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Diodes Incorporated DMTH10H009LFGQ-13
- Part No.:
- DMTH10H009LFGQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMTH10H009LFGQ-13.pdf
- Description:
- MOSFET BVDSS: 61V~100V POWERDI33
- Quantity:
- Payment:
- Shipping:
Inventory:2,926
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Product details
Overview
DMTH10H009LFGQ-13 from Diodes Incorporated is an AEC-Q101-qualified 100V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, delivering 8.5 mΩ RDS(ON) @ VGS = 10 V, 46 A continuous drain current at TC = +25°C, and operation up to +175°C junction temperature-designed for automotive synchronous rectifiers and DC-DC converters.
For engineers reviewing the DMTH10H009LFGQ-13 datasheet, DMTH10H009LFGQ-13 pinout, DMTH10H009LFGQ-13 application, or DMTH10H009LFGQ-13 equivalent, key selection criteria include its 100% UIS-tested ruggedness, low Qgd × RDS(ON) figure-of-merit (FOM), thermally efficient 3333-8 footprint occupying only 33% board area of SO-8, and PPAP-capable automotive qualification.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for high-efficiency DC-DC conversion in automotive power systems. Its gate threshold voltage (1.1–2.5 V) enables robust turn-on with standard 4.5 V logic-level drivers, while the 9.3 nC Qgd and 41 nC total gate charge support fast, low-loss switching at frequencies up to several hundred kHz.
The device integrates a body diode with 0.8–1.2 V forward voltage at 20 A and exhibits 144.5 mJ avalanche energy rating (EAS)-validated via 100% production UIS testing. Thermal resistance RθJC = 3.8°C/W enables high-power density mounting on compact PCB copper pads without external heatsinks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Withstands peak system voltages in 48 V automotive architectures and 24 V industrial rails without breakdown. |
| RDS(ON) max | 8.5 mΩ @ VGS = 10 V - Enables <1.7 W conduction loss at 46 A, critical for high-current synchronous rectification stages. |
| ID continuous | 46 A @ TC = +25°C - Supports high-output-current buck/boost converters in ADAS ECUs and infotainment power supplies. |
| Qgd | 9.3 nC - Low gate-drain charge minimizes Miller-induced switching delay and improves hard-switching efficiency in DC-DC topologies. |
| TJ max | +175°C - Rated for under-hood environments including engine control modules and battery management systems. |
| EAS | 144.5 mJ - Confirmed avalanche robustness ensures reliability during inductive load transients in motor drive and solenoid control. |
| RθJC | 3.8°C/W - Enables direct thermal coupling to PCB copper, eliminating need for mechanical heatsinks in space-constrained modules. |
Pinout & Package
Package: PowerDI® 3333-8 - Thermally enhanced, lead-free, halogen-free molded plastic package (UL 94V-0), 3.3 mm × 3.3 mm footprint, 0.8 mm height, with exposed drain pad for optimal heat transfer to PCB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (S) | Source | Four parallel source terminals reduce parasitic inductance and improve current sharing in high-di/dt applications. |
| 5, 6, 7, 8 (D) | Drain | Four drain terminals connected to large internal copper clip and exposed bottom pad-primary thermal and current path to PCB. |
| G (pin not numbered; top-side gate pad) | Gate | Single gate terminal located centrally on top surface-optimized for low-inductance gate drive routing and EMI control. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) × Qgd FOM | 79.1 mΩ·nC - Directly improves switching efficiency in high-frequency DC-DC converters by reducing overlap losses. |
| 100% UIS tested | 17 A IAS, 144.5 mJ EAS - Guarantees ruggedness against inductive kickback in automotive load-dump and motor-control scenarios. |
| Thermal footprint reduction | 33% smaller board area vs. SO-8 - Enables higher power density in compact ADAS camera modules and domain controllers. |
| AEC-Q101 qualification | PPAP-capable, IATF 16949 manufacturing - Meets automotive change control, traceability, and process stability requirements. |
| Green construction | Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb), RoHS 3 compliant - Supports global environmental compliance mandates. |
Applications
| Synchronous Rectifier in Automotive DC-DC | LED Backlight Driver for Instrument Clusters |
|---|---|
Use Scenario: High-efficiency 12 V to 5 V/3.3 V buck converter supplying microcontrollers and sensors in vehicle instrument clusters. IC Role / Device Role / Timing Role: Primary synchronous rectifier switch replacing Schottky diode to minimize conduction loss and thermal rise. Use Value: 8.5 mΩ RDS(ON) cuts rectifier loss by >60% vs. typical 40 V Schottky, enabling 95%+ efficiency at 20 A load. |
Use Scenario: Constant-current LED driver for TFT-LCD backlight in automotive dashboards, operating from 12 V battery rail. IC Role / Device Role / Timing Role: High-side PWM switch controlling LED string current with fast turn-on/off for dimming resolution. Use Value: 9.3 nC Qgd supports clean 1–20 kHz PWM edges, minimizing LED current ripple and visual flicker. |
| Power Management in ADAS ECUs | 48 V–12 V Bidirectional DC-DC Converter |
Use Scenario: Point-of-load regulator in radar or camera ECU requiring stable 1.2 V/15 A supply under wide ambient temperature swing. IC Role / Device Role / Timing Role: High-current, high-temperature MOSFET in multiphase buck stage handling transient loads up to 46 A. Use Value: +175°C rating and 3.8°C/W RθJC allow full-rated current without derating in sealed enclosures near engine bays. |
Use Scenario: Bidirectional buck-boost converter linking 48 V mild-hybrid rail to 12 V legacy systems in start-stop vehicles. IC Role / Device Role / Timing Role: Main power switch in dual-active-bridge topology, conducting bidirectional current up to 30 A. Use Value: 100% UIS validation ensures survival during fault conditions like short-circuit recovery and reverse polarity events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL100N10F7 | 100 V, 5.5 mΩ @ 10 V, TO-263-7 package, RθJC = 1.5°C/W - lower RDS(ON) but larger footprint and higher cost. | Requires heatsink for >30 A operation; less suitable for ultra-compact modules due to TO-263 size. | Select when maximum efficiency at high current outweighs board area constraints and thermal design complexity. |
| IXTQ120N10P | 100 V, 9.2 mΩ @ 10 V, TO-268 package, RθJC = 2.0°C/W - higher RDS(ON), larger thermal resistance, no AEC-Q101 qualification. | Limited to industrial/commercial use; lacks PPAP support and automotive-grade screening. | Acceptable for non-automotive 100 V switching where qualification and traceability are not required. |
Compared with STL100N10F7 and IXTQ120N10P, DMTH10H009LFGQ-13 delivers optimal balance of automotive qualification, compact 3333-8 thermal performance, and proven UIS ruggedness-making it preferred for space- and reliability-critical automotive power stages.
Availability
DMTH10H009LFGQ-13 is available at Aetrix Electronics and suitable for automotive synchronous rectifiers, LED backlight drivers, and ADAS ECU power management requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for DMTH10H009LFGQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.
This MOSFET belongs to Diodes' PowerDI® automotive-qualified portfolio, engineered specifically for high-density, high-temperature power conversion in AEC-Q101-compliant systems such as ADAS, body electronics, and electrified powertrain subsystems.
FAQ
What is the maximum allowable gate-source voltage for DMTH10H009LFGQ-13?
The absolute maximum gate-source voltage is ±20 V per the datasheet's Maximum Ratings table. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be limited to 10 V for full RDS(ON) specification or 4.5 V for logic-level compatibility, with transient spikes clamped using Zener diodes if needed.
Does DMTH10H009LFGQ-13 require a gate resistor for safe switching?
Yes-a gate resistor (typically 2–10 Ω) is recommended to dampen ringing caused by gate loop inductance and prevent unintended oscillation. The device's 1.7 Ω intrinsic gate resistance and 41 nC total gate charge make external resistance critical for controlling dV/dt and ensuring clean turn-on/turn-off in high-speed DC-DC converters.
Can DMTH10H009LFGQ-13 be used in parallel configurations?
Yes-its positive temperature coefficient of RDS(ON) (see Figure 7) enables inherent current sharing when paralleled. However, layout symmetry (matched gate and source inductance) and individual gate resistors are mandatory to avoid dynamic imbalance. Derating total current by 15% is advised for thermal margin in production designs.
Is the PowerDI3333-8 package compatible with standard reflow profiles?
Yes-the package is rated for moisture sensitivity level 1 (MSL-1) per J-STD-020 and supports standard Pb-free reflow profiles (peak 260°C). The matte tin finish ensures solderability per MIL-STD-202, Method 208, and the 0.034 g weight allows consistent placement accuracy in high-speed SMT lines.
DMTH10H009LFGQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Ta), 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 41 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2361 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 39W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- POWERDI3333-8
DMTH10H009LFGQ-13 FAQ
1.How can I place an order for DMTH10H009LFGQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH10H009LFGQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH10H009LFGQ-13 reliable?
The price and inventory of DMTH10H009LFGQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH10H009LFGQ-13 is usually 5 days.
3.What payment methods are accepted for DMTH10H009LFGQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH10H009LFGQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH10H009LFGQ-13?
DMTH10H009LFGQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH10H009LFGQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH10H009LFGQ-13?
For technical support, including DMTH10H009LFGQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH10H009LFGQ-13 requirements.
6.How does Aetrix verify that DMTH10H009LFGQ-13 is sourced from the original manufacturer or authorized distributors?
All DMTH10H009LFGQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH10H009LFGQ-13 meets industry standards.
7.What is the process for return or replacement of DMTH10H009LFGQ-13?
All DMTH10H009LFGQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH10H009LFGQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH10H009LFGQ-13 part is unused and in its original packaging.
Return procedure for DMTH10H009LFGQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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