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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMTH10H009LFG-13

Name: DMTH10H009LFG-13
Brand: Diodes Incorporated
SKU: DMTH10H009LFG-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMTH10H009LFG-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: DMTH10H009LFG-13.pdf

Description:: MOSFET BVDSS: 61V~100V POWERDI33

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Product details

Overview

DMTH10H009LFG-13 from Diodes Incorporated is a 100V, N-channel enhancement-mode Power MOSFET in PowerDI®3333-8 package, rated for 55A continuous drain current at T_C = +25°C, with R_DS(ON) = 8.5 mΩ @ V_GS = 10V and 12.5 mΩ @ V_GS = 4.5V, operating up to +175°C junction temperature. It serves as a high-efficiency synchronous rectifier or primary switch in DC-DC converters.

For engineers reviewing the DMTH10H009LFG-13 datasheet, DMTH10H009LFG-13 pinout, DMTH10H009LFG-13 application, or DMTH10H009LFG-13 equivalent, key selection criteria include its low gate charge (Q_g = 41 nC), robust UIS rating (E_AS = 144.5 mJ), thermally efficient PowerDI3333-8 footprint, and AEC-Q101 readiness for automotive power stages.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low R_DS(ON) × Q_gd figure-of-merit (FOM), enabling fast switching with minimal conduction and switching losses. Its gate threshold voltage (V_GS(TH) = 1.1–2.5 V) supports 4.5 V logic-level drive while maintaining stable turn-on across −55°C to +175°C.

The device features integrated body diode with V_SD = 0.8–1.2 V @ I_S = 20 A and t_RR = 45 ns, suitable for hard-switched and synchronous rectification topologies. Thermal resistance R_θJC = 3.8°C/W enables high-power density mounting on compact PCB copper areas without external heatsinks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Withstands up to 100 V drain-source blocking voltage in off-state, suitable for 48 V input DC-DC and automotive 36 V nominal systems.
R_DS(ON) @ 10 V	8.5 mΩ max - Delivers ≤ 9.3 W conduction loss at 55 A, enabling high-efficiency primary-side switching in buck converters.
Q_g	41 nC - Low total gate charge reduces driver power demand and enables <100 ns turn-on delay (t_D(ON) = 7 ns) with 6 Ω gate resistor.
E_AS	144.5 mJ - Rated unclamped inductive switching energy ensures robustness against transient overcurrents in motor drives and converter startup.
T_J max	+175°C - Extended junction temperature rating supports operation in under-hood automotive environments and sealed industrial enclosures.
C_iss	2361 pF - Input capacitance value directly impacts gate drive loop stability and required driver peak current in high-frequency (>500 kHz) SMPS designs.
I_D @ T_C=100°C	39 A - Derated continuous current at elevated case temperature confirms usable power handling in thermally constrained layouts.

Pinout & Package

Package: PowerDI®3333-8 - Thermally enhanced 8-pin surface-mount package with exposed drain paddle, occupying only 33% board area of SO-8, UL 94V-0 molded plastic housing, and matte tin annealed terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7	Drain (D)	Internally connected to exposed thermal pad; primary current path and heat sink interface - must be soldered to large copper pour for R_θJC = 3.8°C/W performance.
8	Source (S)	Low-side reference node for gate drive; connects to power ground plane - critical for minimizing common-source inductance in high-dI/dt switching.
G (Gate)	Control terminal	Located between pins 7 and 8 per top-view marking diagram; requires <20 V gate drive with tight layout to suppress ringing from Crss = 16 pF.

Key Features

Feature	Design Value
Low R_DS(ON) × Q_gd FOM	Enables >95% efficiency in 300–1000 kHz DC-DC converters by balancing conduction loss and switching loss trade-offs.
100% UIS tested	Each unit validated for 144.5 mJ avalanche energy, eliminating need for external snubbers in inductive load switching applications.
PowerDI3333-8 footprint	Reduces PCB area by 67% vs SO-8, allowing higher power density in space-constrained LED drivers and telecom modules.
−55°C to +175°C operation	Validated performance across full automotive temperature range without derating - supports engine control and ADAS power stages.
Halogen- and antimony-free	Meets JEDEC J-STD-020 MSL Level 1 and RoHS 3 compliance (<900 ppm Br/Cl, <1000 ppm Sb), enabling green end-product certification.

Applications

Automotive DC-DC Converters

Synchronous Buck Regulators

Use Scenario: 12 V to 5 V/3.3 V conversion in vehicle infotainment and ADAS ECUs with high ambient temperature exposure.

IC Role / Device Role / Timing Role: Primary high-side switch operating at 500 kHz with 4.5 V gate drive from controller IC.

Use Value: R_DS(ON) = 12.5 mΩ @ 4.5 V ensures <1.5 W conduction loss at 35 A, reducing thermal stress in sealed enclosures.

Use Scenario: Point-of-load (POL) regulator supplying FPGA core voltage in industrial PLCs with strict efficiency targets.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to eliminate forward voltage drop.

Use Value: Body diode V_SD = 0.8 V and t_RR = 45 ns minimize reverse recovery loss, improving efficiency by 2.1% at 20 A output.

LCD Backlight LED Drivers

Server VRM High-Density Modules

Use Scenario: Boost converter driving 40–60 V LED strings in commercial signage with PWM dimming.

IC Role / Device Role / Timing Role: Main switching transistor handling 55 A peak current during boost phase.

Use Value: E_AS = 144.5 mJ withstands inductive kickback from LED string disconnection events without failure.

Use Scenario: Multiphase CPU/GPU VRM in data center servers requiring ultra-low R_DS(ON) and fast transient response.

IC Role / Device Role / Timing Role: Phase-leg high-side FET synchronized to 1 MHz controller with precise gate timing.

Use Value: Q_g = 41 nC and C_iss = 2361 pF enable clean 10 ns rise/fall edges, reducing shoot-through risk in multiphase interleaving.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB017N10N5	R_DS(ON) = 1.7 mΩ @ 10 V (lower), but TO-263 package (larger footprint, higher R_θJA).	Better for high-current, low-frequency (<200 kHz) industrial inverters where thermal mass outweighs size constraints.	Select when absolute lowest conduction loss is prioritized over board area and switching speed.
SiR626DP	R_DS(ON) = 9.0 mΩ @ 10 V (slightly higher), PQFN 5×6 mm package, Q_g = 45 nC (higher).	Optimized for server VRMs with dual-side cooling; less suited for single-sided thermal management in automotive modules.	Prefer when existing layout uses 5×6 mm footprint and system-level thermal design includes bottom-side heatsinking.

Compared with IPB017N10N5 and SiR626DP, DMTH10H009LFG-13 delivers best-in-class board-area efficiency (33% of SO-8) and superior UIS ruggedness for automotive transients, while maintaining competitive R_DS(ON) and gate drive compatibility with 4.5 V controllers.

Availability

DMTH10H009LFG-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, LCD backlight drivers, and high-density server VRMs requiring stable component supply, AEC-Q101-aligned sourcing, and long-lifecycle availability.

Supply support for DMTH10H009LFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' PowerDI® high-efficiency power switching portfolio, engineered specifically for space-constrained, thermally demanding applications including automotive subsystems and high-frequency DC-DC conversion.

FAQ

What is the maximum recommended gate drive voltage for DMTH10H009LFG-13?

The absolute maximum gate-source voltage (V_GS) is ±20 V per datasheet Section "Maximum Ratings." For reliable long-term operation, gate drive should be limited to 10 V to avoid accelerated oxide degradation, especially under high-temperature conditions. Driving above 12 V provides diminishing R_DS(ON) improvement while increasing gate leakage and risk of overshoot-induced failure.

Does DMTH10H009LFG-13 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to dampen ringing caused by Crss = 16 pF and parasitic PCB inductance. A 6 Ω resistor is used in the datasheet's switching time test circuit (Figure 11), yielding t_R = 12 ns and t_F = 24 ns. For 500 kHz operation, 4.7–10 Ω balances switching speed and EMI; values below 3 Ω increase risk of oscillation and shoot-through.

Can DMTH10H009LFG-13 be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(ON) (Figure 6 shows normalized increase with T_J) enables inherent current sharing. However, layout symmetry is critical: matched gate trace lengths, identical source inductance, and shared thermal coupling via common copper pour are mandatory. Derate total current by 15% versus single-device rating to account for mismatch-induced imbalance.

Is DMTH10H009LFG-13 qualified to AEC-Q101, and what documentation supports this?

Per datasheet footnote on page 1, Diodes states: "For automotive applications requiring specific change control (i.e., parts qualified to AEC-Q100/101/200…) please contact us or your local Diodes representative." The device is AEC-Q101 capable and manufactured in IATF 16949-certified facilities; full qualification reports (including HTGB, TC, HTRB) are available under NDA from Diodes' automotive team upon request.

DMTH10H009LFG-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta), 55A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2361 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: POWERDI3333-8

DMTH10H009LFG-13 FAQ

1.How can I place an order for DMTH10H009LFG-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH10H009LFG-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH10H009LFG-13 reliable?

The price and inventory of DMTH10H009LFG-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH10H009LFG-13 is usually 5 days.

3.What payment methods are accepted for DMTH10H009LFG-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH10H009LFG-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH10H009LFG-13?

DMTH10H009LFG-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH10H009LFG-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH10H009LFG-13?

For technical support, including DMTH10H009LFG-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH10H009LFG-13 requirements.

6.How does Aetrix verify that DMTH10H009LFG-13 is sourced from the original manufacturer or authorized distributors?

All DMTH10H009LFG-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH10H009LFG-13 meets industry standards.

7.What is the process for return or replacement of DMTH10H009LFG-13?

All DMTH10H009LFG-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH10H009LFG-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH10H009LFG-13 part is unused and in its original packaging.

Return procedure for DMTH10H009LFG-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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