Diodes Incorporated DMTH10H009LPSQ-13

Overview

DMTH10H009LPSQ-13 from Diodes Incorporated is an AEC-Q101-qualified 100V N-channel enhancement-mode MOSFET in PowerDI5060-8 package, delivering 8 mΩ R_DS(ON) at V_GS = 10 V and 91 A continuous drain current at T_C = +25°C. It operates up to +175°C junction temperature and supports motor control, DC-DC converters, and automotive power management systems.

For engineers reviewing the DMTH10H009LPSQ-13 datasheet, DMTH10H009LPSQ-13 pinout, DMTH10H009LPSQ-13 application, or DMTH10H009LPSQ-13 equivalent, key selection criteria include its 1.5 °C/W R_θJC, 100% production-tested UIS robustness, low 13.7 pF Crss, and thermally efficient exposed-drain PowerDI5060-8 footprint for high-power density automotive designs.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in high-temperature automotive environments. Its gate threshold voltage (1.2–2.5 V) enables compatibility with 3.3 V and 5 V logic-level drivers, while the 40.2 nC total gate charge at V_GS = 10 V supports efficient PWM operation in 100 kHz–500 kHz DC-DC topologies.

The device integrates a body diode with 65.5 nC reverse-recovery charge and 44.3 ns t_RR, validated for synchronous rectification and bidirectional power flow. Thermal design leverages the exposed drain pad for direct PCB copper thermal coupling, achieving 100 W power dissipation at T_C = +25°C with R_θJC = 1.5 °C/W.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 - Thermally enhanced surface-mount package with exposed drain pad (8-terminal, dual-side cooling capable), 5.15 mm × 6.15 mm footprint, 1.0 mm nominal height, UL 94V-0 molded compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage automotive MOSFET applications.

Compared with STL220N10F7 and IXFH110N10P, DMTH10H009LPSQ-13 uniquely balances AEC-Q101 compliance, 8 mΩ conduction loss, and ultra-low-profile PowerDI5060-8 packaging - making it optimal for next-gen compact automotive power modules where qualification, thermal density, and board space are co-constrained.

Availability

DMTH10H009LPSQ-13 is available at Aetrix Electronics and suitable for electric power steering (EPS), 48 V DC-DC converters, and on-board chargers (OBC) requiring stable component supply across multi-year automotive production programs.

Supply support for DMTH10H009LPSQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets with IATF 16949-certified facilities.

This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for AEC-Q101-compliant high-temperature switching in 12 V, 48 V, and hybrid vehicle power systems.

FAQ

What is the maximum allowable gate-source voltage for DMTH10H009LPSQ-13?

The absolute maximum V_GS rating is ±20 V per the datasheet's Maximum Ratings table. Operation beyond ±15 V risks permanent gate oxide damage, especially at elevated temperatures. For robust 12 V gate drive, a 15 V zener clamp is recommended to prevent overshoot during fast switching transitions.

Does DMTH10H009LPSQ-13 require a negative gate voltage for safe turn-off in high-dV/dt environments?

No - the device has a gate threshold voltage range of 1.2–2.5 V and is fully enhanced at 0 V; no negative V_GS is required. However, applying –5 V during off-state improves noise immunity in high-noise motor drive applications and suppresses unintended turn-on from Miller coupling.

Can DMTH10H009LPSQ-13 be used in parallel configurations for higher current handling?

Yes - its positive temperature coefficient of R_DS(ON) (normalized resistance increases with junction temperature, per Figure 6) enables inherently stable current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and individual gate resistors to ensure simultaneous switching and minimize circulating currents.

What is the minimum recommended PCB copper area for the exposed drain pad in PowerDI5060-8?

For full 100 W power dissipation at T_C = +25°C, Diodes specifies a minimum 1 in² (645 mm²) of 2 oz copper connected directly to the drain pad via ≥8 thermal vias (0.3 mm diameter, 0.8 mm pitch). Smaller areas reduce power capability proportionally - e.g., 0.5 in² limits PD to ~60 W per thermal simulation data in Note 7.