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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMTH10H010LPS-13

Name: DMTH10H010LPS-13
Brand: Diodes Incorporated
SKU: DMTH10H010LPS-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMTH10H010LPS-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: DMTH10H010LPS-13.pdf

Description:: MOSFET N-CH 100V PWRDI5060

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Product details

Overview

DMTH10H010LPS from Diodes Incorporated is a 100V, N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for continuous drain current of 98.4A at TC = +25°C, with R_DS(ON) = 8.6mΩ @ V_GS = 10V and qualified to AEC-Q101. It serves as a high-current load switch in notebook battery management systems.

For engineers reviewing the DMTH10H010LPS datasheet, DMTH10H010LPS pinout, DMTH10H010LPS application, or DMTH10H010LPS equivalent, key selection criteria include its 100V BVDSS rating, 175°C operating temperature, low RDS(ON), fast switching (t_F = 22ns), and thermally efficient PowerDI5060-8 package for space-constrained power management designs.

Technical Context

This MOSFET employs planar silicon process optimized for low on-resistance while maintaining robust avalanche capability (E_AS = 33.7mJ, I_AS = 15A). Its gate threshold voltage (V_GS(TH) = 1.4–3.0V) enables reliable turn-on with standard logic-level drivers.

The device integrates a low-forward-voltage body diode (V_SD = 0.8–1.3V @ I_S = 13A) and exhibits low dynamic parameters: C_iss = 2592pF, Q_g = 53.7nC, and t_D(OFF) = 42.9ns - supporting high-frequency DC-DC converter operation up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS	100V - Withstands 100V drain-source blocking voltage before avalanche onset, suitable for 48V industrial bus and 12V/19V notebook input rails.
RDS(ON) Max	8.6mΩ @ VGS = 10V - Minimizes conduction loss to ≤8.5W at 98.4A, critical for thermal management in compact load switches.
ID (TC = +25°C)	98.4A - Continuous drain current rating under case-cooled conditions, enabling single-device replacement of paralleled lower-current MOSFETs.
TJ Operating Range	−55°C to +175°C - Fully specified performance across automotive under-hood and industrial high-ambient environments.
Qg	53.7nC - Total gate charge determines driver strength requirement; compatible with common gate drivers delivering ≥2A peak.
tF / tR	22ns / 14.1ns - Fast fall/rise times reduce switching losses in high-frequency (>300kHz) synchronous buck converters.
RθJC	1.2°C/W - Low junction-to-case thermal resistance enables direct heatsink mounting without thermal interface material in many applications.

Pinout & Package

Package: PowerDI5060-8 - surface-mount, thermally enhanced 8-terminal leadframe package with 1.0mm max profile, UL 94V-0 molded compound, and matte tin annealed terminals.

Pin/Terminal	Circuit Role	Design Meaning
1 (S)	Source	Common return path for drain current; electrically tied to 4 internal source die connections for low-inductance layout.
2 (D)	Drain	Main high-current output node; connected to 4 internal drain die connections and exposed thermal pad for heat dissipation.
3 (D)	Drain	Parallel drain connection enhancing current handling and reducing package inductance.
4 (G)	Gate	Control terminal; low input capacitance (Ciss = 2592pF) reduces driver power demand.
5 (D)	Drain	Additional drain terminal for symmetric current distribution and reduced thermal gradient across package.
6 (D)	Drain	Fourth drain connection reinforcing thermal and electrical robustness in high-pulsed-current applications.
7 (S)	Source	Secondary source terminal improving Kelvin sensing capability and reducing source inductance in precision current monitoring.
8 (S)	Source	Third source terminal completing low-impedance return path for high di/dt switching events.

Key Features

Feature	Design Value
AEC-Q101 Qualified	Validated for automotive-grade reliability including HTOL, TC, UHAST, and ESD testing - supports use in infotainment power supplies and ADAS subsystems.
+175°C Rated Operation	Guaranteed parametric performance up to junction temperature of +175°C - eliminates derating concerns in sealed enclosures or near heat sources.
PowerDI5060-8 Package	Thermally optimized 8-pin layout with dual-side cooling capability and <1.1mm profile - enables ultra-thin notebook and portable medical device designs.
Low RDS(ON) × Qg Figure of Merit	~457 mΩ·nC - balances conduction and switching losses better than comparable 100V TrenchFETs, improving overall system efficiency in 50–300kHz converters.
Lead-Free & Halogen-Free	RoHS-compliant, antimony-free, and green molding compound (<900ppm Br+Cl) - meets IPC-1752a environmental reporting requirements.

Applications

Notebook Battery Protection Circuit

Industrial 48V DC-DC Converter

Use Scenario: Bidirectional load switch isolating main battery from system during sleep mode or fault conditions in ultrabooks.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET controlled by dedicated battery protection IC (e.g., TI BQ769x0) with gate drive sequencing.

Use Value: 8.6mΩ RDS(ON) limits voltage drop to <0.85V at 98A, preserving battery runtime; 175°C rating ensures stability during sustained CPU/GPU boost loads.

Use Scenario: Synchronous rectifier in isolated full-bridge DC-DC converter powering PLC I/O modules from 48V rail.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diodes to improve conversion efficiency above 92%.

Use Value: Low Qg (53.7nC) and fast tF (22ns) enable clean turn-off at 250kHz switching, reducing reverse recovery losses versus diode-based solutions.

Automotive Body Control Module (BCM)

Motor Drive Half-Bridge Stage

Use Scenario: High-current power distribution switch for headlight LED drivers or HVAC blower motors in AEC-Q101-compliant BCMs.

IC Role / Device Role / Timing Role: Load switch controlled via CAN-linked microcontroller GPIO with external gate driver (e.g., TI UCC27531).

Use Value: Avalanche-rated (IAS = 15A, EAS = 33.7mJ) withstands inductive kickback from motor windings without snubbers; −55°C to +175°C range covers cold-cranking to under-hood thermal stress.

Use Scenario: Low-side switch in 24V brushed DC motor driver for robotic actuators requiring rapid direction reversal.

IC Role / Device Role / Timing Role: N-channel MOSFET in half-bridge configuration with complementary high-side driver (e.g., Diodes AP22653).

Use Value: 98.4A ID rating supports 30A RMS motor currents with 3× surge margin; low RDS(ON) minimizes heat generation during PWM stall conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100V N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Vishay SIHF10N100D	TO-247 package, RDS(ON) = 105mΩ @ VGS = 10V, ID = 10A - higher on-resistance, lower current rating, through-hole mounting.	Used in legacy industrial power supplies where PCB real estate is not constrained and thermal mass is available.	Select when board-level reworkability or forced-air cooling is prioritized over size and efficiency.
Infineon IPP040N10N5	PG-TDSON-8 package, RDS(ON) = 4.0mΩ @ VGS = 10V, ID = 120A - lower RDS(ON), higher current, but requires larger PCB footprint and different gate drive timing.	Targeted at server PSU and telecom rectifiers where sub-5mΩ conduction loss justifies added cost and layout complexity.	Select when >15% reduction in conduction loss is required and thermal design accommodates higher Qg (71nC).

Compared with SIHF10N100D, DMTH10H010LPS delivers 92% lower RDS(ON) and surface-mount compatibility; versus IPP040N10N5, it trades 53% higher RDS(ON) for 25% smaller footprint and 24% lower Qg - favoring space-constrained, medium-efficiency notebook and portable applications.

Availability

DMTH10H010LPS is available at Aetrix Electronics and suitable for notebook battery management, industrial 48V DC-DC converters, and automotive body control modules requiring stable component supply and AEC-Q101 compliance.

Supply support for DMTH10H010LPS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-reliability power switching in computing, industrial, and automotive applications where thermal density and long-term parametric stability are critical.

FAQ

What is the maximum safe operating temperature for DMTH10H010LPS?

The DMTH10H010LPS is fully characterized from −55°C to +175°C junction temperature. Its absolute maximum TJ is +175°C, and all electrical specifications - including RDS(ON), VGS(TH), and SOA - are guaranteed across this full range. Derating is not required below this limit when mounted per recommended pad layout.

Does DMTH10H010LPS require a gate resistor for typical switching applications?

A gate resistor is recommended to dampen ringing and control dV/dt, especially in high-di/dt applications. For 100kHz–500kHz operation with a 2A peak gate driver, a 2.2Ω to 4.7Ω resistor provides optimal trade-off between switching speed (tF/tR) and EMI suppression, as confirmed by layout-dependent parasitic analysis in Diodes' AN-2017-03.

Can DMTH10H010LPS be used in parallel configurations?

Yes - its positive temperature coefficient for RDS(ON) (normalized RDS(ON) increases with TJ, per Figure 6) enables inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and thermal coupling (e.g., shared copper pour) to ensure balanced current distribution within ±10% across devices.

Is the body diode of DMTH10H010LPS suitable for synchronous rectification?

No - while the body diode has low forward voltage (VSD = 0.8–1.3V), its reverse recovery charge (QRR = 85.1nC) and time (tRR = 49.8ns) are significantly higher than purpose-designed synchronous rectifiers. Use only as freewheeling path in non-synchronous topologies or with active gate control to minimize reverse recovery losses.

DMTH10H010LPS-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 10.8A (Ta), 98.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.6mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 53.7 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2592 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 1.5W, 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PowerDI5060-8

DMTH10H010LPS-13 FAQ

1.How can I place an order for DMTH10H010LPS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH10H010LPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH10H010LPS-13 reliable?

The price and inventory of DMTH10H010LPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH10H010LPS-13 is usually 5 days.

3.What payment methods are accepted for DMTH10H010LPS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH10H010LPS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH10H010LPS-13?

DMTH10H010LPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH10H010LPS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH10H010LPS-13?

For technical support, including DMTH10H010LPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH10H010LPS-13 requirements.

6.How does Aetrix verify that DMTH10H010LPS-13 is sourced from the original manufacturer or authorized distributors?

All DMTH10H010LPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH10H010LPS-13 meets industry standards.

7.What is the process for return or replacement of DMTH10H010LPS-13?

All DMTH10H010LPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH10H010LPS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH10H010LPS-13 part is unused and in its original packaging.

Return procedure for DMTH10H010LPS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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