Diodes Incorporated DMTH10H009LPS-13

Overview

DMTH10H009LPS-13 from Diodes Incorporated is a 100V, 100A N-channel enhancement-mode power MOSFET in PowerDI5060-8 package, featuring 8 mΩ R_DS(ON) at V_GS = 10 V and rated for continuous operation up to +175°C. It serves as a high-current load switch or synchronous rectifier in notebook battery management and DC-DC converters.

For engineers reviewing the DMTH10H009LPS-13 datasheet, DMTH10H009LPS-13 pinout, DMTH10H009LPS-13 application, or DMTH10H009LPS-13 equivalent, key selection criteria include its low R_DS(ON) at 4.5 V (12.5 mΩ), 100% production-tested UIS robustness, thermally efficient exposed-drain package, and suitability for high-ambient-temperature power management designs.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for conduction loss minimization while preserving fast switching performance. Its gate threshold voltage (1.2–2.5 V) enables compatibility with 3.3 V and 5 V logic-level drive, and its low Q_g (40.2 nC at V_GS = 10 V) supports high-frequency PWM operation.

The device integrates an intrinsic body diode with 0.8–1.2 V forward voltage at 13 A and exhibits 66 mJ avalanche energy rating (E_AS) under L = 0.3 mH conditions. Thermal resistance from junction-to-case is 1.2 °C/W, enabling high-power dissipation when mounted on a PCB with thermal vias to an internal copper plane.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 - Thermally enhanced surface-mount package with exposed drain pad (8-terminal, dual-side cooling capable). Dimensions: 5.15 mm × 6.15 mm × 1.00 mm max height; UL 94V-0 molded compound; matte tin annealed terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-temperature N-channel MOSFET applications.

Compared with IXTP110N10T and SUD15N10-60-E3, DMTH10H009LPS-13 delivers superior thermal performance (1.2 °C/W), verified avalanche ruggedness, and thinner profile-making it optimal for high-density, high-reliability power switching where board space and ambient temperature are critical constraints.

Availability

DMTH10H009LPS-13 is available at Aetrix Electronics and suitable for notebook battery management, industrial DC-DC converters, and motor control applications requiring stable component supply, long-term lifecycle support, and compliance with RoHS 3 and green manufacturing standards.

Supply support for DMTH10H009LPS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

This MOSFET belongs to Diodes' PowerDI® high-current portfolio, engineered specifically for thermally demanding, high-efficiency power switching in compact, high-ambient-temperature environments.

FAQ

What is the maximum continuous drain current at T_C = 100°C?

The DMTH10H009LPS-13 supports 72 A continuous drain current when case temperature is held at +100°C, per datasheet Note 7. This reflects thermal derating from the 100 A rating at 25°C, based on its 1.2 °C/W junction-to-case resistance and safe operating area limits.

Does this MOSFET require a gate resistor for stability?

A gate resistor (typically 3–10 Ω) is recommended to dampen ringing caused by gate loop inductance and the device's 2309 pF C_iss. The datasheet specifies t_D(ON), t_R, t_D(OFF), and t_F using R_g = 3 Ω, confirming that controlled turn-on/turn-off timing depends on external gate resistance selection.

Can DMTH10H009LPS-13 be used in synchronous rectification at 500 kHz?

Yes - its 14.9 ns turn-off fall time, 20.2 nC total gate charge at 4.5 V, and low Crss (13.7 pF) support efficient operation up to 500 kHz in well-designed synchronous buck converters, provided gate drive strength exceeds 2 A peak and layout minimizes parasitic inductance.

Is the PowerDI5060-8 package compatible with standard reflow profiles?

Yes - the device is MSL Level 1 per J-STD-020 and rated for lead-free reflow with peak temperatures up to 260°C. Its matte tin annealed terminals ensure solderability per MIL-STD-202, Method 208, and the green molding compound meets UL 94V-0 flammability requirements.