Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMTH10H015LK3-13

Part No.:
DMTH10H015LK3-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixDMTH10H015LK3-13.pdf
Description:
MOSFET N-CH 100V 52.5A TO252
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,856

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMTH10H015LK3-13 from Diodes Incorporated is a 100V, N-channel enhancement-mode MOSFET in TO252 (DPAK) package, rated for continuous drain current up to 52.5A at TC = +25°C, with RDS(ON) of 15mΩ @ VGS = 10V and qualified to AEC-Q101 for automotive-grade reliability. It operates up to +175°C junction temperature and supports high-efficiency DC-DC converters and backlighting power stages.

For engineers reviewing the DMTH10H015LK3-13 datasheet, DMTH10H015LK3-13 pinout, DMTH10H015LK3-13 application, or DMTH10H015LK3-13 equivalent, key selection criteria include its 100V VDSS, low 15mΩ on-resistance at 10V gate drive, 33.3nC total gate charge, 100% unclamped inductive switching rating, and thermal resistance of 2°C/W (junction-to-case).

Technical Context

This MOSFET employs planar silicon process technology optimized for low RDS(ON) and fast switching in high-current, high-temperature power conversion topologies. Its gate threshold voltage range (1.4–3.5V) enables compatibility with standard 3.3V/5V/10V logic-level drivers, while its 100% UIS-rated ruggedness ensures robust operation under inductive load transients.

The device features a thermally enhanced DPAK package with direct die-to-case thermal path (RθJC = 2°C/W), enabling high-power dissipation in compact layouts. Its dynamic parameters-including Ciss = 1871pF, QG = 33.3nC, and tF = 8.1ns-support efficient hard-switched and synchronous rectifier applications up to several hundred kHz.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS100V - Supports input rails up to 80V DC-DC converters with margin for voltage spikes
RDS(ON)15mΩ @ VGS = 10V - Enables <1.5W conduction loss at 40A, critical for thermal management
ID (continuous)52.5A @ TC = +25°C - Sustains high output current in buck converter high-side switches
QG33.3nC - Determines gate driver power requirement and switching speed trade-off
TJ max+175°C - Allows operation in under-hood automotive or industrial enclosures without derating
RθJC2°C/W - Enables direct heatsinking to PCB copper or external metal, reducing thermal bottleneck
UIS Rating100% unclamped inductive switching - Eliminates need for external snubbers in flyback or motor drive circuits

Pinout & Package

Package: TO252 (DPAK), surface-mount, thermally enhanced plastic case with exposed drain pad for direct PCB thermal conduction.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminalLow-side reference node; connects to ground or low-side switch node in half-bridge
Pin 2 (Gate)Control inputReceives PWM signal; requires 10V drive for full RDS(ON) specification
Pin 3 (Drain)High-side power outputConnects to input rail; large copper area required for thermal and current handling
Exposed Pad (Drain)Thermal & electrical drain connectionMust be soldered to ≥1-inch² 2oz copper pour for rated PD = 3.5W performance

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated for automotive power systems including engine control and ADAS modules
+175°C operating temperatureEnables deployment in high-ambient environments such as LED headlight drivers or industrial motor controllers
Low QG/QGD ratioQGD/QG ≈ 15% - Improves Miller immunity and reduces risk of shoot-through in bridge configurations
Halogen- and antimony-free "Green" constructionMeets EU RoHS 2 and automotive environmental compliance requirements (Br+Cl <1500ppm, Sb <1000ppm)
100% UIS testedGuarantees survival under worst-case inductive energy dump without external protection

Applications

Automotive DC-DC ConvertersLED Backlight Drivers

Use Scenario: Step-down conversion from 12V/48V battery to 3.3V/5V for infotainment and instrument cluster supplies.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET in multiphase buck regulator.

Use Value: Low RDS(ON) and +175°C rating maintain efficiency and reliability across vehicle thermal cycles.

Use Scenario: Constant-current LED string regulation in automotive center console and ambient lighting.

IC Role / Device Role / Timing Role: Switching element in boost or buck-boost LED driver topology.

Use Value: Fast turn-off (tF = 8.1ns) and low QG enable high-frequency PWM dimming with minimal switching loss.

Industrial Power SuppliesServer VRMs

Use Scenario: Primary-side switch in isolated offline SMPS for factory automation I/O modules.

IC Role / Device Role / Timing Role: High-voltage MOSFET in flyback or forward converter primary switch.

Use Value: 100V VDSS and 100% UIS rating ensure robustness against reflected transients in unregulated AC/DC front-ends.

Use Scenario: High-current phase-leg switch in multi-phase CPU/GPU voltage regulator modules.

IC Role / Device Role / Timing Role: Low-side FET in synchronous buck stage delivering >100A per phase.

Use Value: Exposed drain pad and RθJC = 2°C/W allow direct mounting to VRM heatsink, improving thermal headroom at 52.5A.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPB180N10N3 GRDS(ON) = 10.5mΩ @ 10V, higher ID = 180A, larger TO263 package, RθJC = 1.2°C/WBetter suited for >100A industrial inverters where board space allows larger footprintSelect when higher current and lower thermal resistance outweigh cost and size constraints
DMTH10H015LQ-13Same die, AEC-Q101 qualified variant with automotive-specific traceability and test flowRequired for production automotive ECUs; identical electrical specs but different lot control and documentationChoose for automotive OEM programs requiring PPAP and ASIL-ready supply chain

Compared with IPB180N10N3 G and DMTH10H015LQ-13, the DMTH10H015LK3-13 offers optimal balance of compact DPAK form factor, 52.5A capability, and industrial-grade reliability-making it ideal for space-constrained, high-temperature power stages where automotive certification is not mandated.

Availability

DMTH10H015LK3-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, LED backlight drivers, and industrial power supplies requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for DMTH10H015LK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.

The DMTH series targets high-efficiency, high-temperature power switching applications, with design focus on low RDS(ON), rugged UIS performance, and AEC-Q101 compliance for mission-critical systems.

FAQ

What is the maximum safe operating temperature for DMTH10H015LK3-13?

The device is rated for junction temperatures from –55°C to +175°C, with guaranteed electrical performance across this full range. Thermal design must ensure TJ does not exceed +175°C under worst-case ambient and power dissipation conditions, using RθJC = 2°C/W and appropriate PCB copper area per datasheet layout guidelines.

Can DMTH10H015LK3-13 be driven directly by a 3.3V microcontroller GPIO?

No-its gate threshold voltage ranges from 1.4V to 3.5V, but RDS(ON) is only specified at VGS = 4.5V, 6V, and 10V. At 3.3V, RDS(ON) exceeds 30mΩ (estimated), causing excessive conduction loss. A dedicated gate driver or level shifter is required for reliable switching.

Is the exposed drain pad electrically isolated from other pins?

No-the exposed pad is internally connected to the drain terminal and must be soldered to a PCB copper pour designated as the drain net. It serves both thermal conduction and electrical connection; isolation would compromise thermal performance and violate the device's mechanical design.

Does DMTH10H015LK3-13 include integrated body diode recovery optimization?

Yes-the datasheet specifies reverse recovery time tRR = 37.9ns and QRR = 51.9nC at IF = 10A and di/dt = 100A/µs, indicating optimized body diode characteristics for synchronous rectification and freewheeling in buck and flyback topologies.

DMTH10H015LK3-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
52.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
33.3 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1871 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
2.1W (Ta)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252-3

DMTH10H015LK3-13 FAQ

1.How can I place an order for DMTH10H015LK3-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH10H015LK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH10H015LK3-13 reliable?

The price and inventory of DMTH10H015LK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH10H015LK3-13 is usually 5 days.

3.What payment methods are accepted for DMTH10H015LK3-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH10H015LK3-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH10H015LK3-13?

DMTH10H015LK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH10H015LK3-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH10H015LK3-13?

For technical support, including DMTH10H015LK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH10H015LK3-13 requirements.

6.How does Aetrix verify that DMTH10H015LK3-13 is sourced from the original manufacturer or authorized distributors?

All DMTH10H015LK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH10H015LK3-13 meets industry standards.

7.What is the process for return or replacement of DMTH10H015LK3-13?

All DMTH10H015LK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH10H015LK3-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH10H015LK3-13 part is unused and in its original packaging.

Return procedure for DMTH10H015LK3-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMTH10H015LK3-13 Tags

  • DMTH10H015LK3-13
  • DMTH10H015LK3-13 PDF
  • DMTH10H015LK3-13 Datasheet
  • DMTH10H015LK3-13 Specifications
  • DMTH10H015LK3-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMTH10H015LK3-13
  • Buy DMTH10H015LK3-13
  • DMTH10H015LK3-13 Price
  • DMTH10H015LK3-13 Distributor
  • DMTH10H015LK3-13 Supplier
  • DMTH10H015LK3-13 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER