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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT8030LFDF-7

Name: DMT8030LFDF-7
Brand: Diodes Incorporated
SKU: DMT8030LFDF-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT8030LFDF-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 6-UDFN Exposed Pad

Datasheet:: DMT8030LFDF-7.pdf

Description:: MOSFET BVDSS: 61V~100V U-DFN2020

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Product details

Overview

DMT8030LFDF from Diodes Incorporated is an 80V N-channel enhancement-mode MOSFET in a U-DFN2020-6 package, delivering 25 mΩ R_DS(ON) at V_GS = 10 V and 7.5 A continuous drain current at T_A = +25°C. It serves as a low-profile power switch in battery-operated systems, solid-state relays, and load drivers for lamps, solenoids, and displays.

For engineers reviewing the DMT8030LFDF datasheet, DMT8030LFDF pinout, DMT8030LFDF application, or DMT8030LFDF equivalent, key selection criteria include its 25 mΩ on-resistance at 10 V gate drive, 0.6 mm profile, 4 mm² PCB footprint, and AEC-Q101 readiness for automotive-grade reliability assessment.

Technical Context

This MOSFET employs a trench-gate process optimized for low R_DS(ON) while preserving fast switching performance: t_D(ON) = 11.3 ns, t_R = 14.3 ns, and Q_g = 10.4 nC at V_GS = 10 V. Its body diode exhibits t_RR = 25.5 ns and Q_RR = 20.6 nC under 100 A/μs di/dt, supporting synchronous rectification and inductive load control.

The device operates across –55°C to +150°C junction temperature, with R_θJA = 103°C/W (min pad) and 58°C/W (1-inch² copper), enabling thermal design flexibility in space-constrained DC-DC and motor-drive stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	80 V - supports 48 V nominal bus systems with 25% headroom for transients
R_DS(ON) @ V_GS = 10 V	25 mΩ max - enables ≤1.9 W conduction loss at 7.5 A, critical for thermally limited PCB layouts
I_D Continuous @ 25°C	7.5 A - rated for sustained switching in portable power rails and LED drivers
Q_g @ V_GS = 10 V	10.4 nC - determines gate driver strength requirement for <20 ns turn-on in high-frequency SMPS
T_J Range	–55°C to +150°C - qualified for under-hood automotive and industrial ambient environments
Package	U-DFN2020-6 - 2.0 × 2.0 × 0.6 mm footprint with exposed drain pad for thermal relief
V_GS(TH)	1.2–2.5 V - ensures reliable turn-on with 3.3 V logic-level microcontrollers

Pinout & Package

U-DFN2020-6 (Type F) is a 6-terminal leadless package with an exposed drain pad (Pin 6). The top-side marking "83" identifies the product type; "YWX" denotes date code (e.g., Y=2024, W=week, X=day).

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control input; requires ≥10 V for full enhancement, compatible with 3.3 V/5 V logic via gate driver
2	Source	Return path for load current; tied to ground or low-side reference in high-side configurations
3	Drain	Main power output node; electrically connected to exposed thermal pad (Pin 6) for heat dissipation
4	Source	Second source terminal-bond-wire parallel to Pin 2 to reduce source inductance in high-dI/dt switching
5	Gate	Redundant gate connection-used to minimize gate loop inductance and improve EMI performance
6	Drain (Exposed Pad)	Primary thermal interface; must be soldered to large copper pour for R_θJA = 58°C/W operation

Key Features

Feature	Design Value
0.6 mm profile	Enables stacking in ultra-thin battery packs and wearable electronics without mechanical interference
4 mm² PCB footprint	Reduces board area by >50% vs. SO-8, easing layout in compact USB-C PD adapters and IoT sensor nodes
23.8 mΩ typical R_DS(ON)	Delivers 94% efficiency in 5 V → 3.3 V buck converters at 5 A, minimizing thermal derating
Lead-free & halogen-free	Meets IPC-J-STD-020 Level 1 moisture sensitivity and RoHS 3 (2015/863/EU) compliance out-of-box
AEC-Q101 qualified	Validated for automotive power management per stress test requirements including HTGB, HTRB, and UIS

Applications

Battery-Powered Motor Control

Solid-State Relay Replacement

Use Scenario: Driving 12 V brushed DC motors in cordless power tools with PWM at 20 kHz.

IC Role / Device Role / Timing Role: Low-side switch controlling motor current path; handles 6.1 A continuous at 70°C ambient.

Use Value: 25 mΩ R_DS(ON) limits I²R loss to 0.92 W, eliminating need for heatsink in handheld enclosure.

Use Scenario: Replacing electromechanical relays in HVAC zone actuators with zero-crossing-compatible switching.

IC Role / Device Role / Timing Role: Bidirectional load switch using internal body diode; supports 7.5 A resistive load at 24 VAC RMS.

Use Value: 25.5 ns reverse-recovery time enables clean turn-off without voltage spikes, reducing snubber component count.

USB-C Power Delivery Switch

LED Backlight Driver

Use Scenario: Input power path management in portable monitors accepting 20 V/5 A USB-C PD input.

IC Role / Device Role / Timing Role: High-side protection switch placed between connector and buck controller; withstands 80 V surge events.

Use Value: 80 V V_DSS provides margin against IEC 61000-4-5 Level 3 surges (1 kV line-earth), avoiding external TVS.

Use Scenario: Constant-current dimming of 48 V LED strings in smart signage with 100 Hz PWM.

IC Role / Device Role / Timing Role: Low-side current sink modulating LED string return path; switches at 100 Hz with <10 ns jitter.

Use Value: 38 mΩ R_DS(ON) at 4.5 V gate drive allows direct MCU GPIO control, eliminating level-shifter IC.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3020LFG-7	30 V V_DSS, 20 mΩ @ 4.5 V, same U-DFN2020-6 package	Limited to ≤36 V systems; higher R_DS(ON) at 80 V bias due to lower breakdown rating	Select when operating below 30 V and prioritizing lowest possible on-resistance at logic-level drive
DMT6006LPS-13	60 V V_DSS, 6.2 mΩ @ 10 V, SO-8 package, 3× larger footprint	Higher thermal mass but requires 2.5× more PCB area; better for high-power, low-frequency use cases	Choose when system-level thermal budget exceeds 2.2 W and board space permits SO-8 mounting

Compared with DMT8030LFDF, DMN3020LFG-7 trades voltage headroom for lower R_DS(ON) in sub-30 V rails, while DMT6006LPS-13 sacrifices miniaturization for higher current handling and easier thermal management in non-portable equipment.

Availability

DMT8030LFDF is available at Aetrix Electronics and suitable for battery-powered motor control, solid-state relay replacement, and USB-C power delivery switching requiring stable component supply across industrial and automotive design cycles.

Supply support for DMT8030LFDF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in ASE, J-Devices, and its own facilities.

This MOSFET belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, space-constrained power conversion and load-switching applications in portable, automotive, and industrial systems.

FAQ

What is the maximum safe operating voltage for DMT8030LFDF in continuous DC applications?

The absolute maximum drain-source voltage is 80 V DC, verified per JEDEC JESD78. Operation above 64 V requires derating per Figure 12 SOA curves; at 75 V, continuous current must be limited to ≤3.2 A at T_A = +70°C to avoid exceeding R_DS(ON)-limited power dissipation.

Can DMT8030LFDF be driven directly by a 3.3 V microcontroller GPIO without a gate driver?

Yes-its V_GS(TH) range (1.2–2.5 V) ensures turn-on, but R_DS(ON) rises to 38 mΩ at V_GS = 4.5 V. For 7.5 A loads, this increases conduction loss by 62% versus 10 V drive; use only in low-current (<2 A) or thermally forgiving applications.

How is thermal performance affected when the exposed drain pad is not soldered to PCB copper?

Omitting thermal pad connection degrades R_θJA from 58°C/W to 103°C/W. At 7.5 A and 25 mΩ, junction temperature rises from 92°C to 158°C-exceeding the 150°C limit. Full-solder coverage of the 2.0 × 2.0 mm pad is mandatory for rated current operation.

Does DMT8030LFDF support avalanche energy handling in inductive switching applications?

Yes-it is rated for 12.5 A single-pulse avalanche current and 23.4 mJ avalanche energy (L = 0.3 mH), validated per JEDEC JESD24-1. This supports unclamped inductive switching in relay drivers and solenoid controls without external snubbers under defined test conditions.

DMT8030LFDF-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 7.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 641 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.2W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: U-DFN2020-6 (Type F)

DMT8030LFDF-7 FAQ

1.How can I place an order for DMT8030LFDF-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT8030LFDF-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT8030LFDF-7 reliable?

The price and inventory of DMT8030LFDF-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT8030LFDF-7 is usually 5 days.

3.What payment methods are accepted for DMT8030LFDF-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT8030LFDF-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT8030LFDF-7?

DMT8030LFDF-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT8030LFDF-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT8030LFDF-7?

For technical support, including DMT8030LFDF-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT8030LFDF-7 requirements.

6.How does Aetrix verify that DMT8030LFDF-7 is sourced from the original manufacturer or authorized distributors?

All DMT8030LFDF-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT8030LFDF-7 meets industry standards.

7.What is the process for return or replacement of DMT8030LFDF-7?

All DMT8030LFDF-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT8030LFDF-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT8030LFDF-7 part is unused and in its original packaging.

Return procedure for DMT8030LFDF-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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