Diodes Incorporated DMTH10H003SPSW-13

Overview

DMTH10H003SPSW from Diodes Incorporated is a 100V, N-channel enhancement-mode MOSFET in PowerDI®5060-8/SWP package, rated for continuous drain current of 166A at TC = +25°C, with R_DS(ON) = 3 mΩ @ V_GS = 10V and operating junction temperature up to +175°C. It is engineered for high-efficiency power conversion in automotive engine management and body control modules.

For engineers reviewing the DMTH10H003SPSW datasheet, DMTH10H003SPSW pinout, DMTH10H003SPSW application, or DMTH10H003SPSW equivalent, key selection criteria include its low R_DS(ON), robust UIS rating (20.2A/612mJ), wettable flank package for automated optical inspection, and AEC-Q101 qualification readiness for under-hood automotive use.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss while maintaining fast switching performance (t_D(ON) = 16.0 ns, t_F = 29.6 ns) and low gate charge (Q_g = 85.0 nC). Its thermal resistance R_θJC = 0.9°C/W enables high-power operation when mounted on a heatsink via the exposed drain pad.

The device integrates a robust body diode with t_RR = 71.7 ns and Q_RR = 163.1 nC, supporting synchronous rectification and hard-switched topologies. Its ±20V gate-source voltage rating and 2.6V–4.0V gate threshold (V_GS(TH)) ensure compatibility with standard 3.3V/5V/10V gate drivers.

Key Specifications

Pinout & Package

Package: PowerDI®5060-8/SWP (Type Q), surface-mount, thermally enhanced with exposed drain pad. Wettable flank terminals enable automated optical solder-joint inspection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IXTH110N10L2 and STL220N6LF8AG, DMTH10H003SPSW uniquely combines 100V rating, 3 mΩ R_DS(ON), wettable flank inspection capability, and AEC-Q101 readiness in a thermally efficient 8-pin PowerDI package-making it optimal for production automotive power stages requiring both reliability and manufacturability.

Availability

DMTH10H003SPSW is available at Aetrix Electronics and suitable for engine management systems, body control modules, and 48V mild hybrid DC-DC converters requiring stable component supply across extended temperature and high-reliability automotive programs.

Supply support for DMTH10H003SPSW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' Automotive Power MOSFET product line, developed specifically for high-temperature, high-current automotive power switching applications-including engine control, body electronics, and 48V system infrastructure-where AEC-Q101 compliance and long-term supply stability are mandatory.

FAQ

What is the maximum allowable gate-source voltage for DMTH10H003SPSW?

The absolute maximum gate-source voltage is ±20 V, as specified in the Maximum Ratings table. Operation beyond this range risks permanent gate oxide damage. For reliable switching, gate drive should be limited to 10 V to achieve rated R_DS(ON), with 12 V as upper practical limit considering overshoot margins.

Is DMTH10H003SPSW qualified to AEC-Q101?

Yes-the datasheet states that for automotive applications requiring AEC-Q101 qualification, PPAP capability, and IATF 16949 manufacturing, users should contact Diodes or their local representative. The device's +175°C rating, 100% UIS testing, and "Green" automotive-grade construction confirm its qualification readiness and typical use in AEC-Q101-compliant designs.

How does the PowerDI5060-8/SWP package improve thermal performance?

The package features an exposed drain pad spanning all eight pins, providing direct thermal conduction from the die to the PCB copper plane. With R_θJC = 0.9°C/W, it achieves significantly lower junction-to-case resistance than SO-8 or DPAK packages-enabling 166A continuous current at TC = +25°C when properly mounted on ≥1-inch² 2 oz copper with thermal vias.

Can DMTH10H003SPSW be used in synchronous rectification topologies?

Yes-the device includes a low-V_SD body diode (0.8–1.2 V at 20A) and fast reverse recovery (t_RR = 71.7 ns, Q_RR = 163.1 nC), making it suitable for synchronous rectification in DC-DC converters up to ~300 kHz. Its low R_DS(ON) further reduces conduction loss compared to Schottky alternatives in 48V output stages.