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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMTH10H010LCTB-13

Name: DMTH10H010LCTB-13
Brand: Diodes Incorporated
SKU: DMTH10H010LCTB-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMTH10H010LCTB-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: DMTH10H010LCTB-13.pdf

Description:: MOSFET N-CH 100V 108A TO220AB

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Product details

Overview

DMTH10H010LCTB-13 from Diodes Incorporated is a 100V, 100A N-channel enhancement-mode MOSFET in TO263AB (D2PAK) package, featuring 9.5mΩ R_DS(ON) @ V_GS = 10V, 175°C maximum junction temperature, and 100% unclamped inductive switching rating-designed for high-efficiency synchronous rectification in DC-DC converters and inverters.

For engineers reviewing the DMTH10H010LCTB-13 datasheet, DMTH10H010LCTB-13 pinout, DMTH10H010LCTB-13 application, or DMTH10H010LCTB-13 equivalent, key selection criteria include R_DS(ON) at 4.5V/10V, Q_g (53.7nC), thermal resistance (R_θJC = 1.0°C/W), avalanche energy (E_AS = 187mJ), and +175°C operation capability in high-ambient industrial power systems.

Technical Context

This MOSFET employs planar trench-gate technology to achieve low on-resistance while maintaining fast switching performance via minimized gate charge (Q_g = 53.7nC) and low Crss (45pF). Its 1.0°C/W junction-to-case thermal resistance enables high-power dissipation in compact heatsink-limited designs.

The device supports robust unclamped inductive switching (IAS = 35A, EAS = 187mJ) and exhibits stable R_DS(ON) over temperature (±15% variation from −55°C to +175°C at V_GS = 10V), making it suitable for thermally demanding motor drives and solar inverters where reliability under transient stress is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100V - Supports 48V–72V bus architectures with 30%+ voltage margin for transients.
R_DS(ON) max	9.5mΩ @ V_GS = 10V - Enables ≤0.95W conduction loss at 100A, reducing heatsink size.
Q_g	53.7nC - Low gate drive power requirement; compatible with standard 1A peak gate drivers.
T_J max	+175°C - Allows operation in engine bay, industrial enclosures, or sealed power modules without derating.
E_AS	187mJ - Withstands repetitive inductive turn-off stress in hard-switched topologies without snubbers.
I_D continuous	100A @ T_C = +25°C - Delivers full rated current with minimal PCB copper area when mounted to heatsink.
C_iss	2592pF - Predictable input capacitance for accurate gate drive timing and EMI modeling.

Pinout & Package

Package: TO263AB (D2PAK), surface-mount, thermally enhanced plastic case with exposed drain pad. Moisture sensitivity level 1 per J-STD-020. Weight: 1.7g.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Exposed metal tab electrically connected to Drain; must be soldered to large copper pour for thermal and electrical conduction.
Source	Reference node for gate control and current return	Low-inductance source connection essential for minimizing switching oscillation and body diode reverse recovery noise.
Gate	Control electrode for channel modulation	High-impedance input requiring <20V absolute max rating; layout must minimize trace inductance to suppress ringing during fast transitions.

Key Features

Feature	Design Value
+175°C rated junction temperature	Enables deployment in under-hood automotive, industrial motor drives, and sealed power supplies without thermal throttling.
100% unclamped inductive switching (UIS) tested	Guarantees robustness against inductive kickback in flyback, LLC, and half-bridge configurations without external clamping.
Low Q_g (53.7nC) and low C_rss (45pF)	Reduces switching losses and improves controllability in high-frequency (>100kHz) ZVS/ZCS topologies.
Lead-free, halogen- and antimony-free "Green" construction	Meets RoHS 3 (2015/863/EU) and automotive ELV directive requirements for sustainable manufacturing.
Low R_DS(ON) @ 4.5V (17mΩ)	Supports logic-level gate drive from 5V microcontrollers or PWM controllers without level-shifting circuitry.

Applications

Server VRM

Solar Microinverter

Use Scenario: High-current, high-frequency buck converter supplying CPU core voltage in datacenter servers.

IC Role / Device Role: Synchronous rectifier in multiphase buck stage, replacing Schottky diodes to reduce conduction loss.

Use Value: 9.5mΩ R_DS(ON) cuts rectifier loss by >60% vs. 40V Schottky, improving efficiency from 92% to 95.2% at 100A load.

Use Scenario: DC-AC H-bridge stage in single-phase photovoltaic microinverter with transformerless topology.

IC Role / Device Role: High-side switch in interleaved full-bridge, operating at 50kHz with 100V DC input.

Use Value: +175°C rating allows direct mounting to aluminum chassis without isolation pads, simplifying thermal design and reducing BOM count.

Industrial Motor Drive

EV Onboard Charger

Use Scenario: Three-phase inverter driving 3kW PMSM in HVAC compressor or pump system.

IC Role / Device Role: Low-side switching element in IGBT/MOSFET hybrid inverter leg, handling 70A RMS phase current.

Use Value: 187mJ E_AS withstands repeated short-circuit events during motor stall detection, eliminating need for desaturation protection circuitry.

Use Scenario: AC-DC PFC boost stage and isolated DC-DC stage in 6.6kW bidirectional OBC for BEVs.

IC Role / Device Role: Primary-side switch in totem-pole PFC and secondary-side synchronous rectifier in LLC resonant converter.

Use Value: Dual-use capability enabled by low Q_g and stable R_DS(ON) across −40°C to +125°C ambient, supporting wide-input-voltage and dual-directional operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-temperature MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL110N10F7	R_DS(ON) = 7.5mΩ @ 10V but rated only to +150°C; Q_g = 62nC; no UIS rating specified.	Better conduction loss at room temp, but derates faster above 100°C and lacks avalanche ruggedness validation.	Prefer for cost-sensitive, lower-ambient telecom PSUs where thermal margin is ample.
IXFH100N10L2	R_DS(ON) = 9.0mΩ @ 10V; T_J max = +175°C; Q_g = 68nC; E_AS = 220mJ; TO-247 package.	Higher gate charge increases driver loss; through-hole TO-247 requires larger PCB real estate and manual assembly.	Choose when higher avalanche margin is mandatory and board space permits through-hole mounting.

Compared with STL110N10F7 and IXFH100N10L2, DMTH10H010LCTB-13 uniquely balances ultra-low R_DS(ON), industry-leading +175°C rating, validated UIS robustness, and surface-mount D2PAK packaging-making it optimal for space-constrained, thermally aggressive industrial and automotive power stages.

Availability

DMTH10H010LCTB-13 is available at Aetrix Electronics and suitable for server VRMs, solar microinverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and RoHS 3-compliant sourcing.

Supply support for DMTH10H010LCTB-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with design centers across Asia, Europe, and the US, serving industrial, computing, and automotive markets.

This MOSFET belongs to Diodes' PowerMOS™ high-performance trench-based product line, engineered specifically for high-efficiency, high-reliability power conversion in thermally constrained environments.

FAQ

What is the maximum continuous drain current at T_C = +100°C?

The DMTH10H010LCTB-13 supports 71A continuous drain current at case temperature of +100°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat transfer efficiency at elevated temperatures and must be verified with actual PCB layout and heatsink performance.

Does this MOSFET have integrated gate protection?

No, the DMTH10H010LCTB-13 does not include integrated gate protection diodes or Zener clamps. External gate-source TVS (e.g., 15V) is recommended when driving from noisy or inductive gate loops, especially in automotive environments where load-dump transients may exceed ±20V V_GSS rating.

Can it replace a TO-220 MOSFET in existing designs?

Yes, but with layout adaptation: the TO263AB (D2PAK) footprint differs significantly from TO-220-requiring new pad layout, thermal via placement under the drain tab, and re-evaluation of gate loop inductance. The improved R_DS(ON) and thermal performance justify redesign effort in high-efficiency upgrades.

Is the body diode optimized for reverse recovery in synchronous rectification?

Yes-the body diode exhibits t_RR = 49.8ns and Q_RR = 85.1nC at I_F = 13A and di/dt = 100A/µs, enabling efficient synchronous rectification in high-frequency DC-DC converters without significant shoot-through risk when properly timed.

DMTH10H010LCTB-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 108A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9.5mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 53.7 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2592 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 2.4W (Ta), 166W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263

DMTH10H010LCTB-13 FAQ

1.How can I place an order for DMTH10H010LCTB-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH10H010LCTB-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH10H010LCTB-13 reliable?

The price and inventory of DMTH10H010LCTB-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH10H010LCTB-13 is usually 5 days.

3.What payment methods are accepted for DMTH10H010LCTB-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH10H010LCTB-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH10H010LCTB-13?

DMTH10H010LCTB-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH10H010LCTB-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH10H010LCTB-13?

For technical support, including DMTH10H010LCTB-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH10H010LCTB-13 requirements.

6.How does Aetrix verify that DMTH10H010LCTB-13 is sourced from the original manufacturer or authorized distributors?

All DMTH10H010LCTB-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH10H010LCTB-13 meets industry standards.

7.What is the process for return or replacement of DMTH10H010LCTB-13?

All DMTH10H010LCTB-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH10H010LCTB-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH10H010LCTB-13 part is unused and in its original packaging.

Return procedure for DMTH10H010LCTB-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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