Diodes Incorporated DMTH10H009SPS-13
- Part No.:
- DMTH10H009SPS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH10H009SPS-13.pdf
- Description:
- MOSFET N-CH 100V PWRDI5060
- Quantity:
- Payment:

- Shipping:

Inventory:9,352
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Product details
Overview
DMTH10H009SPS from Diodes Incorporated is a 100V, 8.9mΩ (max @ VGS = 10V), 88A N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for continuous operation up to +175°C. It serves as a high-current load switch or synchronous rectifier in notebook battery management and DC-DC converters, delivering low conduction loss and fast switching with 30nC total gate charge.
For engineers reviewing the DMTH10H009SPS datasheet, DMTH10H009SPS pinout, DMTH10H009SPS application, or DMTH10H009SPS equivalent, key selection criteria include RDS(ON) at 10V drive, thermal resistance (RθJC = 1.5°C/W), UIS ruggedness (11A/181.5mJ), and compatibility with thin-profile power designs requiring <1.1mm height.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low RDS(ON) while maintaining controlled Qg (30nC) and Crss (13pF), enabling efficient hard-switching in high-frequency DC-DC topologies. Its 100% production-tested UIS ensures robustness against inductive turn-off stress without external snubbers.
The device features a thermally enhanced PowerDI5060-8 package with exposed drain pad for direct PCB heat sinking, supporting 100W dissipation at TC = +25°C. Gate threshold voltage (2–4V) enables reliable 3.3V/5V logic-level drive in load-switch configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100V - Supports input rails up to 80V DC with margin for transients in industrial and computing power supplies. |
| RDS(ON) max | 8.9mΩ @ VGS = 10V - Enables ≤0.9W conduction loss at 10A, critical for high-efficiency notebook battery switches. |
| ID (TC = 25°C) | 88A - Sustains high pulsed loads in motor control H-bridge legs and hot-swap circuits without derating. |
| Qg | 30nC - Balances switching speed and drive strength; allows use with standard gate drivers (e.g., TC442x) at ≤1MHz. |
| RθJC | 1.5°C/W - Permits direct thermal coupling to copper planes, achieving junction-to-case temperature rise of ≤150°C at 100W. |
| EAS | 181.5mJ - Withstands repetitive inductive energy spikes in motor drives without avalanche failure. |
| TJ max | +175°C - Qualified for under-hood automotive auxiliary modules and high-ambient industrial controllers. |
Pinout & Package
Package: PowerDI5060-8 - Surface-mount, thermally enhanced 8-pin leadless package with exposed drain pad (D), 1.0mm nominal profile, RoHS-compliant matte tin finish on copper leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 3, 4, 6, 7 | Drain (D) | Five parallel internal drain connections tied to exposed thermal pad - primary current path and thermal conduction path to PCB. |
| 2, 5, 8 | Source (S) | Three source terminals providing low-inductance return path; used for Kelvin sensing or current monitoring in precision load switches. |
| Grounded tab (exposed pad) | Drain (D) | Integral part of drain node; must be soldered to large copper area for thermal and electrical performance. |
| Pin 1 (marked) | Source (S) | Index pin for orientation; electrically identical to other source pins but designated for layout reference. |
Key Features
| Feature | Design Value |
|---|---|
| +175°C operating rating | Validated continuous operation at maximum junction temperature - eliminates thermal derating in sealed enclosures or high-ambient environments. |
| 100% production UIS testing | Every unit tested to 11A/3mH avalanche stress - guarantees no latent defects in inductive load switching applications. |
| Thermally efficient PowerDI5060-8 | 1.5°C/W RθJC with exposed drain pad - reduces heatsink dependency and enables compact 2-layer board designs. |
| Low Ciss/Coss ratio | Ciss = 2085pF, Coss = 609pF - improves reverse recovery behavior and reduces EMI in synchronous buck converters. |
| Lead-free & halogen-free | <900ppm Br, <900ppm Cl, <1000ppm Sb - meets IPC-1752A Class 3 material declarations for green electronics compliance. |
Applications
| High-Efficiency Notebook Battery Switch | Industrial DC-DC Converter Primary Switch |
|---|---|
|
Use Scenario: Bidirectional battery protection circuit isolating Li-ion pack during charging/discharging and fault conditions. IC Role / Device Role / Timing Role: High-side load switch controlling main power path with fast turn-on (<14ns rise time) and low RDS(ON) to minimize voltage drop. Use Value: Enables >99% power efficiency at 20A load and extends battery runtime by reducing conduction loss versus legacy SO-8 MOSFETs. |
Use Scenario: 48V-to-12V synchronous buck converter in programmable logic controller (PLC) power supply. IC Role / Device Role / Timing Role: High-current, high-frequency (500kHz) high-side switch with low Qgd/Qg ratio for reduced Miller-induced shoot-through risk. Use Value: Achieves 30% lower switching loss than comparable 100V TrenchFETs, allowing full-load operation without forced air cooling. |
| Automotive HVAC Blower Motor Driver | Server VRM High-Side Switch |
|
Use Scenario: PWM-controlled 24V blower motor in passenger compartment climate system with ambient up to +105°C. IC Role / Device Role / Timing Role: Half-bridge high-side switch handling 30A peak current, leveraging +175°C rating for under-dash mounting. Use Value: Eliminates need for external thermal sensors or derating curves - simplifies qualification per AEC-Q101 requirements (via DMTH10H009SPSQ variant). |
Use Scenario: 12V input stage of multi-phase CPU voltage regulator module (VRM) in enterprise servers. IC Role / Device Role / Timing Role: High-current, low-RDS(ON) switch operating in paralleled configuration with tight thermal coupling via shared drain pad. Use Value: Reduces phase current imbalance by 40% versus discrete TO-252 devices due to matched RDS(ON) and thermal response across paralleled units. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB180N10N3 G | RDS(ON) = 9.0mΩ @ 10V; larger PG-HSOF-8 package (1.6mm height); higher Qg = 42nC | Better suited for industrial inverters requiring higher avalanche energy (EAS = 320mJ) | Select when higher single-pulse ruggedness is required and board height ≥1.6mm is acceptable. |
| SUD15N10-45L | RDS(ON) = 4.5mΩ @ 10V; smaller PowerPAK SO-8; lower ID = 50A; not rated >150°C | Optimized for space-constrained consumer adapters where thermal margin is less critical | Choose only for low-temperature, low-power-density applications where 1.1mm profile is non-negotiable. |
Compared with IPB180N10N3 G and SUD15N10-45L, DMTH10H009SPS uniquely balances ultra-low profile (<1.1mm), +175°C rating, and 88A current capability - making it optimal for thermally dense, high-reliability portable and industrial power systems where height and ambient temperature are limiting factors.
Availability
DMTH10H009SPS-13 is available at Aetrix Electronics and suitable for notebook battery management, industrial DC-DC converters, and automotive HVAC motor controls requiring stable component supply and long-term manufacturability.
Supply support for DMTH10H009SPS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.
This device belongs to Diodes' PowerMOS™ family, engineered specifically for high-current, high-temperature switching applications where low RDS(ON), robust UIS performance, and compact thermally enhanced packaging are essential design requirements.
FAQ
What is the maximum continuous drain current at TC = +100°C?
The DMTH10H009SPS supports 62A continuous drain current at case temperature +100°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating based on RθJC = 1.5°C/W and maximum junction temperature of +175°C, ensuring safe operation in convection-cooled industrial enclosures.
Does this MOSFET require a gate resistor for stability in 500kHz switching?
Yes - a 6Ω gate resistor is used in the datasheet's dynamic characterization (tD(ON), tR). For 500kHz operation, a 4.7Ω to 10Ω resistor is recommended to dampen ringing caused by Crss = 13pF and parasitic PCB inductance, while maintaining tR < 15ns and minimizing driver power dissipation.
Can the PowerDI5060-8 package be hand-soldered using hot-air rework?
Yes - the PowerDI5060-8 is compatible with hot-air rework at peak temperatures ≤350°C for ≤30 seconds, provided the exposed drain pad is fully reflowed using a preheated board and calibrated nozzle. Diodes recommends using solder paste with SnAgCu alloy and verifying voiding <15% under the thermal pad via X-ray inspection.
Is the body diode suitable for synchronous rectification in a 100kHz LLC resonant converter?
No - although the body diode has VSD = 0.8–1.2V at 13A, its reverse recovery time (tRR = 45ns) and charge (QRR = 68nC) are too high for zero-voltage switching in LLC topologies. External Schottky or GaN FETs are recommended for secondary-side rectification at this frequency.
DMTH10H009SPS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Ta), 88A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 8.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2085 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.6W (Ta), 100W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8
DMTH10H009SPS-13 FAQ
1.How can I place an order for DMTH10H009SPS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH10H009SPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH10H009SPS-13 reliable?
The price and inventory of DMTH10H009SPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH10H009SPS-13 is usually 5 days.
3.What payment methods are accepted for DMTH10H009SPS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH10H009SPS-13 transactions.
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4.How is shipping managed for DMTH10H009SPS-13?
DMTH10H009SPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH10H009SPS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH10H009SPS-13?
For technical support, including DMTH10H009SPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH10H009SPS-13 requirements.
6.How does Aetrix verify that DMTH10H009SPS-13 is sourced from the original manufacturer or authorized distributors?
All DMTH10H009SPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH10H009SPS-13 meets industry standards.
7.What is the process for return or replacement of DMTH10H009SPS-13?
All DMTH10H009SPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH10H009SPS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH10H009SPS-13 part is unused and in its original packaging.
Return procedure for DMTH10H009SPS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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