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Diodes Incorporated DMTH10H010SPSWQ-13
- Part No.:
- DMTH10H010SPSWQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH10H010SPSWQ-13.pdf
- Description:
- MOSFET BVDSS: 61V~100V POWERDI50
- Quantity:
- Payment:
- Shipping:
Inventory:7,776
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Product details
Overview
DMTH10H010SPSWQ-13 from Diodes Incorporated is a 100V, N-channel enhancement-mode MOSFET in PowerDI5060-8/SWP package, rated for 100A continuous drain current at TC = +25°C, with RDS(ON) = 6.6 mΩ (typ) @ VGS = 10V and AEC-Q101 qualified for automotive load switching. It delivers low conduction loss and robust unclamped inductive switching (EAS = 307 mJ @ L = 3 mH) in high-temperature battery management systems.
For engineers reviewing the DMTH10H010SPSWQ-13 datasheet, DMTH10H010SPSWQ-13 pinout, DMTH10H010SPSWQ-13 application, or DMTH10H010SPSWQ-13 equivalent, key selection criteria include its 175°C junction rating, 0.9°C/W RθJC, 56.4 nC total gate charge, and validated performance in automotive-grade DC-DC converters and notebook battery protection circuits.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low RDS(ON) while maintaining fast switching (tF = 29.5 ns, tD(OFF) = 44.8 ns) and high avalanche ruggedness. Its internal structure integrates an optimized body diode with VSD = 0.8 V (typ) @ IS = 13 A and tRR = 54.5 ns, enabling efficient synchronous rectification and reverse recovery handling.
The device operates across –55°C to +175°C junction temperature range and supports gate drive voltages from 6 V to 10 V, with VGS(TH) = 2–4 V and tight threshold distribution. Its PowerDI5060-8/SWP package features an exposed drain pad for low thermal resistance (RθJC = 0.9°C/W) and solderable matte tin terminals compliant with MIL-STD-202.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Withstands up to 100 V drain-source blocking voltage without breakdown, suitable for 48 V automotive bus and industrial power rails. |
| RDS(ON) | 6.6 mΩ (typ) @ VGS = 10 V - Enables <1 W conduction loss at 13 A, critical for high-efficiency load switches and OR-ing circuits. |
| ID (continuous) | 100 A @ TC = +25°C - Sustains high-current operation when mounted on heatsinked PCBs or metal-core substrates. |
| EAS | 307 mJ @ L = 3 mH - Guarantees reliable energy absorption during inductive turn-off transients in motor drivers and solenoid controls. |
| Qg | 56.4 nC - Determines gate driver power requirement; enables efficient 100 kHz+ switching with moderate gate drive strength. |
| TJ max | +175°C - Supports operation in under-hood automotive environments and sealed industrial enclosures without derating. |
| RθJC | 0.9°C/W - Allows direct thermal path from junction to heatsink via exposed drain pad, reducing thermal bottleneck in high-power designs. |
Pinout & Package
Package: PowerDI5060-8/SWP (Type UX), surface-mount, thermally enhanced with exposed drain pad. Molded green compound (UL 94V-0), moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S (Source) | Current return path for main channel | Connected to system ground or low-side reference; 4 pins tied internally for low-inductance source connection. |
| D (Drain) | Main current output / high-side switch node | Exposed copper pad (8 pins total) forms primary thermal and electrical path to PCB heatsink; handles full load current. |
| G (Gate) | Control input for channel modulation | Single terminal accepting 6–10 V logic-level drive; low Ciss = 4468 pF minimizes Miller effect during switching. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive applications including battery disconnect, start-stop systems, and e-fuse modules per IATF 16949 manufacturing. |
| 100% UIS tested | Every unit screened for unclamped inductive switching robustness-ensures field reliability in motor control and relay replacement. |
| Low RDS(ON) vs. temperature stability | RDS(ON) increases only 1.9× from 25°C to 175°C @ VGS = 10 V, minimizing thermal runaway risk in sustained high-load conditions. |
| Green, RoHS-compliant construction | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb); matte tin annealed terminals ensure MIL-STD-202 solderability. |
Applications
| Battery Protection Circuit | Automotive Load Switch |
|---|---|
|
Use Scenario: Isolating 12–48 V Li-ion battery packs from downstream loads during fault conditions or sleep mode. IC Role / Device Role / Timing Role: High-side power switch controlling main battery discharge path; activated/deactivated by microcontroller GPIO. Use Value: 8.8 mΩ RDS(ON) limits voltage drop to <0.88 V at 100 A, preserving battery runtime and enabling precise overcurrent detection. |
Use Scenario: Controlling power delivery to infotainment head units, ADAS cameras, or HVAC actuators in vehicles. IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relays; driven by CAN/LIN-controlled PMIC or discrete logic. Use Value: 175°C rating allows placement near engine bays or power inverters; 307 mJ EAS prevents failure during load dump or inductive kickback. |
| DC-DC Converter High-Side Switch | Notebook Power Path Management |
|
Use Scenario: Primary switching element in 48 V–12 V buck converters for server PSUs and telecom rectifiers. IC Role / Device Role / Timing Role: Synchronous rectifier or high-side FET in multiphase topologies operating at 200–500 kHz. Use Value: 56.4 nC Qg and 29.5 ns tF enable efficient high-frequency operation with minimal switching loss and gate drive overhead. |
Use Scenario: OR-ing diode replacement and adaptive power path selection between AC adapter and battery in ultrabooks. IC Role / Device Role / Timing Role: Bidirectional load switch managing charging/discharging paths under system power management IC control. Use Value: Low VSD = 0.8 V (typ) body diode reduces reverse conduction loss during adapter plug-in/out transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB180N10N5LF | 100 V, 180 A, RDS(ON) = 3.8 mΩ @ 10 V; TO-263-7 package; higher current but larger footprint and 1.2°C/W RθJC. | Preferred for >150 A industrial motor drives where board space permits larger package and thermal interface is less constrained. | Select when peak current exceeds 120 A and thermal design accommodates TO-263 mounting; not drop-in due to pinout and layout mismatch. |
| STL220N6F7 | 60 V, 220 A, RDS(ON) = 1.4 mΩ @ 10 V; PowerFLAT 5x6 package; lower voltage rating, higher current, lower RDS(ON). | Suitable for 48 V data center PDUs and AI accelerator power stages requiring sub-2 mΩ conduction loss. | Only viable if system bus voltage ≤60 V; incompatible for 100 V applications like commercial vehicle 24/48 V systems. |
Compared with IPB180N10N5LF and STL220N6F7, DMTH10H010SPSWQ-13 offers optimal balance of 100 V rating, AEC-Q101 compliance, compact PowerDI5060-8 footprint, and 0.9°C/W thermal resistance-making it uniquely suited for space-constrained, high-reliability automotive and portable power applications.
Availability
DMTH10H010SPSWQ-13 is available at Aetrix Electronics and suitable for automotive battery management, notebook power path control, and industrial DC-DC converter designs requiring stable component supply, long-term lifecycle support, and PPAP-ready documentation.
Supply support for DMTH10H010SPSWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.
This MOSFET belongs to Diodes' Automotive-Qualified PowerMOS family, engineered specifically for high-temperature, high-current switching in safety-critical vehicle subsystems and portable electronics with stringent thermal and reliability requirements.
FAQ
What is the maximum allowable gate-source voltage for DMTH10H010SPSWQ-13?
The absolute maximum VGS is ±20 V per datasheet DS46015 Rev. 1–2. Operation above ±15 V risks gate oxide degradation; recommended drive is 10 V for full RDS(ON) optimization and 6 V for logic-level compatibility. Gate drive must include series resistance to limit dV/dt-induced ringing.
Does DMTH10H010SPSWQ-13 require a gate resistor, and what value is recommended?
Yes-a gate resistor is required to control switching speed and suppress oscillation. For 100 kHz operation with 13 A load, a 6 Ω resistor (as used in datasheet dynamic test conditions) balances EMI, switching loss, and gate driver stress. Lower values increase dI/dt and EMI; higher values slow turn-on and raise conduction loss.
How is thermal performance affected when the exposed drain pad is not soldered to a copper plane?
Without soldering the exposed drain pad to ≥1 in² 2 oz copper, RθJA degrades from 49°C/W to >100°C/W, limiting continuous current to <15 A at room ambient. Full 100 A rating requires thermal connection to PCB heatsink or external metal core; thermal vias under the pad improve heat transfer by 20–30%.
Is DMTH10H010SPSWQ-13 suitable for reverse polarity protection in 24 V automotive systems?
Yes-its 100 V VDSS provides 4× margin over 24 V nominal, and its body diode forward voltage (VSD = 0.8 V typ) ensures low-loss reverse conduction during fault events. When used in high-side configuration with gate driven by charge pump, it achieves <10 mΩ effective resistance in protected direction.
DMTH10H010SPSWQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 15A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.8mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 56.4 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4468 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Ta), 166W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerDI5060-8 (Type UX)
DMTH10H010SPSWQ-13 FAQ
1.How can I place an order for DMTH10H010SPSWQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH10H010SPSWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH10H010SPSWQ-13 reliable?
The price and inventory of DMTH10H010SPSWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH10H010SPSWQ-13 is usually 5 days.
3.What payment methods are accepted for DMTH10H010SPSWQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH10H010SPSWQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH10H010SPSWQ-13?
DMTH10H010SPSWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH10H010SPSWQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH10H010SPSWQ-13?
For technical support, including DMTH10H010SPSWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH10H010SPSWQ-13 requirements.
6.How does Aetrix verify that DMTH10H010SPSWQ-13 is sourced from the original manufacturer or authorized distributors?
All DMTH10H010SPSWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH10H010SPSWQ-13 meets industry standards.
7.What is the process for return or replacement of DMTH10H010SPSWQ-13?
All DMTH10H010SPSWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH10H010SPSWQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH10H010SPSWQ-13 part is unused and in its original packaging.
Return procedure for DMTH10H010SPSWQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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