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Diodes Incorporated DMTH10H009SPSQ-13

Part No.:
DMTH10H009SPSQ-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixDMTH10H009SPSQ-13.pdf
Description:
MOSFET BVDSS: 61V~100V POWERDI50
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,599

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Product details

Overview

DMTH10H009SPSQ from Diodes Incorporated is a 100V, 8.9mΩ (at VGS = 10V), 86A N-channel enhancement-mode MOSFET in PowerDI5060-8 package, qualified to AEC-Q101 and rated for +175°C operation. It delivers low conduction loss and fast switching in automotive motor controls, DC-DC converters, and high-temperature power management systems.

For engineers reviewing the DMTH10H009SPSQ datasheet, DMTH10H009SPSQ pinout, DMTH10H009SPSQ application, or DMTH10H009SPSQ equivalent, key selection criteria include RDS(ON) stability over temperature, 100% production-tested UIS robustness, thermal resistance (RθJC = 1.5°C/W), and AEC-Q101 qualification with PPAP support.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) and high avalanche energy (EAS = 181.5 mJ). Its gate threshold voltage (VGS(TH) = 2–4V) ensures reliable turn-on with standard 10V gate drivers while maintaining noise immunity.

The PowerDI5060-8 package integrates an exposed drain pad for direct thermal coupling to PCB copper, enabling 100W continuous dissipation at TC = +25°C. Dynamic parameters-including Qg = 30 nC, Ciss = 2085 pF, and tF = 17.3 ns-support high-frequency synchronous rectification and PWM control up to 500 kHz.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 100 V - Withstands 80V DC bus transients in 48V automotive systems without breakdown.
RDS(ON) max 8.9 mΩ @ VGS = 10V - Enables ≤0.9 W conduction loss at 10A continuous drain current.
ID (TC = +25°C) 86 A - Supports high-current motor phase legs and primary-side switches in 1–3 kW DC-DC stages.
EAS 181.5 mJ - Sustains repetitive inductive switching events in brushed motor commutation without failure.
RθJC 1.5 °C/W - Allows junction-to-case temperature rise of only 15°C at 10W power dissipation.
Qg 30 nC - Matches standard gate drivers (e.g., UCC27531) with <1 µs turn-on delay under 10Ω drive.
TJ max +175°C - Meets under-hood ambient requirements per ISO 16750-4 for engine bay electronics.

Pinout & Package

Package: PowerDI5060-8 - thermally enhanced 8-pin molded plastic package with exposed drain pad (pins 2–5 and 7–8 are internally connected to drain), 1.0 mm profile, RoHS-compliant matte tin finish on copper leadframe.

Pin/Terminal Circuit Role Design Meaning
1 Source Low-side return path; electrically isolated from drain; connects to PCB ground plane via dedicated S pad.
2–5, 7–8 Drain High-current power output node; all pins tied internally to exposed metal pad for minimal thermal impedance.
6 Gate Control input; requires <10V drive for full enhancement; sensitive to ESD (±20V rating).

Key Features

Feature Design Value
AEC-Q101 qualified & PPAP capable Validated for automotive production use with full change control, IATF 16949 manufacturing, and traceable lot data.
100% UIS tested in production Every unit passes unclamped inductive switching stress test (L = 3 mH, IAS = 11 A), ensuring field reliability in motor flyback events.
RDS(ON) vs. temperature flatness Normalized RDS(ON) remains ≤2.2× at +175°C (vs. +25°C), minimizing thermal runaway risk in sustained overload.
Low-profile 1.1 mm height Enables integration into space-constrained modules such as e-powertrain inverters and ADAS domain controllers.
Halogen- and antimony-free "Green" construction Meets EU RoHS 3 (2015/863/EU) with Br+Cl <1500 ppm and Sb <1000 ppm; supports end-of-life compliance.

Applications

Automotive Motor Control 48V DC-DC Converter Primary Switch

Use Scenario: High-side switch in 12V/48V bi-directional DC-DC converter for mild hybrid vehicles.

IC Role / Device Role / Timing Role: Primary synchronous rectifier switch operating at 200 kHz PWM with 50% duty cycle.

Use Value: 8.9 mΩ RDS(ON) reduces conduction loss by 35% vs. legacy 13 mΩ devices, improving peak efficiency from 94.2% to 95.1%.

Use Scenario: Low-side switch in buck converter supplying 12V auxiliary power from 48V battery.

IC Role / Device Role / Timing Role: Fast-switching power FET with tF = 17.3 ns and Qgd/Qgs = 0.77 for clean gate drive timing.

Use Value: 30 nC total gate charge enables efficient driving with 1-A peak gate driver, reducing gate drive losses by 22%.

Engine Bay Power Distribution Electric Power Steering (EPS) H-Bridge

Use Scenario: Load switch controlling HVAC blower motor in under-hood junction box.

IC Role / Device Role / Timing Role: High-reliability power switch subjected to 175°C ambient and load dump transients.

Use Value: +175°C rating and 100V VDSS withstand 120V load dump spikes without derating, eliminating external TVS.

Use Scenario: Phase-leg switch in 3-phase EPS inverter driving brushless motor.

IC Role / Device Role / Timing Role: Half-bridge low-side device handling 60A peak phase current with body diode recovery (tRR = 45 ns).

Use Value: 83A continuous body diode current and 68 nC QRR minimize reverse recovery loss during shoot-through prevention.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N10F7 RDS(ON) = 7.5 mΩ @ 10V but rated only to +175°C with no AEC-Q101 documentation; RθJC = 1.7°C/W. Lacks PPAP support and documented UIS testing; suitable for non-safety-critical industrial use only. Select when cost sensitivity outweighs automotive qualification requirements and thermal margin is ≥10% higher.
IXTP50N10L2 TO-220 package (RθJC = 1.2°C/W) but RDS(ON) = 10.5 mΩ @ 10V; not AEC-Q101 qualified; 150°C TJ max. Requires heatsink mounting; incompatible with automated SMT assembly; unsuitable for under-hood placement. Choose only for prototyping or legacy through-hole designs where board real estate and thermal mass permit discrete heatsinking.

Compared with STL220N10F7 and IXTP50N10L2, DMTH10H009SPSQ uniquely combines AEC-Q101 qualification, production UIS testing, and SMT-compatible PowerDI5060-8 packaging-enabling drop-in replacement in automotive production without requalification or layout changes.

Availability

DMTH10H009SPSQ is available at Aetrix Electronics and suitable for automotive motor control, 48V DC-DC conversion, and engine bay power distribution requiring stable component supply across multi-year vehicle production cycles.

Supply support for DMTH10H009SPSQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets since 1964.

This device belongs to Diodes' Automotive Power MOSFET product line, engineered specifically for high-temperature, high-reliability switching in electrified vehicle subsystems including powertrain, chassis, and ADAS.

FAQ

What is the maximum continuous drain current at +100°C case temperature?

The DMTH10H009SPSQ supports 61 A continuous drain current at TC = +100°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat transfer efficiency at elevated case temperatures and must be validated against actual PCB copper area and airflow conditions.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor (typically 5–10 Ω) is recommended to dampen ringing caused by gate loop inductance and prevent spurious turn-on from dv/dt coupling. The device's 1.7 Ω intrinsic gate resistance and 30 nC Qg make it compatible with standard 1-A gate drivers without external limiting, but layout-dependent parasitics necessitate empirical tuning.

Is the body diode suitable for synchronous rectification in a buck converter?

Yes-the body diode has tRR = 45 ns and QRR = 68 nC at IF = 13 A, enabling use in synchronous buck topologies up to 300 kHz. However, its forward voltage (VSD = 0.8–1.2 V) is higher than Schottky alternatives, so efficiency gain depends on duty cycle and load current.

How is moisture sensitivity classified for this package?

The PowerDI5060-8 package is rated Moisture Sensitivity Level 1 (MSL-1) per J-STD-020, meaning it may be stored indefinitely at ≤30°C/85% RH without baking prior to reflow. This eliminates pre-bake steps in standard SMT assembly lines and reduces manufacturing overhead.

DMTH10H009SPSQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
14A (Ta), 86A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
8.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
30 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2085 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
1.6W (Ta), 100W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PowerDI5060-8

DMTH10H009SPSQ-13 FAQ

1.How can I place an order for DMTH10H009SPSQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH10H009SPSQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH10H009SPSQ-13 reliable?

The price and inventory of DMTH10H009SPSQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH10H009SPSQ-13 is usually 5 days.

3.What payment methods are accepted for DMTH10H009SPSQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH10H009SPSQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH10H009SPSQ-13?

DMTH10H009SPSQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH10H009SPSQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH10H009SPSQ-13?

For technical support, including DMTH10H009SPSQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH10H009SPSQ-13 requirements.

6.How does Aetrix verify that DMTH10H009SPSQ-13 is sourced from the original manufacturer or authorized distributors?

All DMTH10H009SPSQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH10H009SPSQ-13 meets industry standards.

7.What is the process for return or replacement of DMTH10H009SPSQ-13?

All DMTH10H009SPSQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH10H009SPSQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH10H009SPSQ-13 part is unused and in its original packaging.

Return procedure for DMTH10H009SPSQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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