sensitivity Level 1 | Eliminates baking requirement prior to reflow; compatible with standard J-STD-020-compliant assembly processes. |
Applications
| Battery-Powered Load Switch | LED Backlight Driver |
|---|---|
Use Scenario: Power sequencing and fault-isolation for Li-ion battery outputs in handheld medical devices. IC Role / Device Role / Timing Role: High-side load switch controlling 5 V system rail; activated/deactivated by MCU GPIO with soft-start via gate resistor. Use Value: 25 mΩ RDS(ON) limits dropout to <188 mV at 7.5 A, preserving battery runtime; 0.6 mm height fits within 3 mm chassis clearance. |
Use Scenario: PWM dimming control for 3–5 string white LED arrays in automotive instrument clusters. IC Role / Device Role / Timing Role: Low-side constant-current switch operating at 1–2 kHz PWM frequency; synchronized to display refresh timing. Use Value: 32 pF Crss and 10.4 nC Qg enable clean edge transitions with minimal EMI; 25.5 ns tRR prevents LED current overshoot during duty-cycle changes. |
| Solid-State Relay Replacement | USB-C Power Delivery Switch |
Use Scenario: Replacing electromechanical relays in industrial sensor interface modules requiring >100 k-cycle lifetime. IC Role / Device Role / Timing Role: Bidirectional switching element handling 24 V DC loads up to 6 A; body diode conducts reverse current during polarity reversal. Use Value: 20.6 nC QRR and 1.2 V VSD minimize energy loss per switching event; 80 V VDSS accommodates 24 V transients per IEC 61000-4-5. |
Use Scenario: VBUS path switch in USB-C PD 3.0 sink applications supporting 20 V/5 A (100 W) power negotiation. IC Role / Device Role / Timing Role: Dual-function switch managing both forward (source-to-sink) and reverse (sink-to-source) current flow during DRP role swaps. Use Value: Symmetrical RDS(ON) (25 mΩ) and low QRR ensure consistent thermal behavior regardless of current direction; U-DFN2020-6 footprint matches USB-C port density constraints. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3020LFG-7 | 30 V VDSS, 20 mΩ RDS(ON) @ 10 V, same U-DFN2020-6 package | Lower voltage rating restricts use to ≤24 V systems; higher current density increases thermal stress at 7.5 A | Select only when VIN ≤ 24 V and board layout allows tighter thermal management. |
| DMT6006LPS-13 | 60 V VDSS, 6.5 mΩ RDS(ON) @ 10 V, larger PowerDI™ 3333 package (3.3 × 3.3 mm) | Higher RθJA (70 °C/W) and larger footprint limit use in ultra-compact designs | Prefer for higher-current (>10 A), lower-RDS(ON) needs where board space permits larger package. |
Compared with DMT3020LFG-7 and DMT6006LPS-13, DMT8030LFDF uniquely balances 80 V capability, 25 mΩ on-resistance, and 0.6 mm profile - making it the only option meeting all three requirements in sub-2 mm² footprints for 48 V nominal systems.
Availability
DMT8030LFDF is available at Aetrix Electronics and suitable for battery-operated load switching, LED backlight control, solid-state relay replacement, and USB-C power delivery applications requiring stable component supply and long-term manufacturability.
Supply support for DMT8030LFDF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This MOSFET belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, space-constrained power conversion and load management in portable, industrial, and automotive-qualified systems.
FAQ
What is the maximum safe operating junction temperature for DMT8030LFDF?
The absolute maximum junction temperature is +150°C, and the device is rated for continuous operation across –55°C to +150°C. Derating begins at +70°C ambient, where continuous drain current drops to 6.1 A and power dissipation falls to 1.4 W under recommended PCB layout conditions.
Can DMT8030LFDF be driven directly by a 3.3 V microcontroller GPIO?
Yes - its gate threshold voltage range (1.2–2.5 V) ensures full enhancement at 3.3 V, and RDS(ON) remains 38 mΩ at VGS = 4.5 V. For optimal efficiency, use a gate resistor ≤10 Ω and local 100 nF decoupling to manage 10.4 nC total gate charge.
Does DMT8030LFDF meet automotive qualification standards?
No - this part is not AEC-Q101 qualified. Diodes offers automotive-grade variants (e.g., DMT8030LFDQ) with PPAP documentation, IATF 16949 manufacturing, and extended temperature screening. Contact Diodes or Aetrix for qualified alternatives.
How does the U-DFN2020-6 package affect thermal performance compared to SO-8?
The U-DFN2020-6 achieves RθJA = 58 °C/W with proper pad layout - ~3× better than typical SO-8 (≈170 °C/W) - due to direct die-to-PCB thermal path via exposed drain. However, it requires precise stencil design and reflow profiling to avoid voiding under the thermal pad.
DMT8030LFDF-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10.4 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 641 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMT8030LFDF-13 FAQ
1.How can I place an order for DMT8030LFDF-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT8030LFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT8030LFDF-13 reliable?
The price and inventory of DMT8030LFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT8030LFDF-13 is usually 5 days.
3.What payment methods are accepted for DMT8030LFDF-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT8030LFDF-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT8030LFDF-13?
DMT8030LFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT8030LFDF-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT8030LFDF-13?
For technical support, including DMT8030LFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT8030LFDF-13 requirements.
6.How does Aetrix verify that DMT8030LFDF-13 is sourced from the original manufacturer or authorized distributors?
All DMT8030LFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT8030LFDF-13 meets industry standards.
7.What is the process for return or replacement of DMT8030LFDF-13?
All DMT8030LFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT8030LFDF-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT8030LFDF-13 part is unused and in its original packaging.
Return procedure for DMT8030LFDF-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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