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Diodes Incorporated DMTH10H009LFG-7
- Part No.:
- DMTH10H009LFG-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMTH10H009LFG-7.pdf
- Description:
- MOSFET BVDSS: 61V~100V POWERDI33
- Quantity:
- Payment:
- Shipping:
Inventory:1,180
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Product details
Overview
DMTH10H009LFG-7 from Diodes Incorporated is a 100V, 55A N-channel enhancement-mode Power MOSFET in PowerDI®3333-8 package, featuring 8.5mΩ RDS(ON) @ VGS = 10V and 12.5mΩ @ 4.5V, rated for 175°C operation, and optimized for synchronous rectification in high-density DC-DC converters.
For engineers reviewing the DMTH10H009LFG-7 datasheet, DMTH10H009LFG-7 pinout, DMTH10H009LFG-7 application, or DMTH10H009LFG-7 equivalent, key selection criteria include RDS(ON) at low gate drive (4.5V), UIS ruggedness (17A/144.5mJ), thermal resistance (RθJC = 3.8°C/W), and board-area efficiency versus SO-8.
Technical Context
This MOSFET employs trench-gate superjunction technology to achieve low Qgd × RDS(ON) figure-of-merit (FOM), enabling fast switching with minimal conduction loss. Its 100% production-tested UIS capability ensures robustness under inductive load transients.
The device operates across –55°C to +175°C junction temperature range and supports logic-level (4.5V) and standard (10V) gate drive. Its PowerDI3333-8 package delivers 3.8°C/W junction-to-case thermal resistance and occupies only 33% of the board area of an SO-8 footprint.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100V - Withstands up to 100V drain-source blocking voltage without breakdown. |
| RDS(ON) @ 10V | 8.5mΩ max - Enables ≤2.1W conduction loss at 55A continuous drain current. |
| RDS(ON) @ 4.5V | 12.5mΩ max - Supports efficient operation with 4.5V logic-level gate drive in compact converters. |
| Qg | 41nC - Total gate charge determines driver strength requirement and switching energy loss. |
| EAS | 144.5mJ - Avalanche energy rating validates reliability under unclamped inductive switching stress. |
| TJ max | +175°C - Extended temperature rating allows operation in high-ambient industrial and automotive under-hood environments. |
| RθJC | 3.8°C/W - Low junction-to-case thermal resistance enables high-power dissipation with minimal heatsink dependency. |
Pinout & Package
Package: PowerDI®3333-8 - thermally enhanced, lead-free, halogen-free surface-mount package with exposed drain pad for optimal heat transfer; dimensions 3.30mm × 3.30mm × 0.80mm; moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7 | Drain (D) | Internally paralleled drain terminals connected to exposed copper pad - primary heat path and high-current power return node. |
| 8 | Source (S) | Single-source terminal - referenced ground node for gate control and current sensing in low-side configurations. |
| G (Gate) | Gate (G) | Control input on pin 1 per top-view marking - requires <2.5V threshold turn-on and drives 41nC total gate charge. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) @ 4.5V | 12.5mΩ max enables high-efficiency operation in 5V-input or battery-powered DC-DC stages without level-shifting. |
| Qgd × RDS(ON) FOM | ≤93 mΩ·nC - balances switching speed and conduction loss for optimal power stage efficiency in MHz-range converters. |
| 100% UIS tested | 17A/144.5mJ avalanche rating verified per unit - eliminates need for external snubbers in flyback or synchronous buck applications. |
| PowerDI3333-8 footprint | 33% board area vs SO-8 - enables higher power density in space-constrained telecom, server, and LED driver PCBs. |
| 175°C TJ rating | Extended thermal margin supports sustained operation in sealed enclosures or near hot components without derating. |
Applications
| Synchronous Rectifier in Isolated DC-DC | High-Brightness LED Backlighting |
|---|---|
|
Use Scenario: Replaces Schottky diode in secondary-side of 48V–12V isolated flyback or forward converter for datacom power supplies. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch, commutated by controller's gate-drive signal synchronized to transformer reset. Use Value: Reduces conduction loss by >40% vs 40V Schottky, improving full-load efficiency from 92% to ≥94.5% at 50A output. |
Use Scenario: High-current PWM dimming switch in automotive center-stack LCD backlight with 24V input and 40V string voltage. IC Role / Device Role / Timing Role: High-side or low-side current-switching MOSFET controlled by MCU PWM with 100ns dead-time management. Use Value: 12.5mΩ RDS(ON) @ 4.5V allows direct 5V MCU drive; 175°C rating sustains 85°C ambient with 3A LED string current. |
| Industrial DC-DC Point-of-Load | Server VRM High-Side Switch |
|
Use Scenario: Input-side switch in 12V–3.3V/20A buck converter for PLC I/O module with tight thermal constraints. IC Role / Device Role / Timing Role: High-side NMOS switch in integrated power stage, driven by bootstrap gate driver with 10V gate bias. Use Value: 8.5mΩ RDS(ON) limits conduction loss to ≤1.7W at 20A, reducing heatsink volume by 60% vs TO-252 alternative. |
Use Scenario: High-side switch in 48V–12V intermediate bus converter for AI accelerator card requiring 100A peak current. IC Role / Device Role / Timing Role: Primary high-side power switch in multiphase buck topology, operating at 300kHz with 40ns dead time. Use Value: 3.8°C/W RθJC and 41nC Qg enable stable 120W dissipation with 25°C ΔT over case, avoiding thermal throttling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB180N10N3 G | 100V, 180A, 3.8mΩ @ 10V, PG-HSOF-8 package, RθJC = 1.2°C/W, but larger footprint (5.15×6.25mm). | Higher current handling; suited for multi-phase VRMs where thermal mass outweighs board area. | Select when >100A peak current and lower RθJC are prioritized over PCB real estate. |
| SI7157DP-T1-GE3 | 100V, 42A, 11.5mΩ @ 4.5V, PowerPAK® SO-8, RθJC = 4.5°C/W, no production UIS test specified. | Limited avalanche ruggedness; requires external clamping in flyback or boost topologies. | Choose only for non-inductive, low-stress applications like OR-ing or hot-swap where UIS is not critical. |
Compared with IPB180N10N3 G and SI7157DP-T1-GE3, DMTH10H009LFG-7 uniquely balances ultra-low 4.5V RDS(ON), industry-leading board-area efficiency, and production-verified UIS - making it optimal for space-constrained, high-reliability DC-DC designs.
Availability
DMTH10H009LFG-7 is available at Aetrix Electronics and suitable for synchronous rectification, LED backlighting, and industrial DC-DC point-of-load applications requiring stable component supply, long-lifecycle support, and AEC-Q200-aligned manufacturing rigor.
Supply support for DMTH10H009LFG-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with design and manufacturing facilities certified to IATF 16949 and ISO 9001 standards.
This part belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in industrial, computing, and automotive subsystems where thermal performance and gate-drive flexibility are critical.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The DMTH10H009LFG-7 supports 39A continuous drain current at TC = +100°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 55A rating at 25°C case temperature, based on its 3.8°C/W junction-to-case thermal resistance and internal silicon limits.
Does this MOSFET require a gate resistor for safe switching in a 300kHz buck converter?
Yes - a 6Ω gate resistor is used in the datasheet's dynamic characterization (tD(ON), tR, etc.) and is recommended to limit peak gate current, damp ringing, and control dV/dt. With 41nC Qg, a 6Ω resistor yields ~250ns effective rise time at 10V drive, aligning with typical 300kHz gate timing requirements.
Can DMTH10H009LFG-7 be used in a high-side configuration with bootstrap gate drive?
Yes - its ±20V VGSS rating and 2.5V typical VGS(TH) support bootstrap-based high-side operation. The device has been validated in 12V and 15V gate-drive systems; ensure bootstrap capacitor sizing accounts for 41nC Qg per cycle and minimum duty cycle requirements.
Is the PowerDI3333-8 package compatible with standard SO-8 reflow profiles?
Yes - the PowerDI3333-8 uses matte tin annealed terminals and complies with J-STD-020 moisture sensitivity level 1, allowing use with standard Pb-free reflow profiles (peak 260°C). Its 0.80mm height and thermal pad design require optimized stencil aperture (80–90% fill) for reliable solder joint formation.
DMTH10H009LFG-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Ta), 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 41 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2361 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- POWERDI3333-8
DMTH10H009LFG-7 FAQ
1.How can I place an order for DMTH10H009LFG-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH10H009LFG-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH10H009LFG-7 reliable?
The price and inventory of DMTH10H009LFG-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH10H009LFG-7 is usually 5 days.
3.What payment methods are accepted for DMTH10H009LFG-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH10H009LFG-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH10H009LFG-7?
DMTH10H009LFG-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH10H009LFG-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH10H009LFG-7?
For technical support, including DMTH10H009LFG-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH10H009LFG-7 requirements.
6.How does Aetrix verify that DMTH10H009LFG-7 is sourced from the original manufacturer or authorized distributors?
All DMTH10H009LFG-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH10H009LFG-7 meets industry standards.
7.What is the process for return or replacement of DMTH10H009LFG-7?
All DMTH10H009LFG-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH10H009LFG-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH10H009LFG-7 part is unused and in its original packaging.
Return procedure for DMTH10H009LFG-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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