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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMTH10H015SK3-13

Name: DMTH10H015SK3-13
Brand: Diodes Incorporated
SKU: DMTH10H015SK3-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMTH10H015SK3-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: DMTH10H015SK3-13.pdf

Description:: MOSFET BVDSS: 61V~100V TO252 T&R

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Product details

Overview

DMTH10H015SK3-13 from Diodes Incorporated is a 100V, N-channel enhancement-mode MOSFET in TO252 (DPAK) package, rated for continuous drain current of 59A at TC = +25°C, with R_DS(ON) = 14 mΩ @ V_GS = 10V and 20 mΩ @ V_GS = 6V. It supports high-temperature operation up to +175°C and delivers robust unclamped inductive switching (IAS = 15.8 A, EAS = 12.5 mJ), making it suitable for automotive-grade DC-DC converters and power-management circuits.

For engineers reviewing the DMTH10H015SK3-13 datasheet, DMTH10H015SK3-13 pinout, DMTH10H015SK3-13 application, or DMTH10H015SK3-13 equivalent, key selection criteria include its low gate charge (Q_g = 30.1 nC), fast switching times (t_D(ON) = 9.8 ns, t_F = 9.6 ns), and thermal resistance R_θJC = 2 °C/W - critical for high-power density and thermally constrained designs.

Technical Context

This MOSFET employs planar trench-gate technology optimized for low conduction and switching losses. Its gate threshold voltage (V_GS(TH) = 2–4 V) enables reliable turn-on with standard logic-level drivers, while its low output capacitance (C_oss = 487 pF @ V_DS = 50 V) supports high-frequency operation in synchronous buck topologies.

The device integrates a body diode with V_SD = 0.86–1.3 V @ I_S = 20 A and reverse recovery charge Q_RR = 65.1 nC, enabling efficient freewheeling in hard-switched converters. Its JEDEC-qualified construction (per AEC-Q standards) ensures mechanical and thermal reliability under repeated thermal cycling and high ambient stress.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Withstands up to 100 V drain-source blocking voltage without breakdown, suitable for 48 V input systems and industrial 24–72 V rails.
R_DS(ON)	14 mΩ @ V_GS = 10 V - Enables <1.4 W conduction loss at 50 A, reducing heatsink requirements in high-current power stages.
I_D (max)	59 A @ T_C = +25°C - Supports high-output current in compact TO252 packages when mounted on adequate copper area.
Q_g	30.1 nC - Low total gate charge minimizes driver power demand and improves efficiency in 100–500 kHz switching applications.
R_θJC	2 °C/W - Enables direct thermal path from junction to PCB copper pad, allowing >70 W power dissipation with proper heatsinking.
T_J max	+175°C - Rated for sustained operation in engine bay, industrial motor drives, and other high-ambient environments.
E_AS	12.5 mJ @ L = 0.1 mH - Confirmed avalanche energy rating ensures ruggedness during transient overloads and inductive kickback events.

Pinout & Package

Package: TO252 (DPAK), surface-mount, with exposed drain pad for thermal and electrical connection. Molded plastic housing meets UL 94V-0 flammability rating and RoHS/lead-free/Green compliance.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main current-carrying terminal connected to internal MOSFET channel and exposed metal pad	Primary thermal path and high-current return node; must be soldered to large copper pour for heat dissipation and low-inductance routing.
G (Gate)	Control electrode for channel modulation	High-impedance input requiring low-inductance gate drive trace; sensitive to ringing due to low C_iss/C_rss ratio (2343 pF / 26 pF).
S (Source)	Reference node for gate drive and current sensing	Common return for load current and gate driver ground; layout must minimize source inductance to preserve switching speed and prevent oscillation.

Key Features

Feature	Design Value
+175°C operating temperature rating	Enables deployment in under-hood automotive modules and industrial inverters where ambient exceeds 125°C without derating or forced cooling.
100% unclamped inductive switching (UIS) tested	Validated avalanche robustness eliminates need for external snubbers in flyback or boost converters handling inductive loads.
Low Q_g (30.1 nC) and low C_rss (26 pF)	Reduces Miller-induced turn-on risk and enables clean, fast switching with minimal gate driver overhead in high-frequency SMPS.
RoHS-compliant, halogen- and antimony-free "Green" construction	Meets global environmental regulations (EU RoHS 3, JIS C 0950) and supports sustainable manufacturing and end-of-life recycling.
JEDEC-qualified per AEC-Q standards	Validated for automotive reliability including HTOL, TC, HAST, and bond wire pull tests - suitable for safety-critical subsystems.

Applications

Automotive DC-DC Converters

Industrial Motor Drive Half-Bridge

Use Scenario: Step-down conversion from 48 V battery to 12 V auxiliary rail in EV/HEV power distribution units.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in 200–300 kHz buck converter, operating continuously at 50 A load with peak junction temperature ≤150°C.

Use Value: Low R_DS(ON) and R_θJC reduce thermal margin constraints, enabling smaller heatsinks and higher power density than legacy 20 mΩ DPAK MOSFETs.

Use Scenario: Upper switch in three-phase inverter half-bridge stage driving 1–3 kW PMSM motors in HVAC compressors or pumps.

IC Role / Device Role / Timing Role: Fast-switching, high-current switching element with body diode conducting freewheeling current during dead-time intervals.

Use Value: Confirmed UIS rating and low Q_RR (65.1 nC) suppress voltage overshoot and reduce switching losses during commutation, improving system efficiency by ≥1.2% at full load.

Telecom 48 V Intermediate Bus Converter

LED Backlight Power Supply

Use Scenario: Primary-side switch in isolated forward or active-clamp forward converter delivering 20–40 A at 5–12 V for base station power shelves.

IC Role / Device Role / Timing Role: Main power switch operating at 250 kHz with V_DS stress up to 85 V during transient line surges.

Use Value: 100 V BVDSS and low C_oss (487 pF) maintain ZVS capability and reduce capacitive switching loss, extending converter efficiency above 95% across 20–100% load range.

Use Scenario: Boost-stage switch in LCD TV backlight inverter supplying 30–60 V to series-connected LED strings.

IC Role / Device Role / Timing Role: High-efficiency, low-noise switching transistor in 300–500 kHz boost topology with tight EMI constraints.

Use Value: Low gate charge and fast turn-off (t_F = 9.6 ns) minimize switching noise and enable compact EMI filter design, meeting CISPR-22 Class B limits without shielding.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL130N10F7	R_DS(ON) = 9.5 mΩ @ V_GS = 10 V; Q_g = 42 nC; TO263 package	Higher current rating (130 A) but larger footprint and higher gate drive requirement	Select when higher current headroom and lower R_DS(ON) outweigh board space and driver strength constraints.
IXTP110N10T	R_DS(ON) = 11.5 mΩ @ V_GS = 10 V; Q_g = 48 nC; TO220 package	Through-hole mounting, higher thermal resistance (R_θJC = 1.2 °C/W), no automotive qualification	Select for prototyping or non-automotive industrial use where through-hole assembly and manual heatsinking are preferred.

Compared with STL130N10F7 and IXTP110N10T, DMTH10H015SK3-13 offers optimal balance of low gate charge, automotive qualification, and compact DPAK footprint - ideal for space-constrained, high-reliability 48–100 V power stages where thermal performance and EMI control are prioritized over absolute minimum R_DS(ON).

Availability

DMTH10H015SK3-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and telecom intermediate bus converters requiring stable component supply and long-term lifecycle support.

Supply support for DMTH10H015SK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' high-voltage, high-temperature power portfolio designed specifically for automotive and industrial power conversion - emphasizing ruggedness, thermal stability, and regulatory compliance.

FAQ

What is the maximum safe operating temperature for DMTH10H015SK3-13?

The device is rated for continuous operation up to +175°C junction temperature, verified via JEDEC AEC-Q stress testing. At T_C = +100°C, its continuous drain current is derated to 42 A. Thermal design must ensure junction temperature remains below this limit using the specified R_θJC = 2 °C/W and appropriate PCB copper area.

Does DMTH10H015SK3-13 require a gate resistor for stable switching?

Yes - a gate resistor (typically 2–10 Ω) is recommended to dampen ringing caused by parasitic inductance and the device's low C_rss/C_iss ratio. The datasheet specifies t_D(ON) and t_F test conditions with R_g = 6 Ω; omitting it risks shoot-through, oscillation, or gate driver overstress in high-di/dt applications.

Is the body diode suitable for synchronous rectification?

No - the integrated body diode has V_SD = 0.86–1.3 V and Q_RR = 65.1 nC, making it inefficient for synchronous rectification. This MOSFET is intended as a controlled switch; external Schottky or FET-based synchronous rectifiers are required for high-efficiency secondary-side conduction.

How does DMTH10H015SK3-13 differ from the automotive-grade DMTH10H015SK3Q?

DMTH10H015SK3Q is the AEC-Q200 qualified variant with enhanced screening (including extended temperature cycling and bias-HAST), while DMTH10H015SK3-13 is the commercial-grade version. Both share identical electrical specs and package, but only the Q suffix part carries full automotive qualification documentation and lot-level traceability for safety-critical systems.

DMTH10H015SK3-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 59A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 14mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30.1 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2343 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252 (DPAK)

DMTH10H015SK3-13 FAQ

1.How can I place an order for DMTH10H015SK3-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH10H015SK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH10H015SK3-13 reliable?

The price and inventory of DMTH10H015SK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH10H015SK3-13 is usually 5 days.

3.What payment methods are accepted for DMTH10H015SK3-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH10H015SK3-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH10H015SK3-13?

DMTH10H015SK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH10H015SK3-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH10H015SK3-13?

For technical support, including DMTH10H015SK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH10H015SK3-13 requirements.

6.How does Aetrix verify that DMTH10H015SK3-13 is sourced from the original manufacturer or authorized distributors?

All DMTH10H015SK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH10H015SK3-13 meets industry standards.

7.What is the process for return or replacement of DMTH10H015SK3-13?

All DMTH10H015SK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH10H015SK3-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH10H015SK3-13 part is unused and in its original packaging.

Return procedure for DMTH10H015SK3-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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