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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMTH10H009LFGQ-7

Name: DMTH10H009LFGQ-7
Brand: Diodes Incorporated
SKU: DMTH10H009LFGQ-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMTH10H009LFGQ-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: DMTH10H009LFGQ-7.pdf

Description:: MOSFET BVDSS: 61V~100V POWERDI33

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Product details

Overview

DMTH10H009LFGQ from Diodes Incorporated is an AEC-Q101-qualified 100V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, delivering 8.5 mΩ R_DS(ON) @ V_GS = 10V, 46A I_D at T_C = +25°C, and rated for operation up to +175°C junction temperature-designed for automotive synchronous rectification and DC-DC converter power stages.

For engineers reviewing the DMTH10H009LFGQ datasheet, DMTH10H009LFGQ pinout, DMTH10H009LFGQ application, or DMTH10H009LFGQ equivalent, key selection criteria include its low Q_gd × R_DS(ON) figure-of-merit (FOM), 100% production-tested UIS robustness, and thermally efficient 3333-8 footprint enabling high-density automotive power designs.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for fast switching and low conduction loss in high-frequency automotive DC-DC converters. Its gate threshold voltage (1.1–2.5 V) ensures reliable turn-on with standard 3.3 V and 5 V logic-level drivers, while the 1.7 Ω gate resistance supports controlled dV/dt and EMI management.

The device integrates a robust body diode with 45 ns reverse recovery time and 68 nC Q_RR, validated for synchronous rectifier operation. Thermal design is enabled by R_θJC = 3.8 °C/W and a 175°C maximum junction rating-critical for under-hood applications where ambient temperatures exceed 105°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Withstands peak drain-source transients in 48 V automotive systems without avalanche breakdown.
R_DS(ON) @ V_GS = 10 V	8.5 mΩ max - Enables <1.7 W conduction loss at 46 A, reducing thermal load in compact power stages.
I_D @ T_C = +25°C	46 A - Supports high-current output rails in engine control units and ADAS power supplies.
Q_gd	9.3 nC - Low gate-drain charge minimizes Miller plateau duration, improving hard-switching efficiency.
E_AS	144.5 mJ - Confirmed unclamped inductive switching energy rating ensures reliability during load dump or short-circuit events.
T_J max	+175°C - Qualified for under-hood placement in transmission control modules and battery management systems.
R_θJC	3.8 °C/W - Enables direct heatsink mounting for >30 W continuous dissipation with minimal thermal interface resistance.

Pinout & Package

Package: PowerDI® 3333-8 - surface-mount, thermally enhanced 8-pin leadframe package with exposed drain paddle; occupies 33% board area of SO-8; UL 94V-0 molded compound; moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
S (Source)	Power return path for channel current	Three parallel source pins (Pins 1, 2, 3) reduce source inductance and improve current sharing in high-di/dt switching.
G (Gate)	Control electrode for channel modulation	Single gate pin (Pin 4) with 1.7 Ω intrinsic gate resistance-simplifies external gate driver design and dampens ringing.
D (Drain)	Main power output terminal	Four drain pins (Pins 5–8) plus large exposed paddle provide low-inductance, high-current drain connection and thermal conduction path.

Key Features

Feature	Design Value
Low R_DS(ON) × Q_gd FOM	~79 mΩ·nC - Optimized for high-frequency DC-DC converters where switching and conduction losses must both be minimized.
AEC-Q101 qualification & PPAP support	Validated for automotive production use per IATF 16949 processes - enables direct integration into Tier-1 BOMs without requalification.
100% production UIS testing	Every unit tested to 17 A avalanche current and 144.5 mJ energy - eliminates field failures due to inductive kickback in motor drivers or solenoid controls.
Thermally efficient 3333-8 footprint	3.3 mm × 3.3 mm body with 2.27 mm × 1.61 mm thermal pad - achieves 3.8 °C/W R_θJC in standard FR-4 layouts without thermal vias.
Halogen- and antimony-free "Green" construction	<900 ppm Br/Cl, <1000 ppm Sb - complies with automotive OEM environmental requirements including BMW GS95024-3 and VW 80101.

Applications

Synchronous Rectifier in Automotive DC-DC

High-Voltage LED Backlight Driver

Use Scenario: Replaces Schottky diode in 48 V → 12 V bidirectional buck-boost converter for vehicle infotainment display power supply.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 300 kHz with 100 ns dead-time control.

Use Value: Reduces forward conduction loss by 65% vs. 40 V Schottky, lowering thermal stress on PCB and enabling fanless enclosure design.

Use Scenario: High-side switch in adaptive LED headlamp matrix driver with PWM dimming up to 2 kHz.

IC Role / Device Role / Timing Role: Constant-current switch controlling 10 A LED string with fast turn-off (<24 ns fall time) to prevent ghosting.

Use Value: 8.5 mΩ R_DS(ON) limits voltage drop to <85 mV at 10 A, preserving >99% of available headlamp forward voltage margin.

Engine Control Unit (ECU) Power Management

12 V Battery Backup Switch

Use Scenario: Main power switch for 5 V/3.3 V LDO pre-regulator in gasoline/diesel ECU mainboard, handling cold-crank transients down to 4.5 V.

IC Role / Device Role / Timing Role: High-side load switch with integrated overtemperature shutdown and reverse polarity protection.

Use Value: +175°C rating allows placement near MCU heat sources; 100 V V_DSS withstands 80 V load-dump spikes without clamping diode.

Use Scenario: OR-ing switch in dual-battery (starter + auxiliary) system for commercial vehicles, preventing backfeed during alternator failure.

IC Role / Device Role / Timing Role: Ideal diode controller replacement with ultra-low forward voltage and reverse blocking.

Use Value: 0.8 V body diode V_SD at 20 A reduces power loss by 70% vs. discrete ideal diode IC solution, simplifying thermal layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL135N10F7AG	100 V, 1.35 mΩ R_DS(ON) @ 10 V, but 5× larger SO-8FL package and higher Q_gd (15.2 nC)	Higher current capability (135 A), but unsuitable for space-constrained modules due to 5.0 mm × 6.0 mm footprint	Select when peak current >60 A is required and board area is not constrained; avoid for ADAS camera modules.
IXTQ120N10L2	100 V, 12 mΩ R_DS(ON) @ 10 V, TO-263 package, no AEC-Q101 qualification	Lacks PPAP documentation and automotive process validation; requires full requalification for OEM use	Acceptable for industrial DC-DC prototypes; not approved for production automotive ECUs without additional qualification effort.

Compared with STL135N10F7AG and IXTQ120N10L2, DMTH10H009LFGQ delivers optimal balance of automotive compliance, thermal density, and switching efficiency-making it the preferred choice for volume production in space- and reliability-critical automotive power stages.

Availability

DMTH10H009LFGQ is available at Aetrix Electronics and suitable for automotive power management, synchronous rectification, and high-voltage LED driver applications requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for DMTH10H009LFGQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets-with ISO/TS 16949 and IATF 16949 certified manufacturing facilities.

This MOSFET belongs to Diodes' PowerDI® automotive-qualified portfolio, engineered specifically for high-efficiency, high-temperature power conversion in engine control, ADAS, and electrified vehicle subsystems.

FAQ

What is the maximum allowable gate-source voltage for DMTH10H009LFGQ?

The absolute maximum V_GS rating is ±20 V, per the datasheet's Maximum Ratings table. Operation beyond this range risks permanent gate oxide damage. For reliable 12 V gate drive, a Zener clamp at 12 V is recommended; for 5 V logic-level drive, no external clamping is needed since V_GS(TH) is 1.1–2.5 V and the device fully enhances below 4.5 V.

Does DMTH10H009LFGQ require a gate resistor for automotive PWM applications?

Yes-a series gate resistor (typically 2.2–10 Ω) is recommended to control dV/dt, suppress oscillation, and limit peak gate current during 300–500 kHz switching. The device's intrinsic R_g is 1.7 Ω, but external resistance improves EMI performance and prevents driver saturation in high-side configurations with bootstrap gate drives.

Can DMTH10H009LFGQ replace a TO-252 DPAK MOSFET in an existing automotive design?

Yes, with PCB layout revision: the PowerDI3333-8 has identical thermal pad centering and pin 1 location as DPAK, but smaller 3.3 mm × 3.3 mm body and 0.65 mm pitch. Required changes include shrinking pad widths to match 0.32 mm lead width and verifying solder mask clearance around the exposed drain paddle per Diodes' suggested layout (X3 = 2.37 mm, Y3 = 3.70 mm).

Is the body diode of DMTH10H009LFGQ suitable for reverse recovery in synchronous rectifier mode?

Yes-the body diode is characterized with t_RR = 45 ns and Q_RR = 68 nC at I_F = 13 A and dI/dt = 100 A/µs, making it suitable for synchronous rectification in 300–600 kHz DC-DC converters. Its soft recovery behavior minimizes voltage overshoot and EMI when paired with proper dead-time control.

DMTH10H009LFGQ-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Ta), 46A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2361 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 39W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: POWERDI3333-8

DMTH10H009LFGQ-7 FAQ

1.How can I place an order for DMTH10H009LFGQ-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH10H009LFGQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH10H009LFGQ-7 reliable?

The price and inventory of DMTH10H009LFGQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH10H009LFGQ-7 is usually 5 days.

3.What payment methods are accepted for DMTH10H009LFGQ-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH10H009LFGQ-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH10H009LFGQ-7?

DMTH10H009LFGQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH10H009LFGQ-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH10H009LFGQ-7?

For technical support, including DMTH10H009LFGQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH10H009LFGQ-7 requirements.

6.How does Aetrix verify that DMTH10H009LFGQ-7 is sourced from the original manufacturer or authorized distributors?

All DMTH10H009LFGQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH10H009LFGQ-7 meets industry standards.

7.What is the process for return or replacement of DMTH10H009LFGQ-7?

All DMTH10H009LFGQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH10H009LFGQ-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH10H009LFGQ-7 part is unused and in its original packaging.

Return procedure for DMTH10H009LFGQ-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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