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Diodes Incorporated DMTH10H015SK3Q-13
- Part No.:
- DMTH10H015SK3Q-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
DMTH10H015SK3Q-13.pdf
- Description:
- MOSFET BVDSS: 61V~100V TO252 T&R
- Quantity:
- Payment:
- Shipping:
Inventory:5,379
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Product details
Overview
DMTH10H015SK3Q-13 from Diodes Incorporated is an AEC-Q101-qualified 100V N-channel enhancement-mode MOSFET in TO252 (DPAK) package, delivering 14 mΩ RDS(ON) at VGS = 10 V and 59 A continuous drain current at TC = +25°C. It operates up to +175°C junction temperature and supports unclamped inductive switching for automotive power-management and DC-DC converter applications.
For engineers reviewing the DMTH10H015SK3Q-13 datasheet, DMTH10H015SK3Q-13 pinout, DMTH10H015SK3Q-13 application, or DMTH10H015SK3Q-13 equivalent, key selection criteria include its 100V BVDSS rating, low 30.1 nC total gate charge, 2 °C/W RθJC, AEC-Q101 qualification, and TO252 thermal performance under high-ambient conditions.
Technical Context
This MOSFET employs a planar trench-gate structure optimized for low conduction and switching losses in automotive-grade high-voltage switching nodes. Its 100% UIS-rated ruggedness ensures reliability in inductive load transients common in motor drivers and DC-DC controllers.
The device features a 2 Ω gate resistance and 26 pF reverse transfer capacitance (Crss), enabling fast, controllable turn-on/turn-off with minimal Miller-induced oscillation. Its normalized RDS(ON) variation remains ≤1.8× across –55°C to +175°C, supporting stable operation in engine bay and powertrain environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVDSS | 100 V - Withstands 100 V drain-source blocking voltage before avalanche onset; suitable for 48 V automotive systems with transient margin. |
| RDS(ON) Max | 14 mΩ @ VGS = 10 V - Enables <1.4 W conduction loss at 20 A, critical for thermally constrained power stages. |
| ID (TC = +25°C) | 59 A - Continuous current capability with heatsink; defines maximum steady-state output in buck converters or load switches. |
| Qg Total | 30.1 nC - Determines gate drive power and switching speed; enables efficient 100–500 kHz operation with standard gate drivers. |
| RθJC | 2 °C/W - Junction-to-case thermal resistance confirms direct thermal path via exposed drain pad; enables precise heatsink sizing. |
| TJ Operating Range | –55°C to +175°C - Full automotive temperature range compliance; supports under-hood placement without derating. |
| EAS (L = 0.1 mH) | 12.5 mJ - Energy-handling capacity during single-pulse inductive switching; validates robustness in solenoid or relay drive. |
Pinout & Package
Package: TO252 (DPAK), surface-mount, with exposed drain pad for thermal and electrical connection. Molded green compound, UL 94V-0 rated, lead-free and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal; requires ≥2 V threshold to initiate conduction; driven by PWM controller or gate driver IC. |
| Pin 2 (S) | Source | Reference node for gate drive; tied to power ground or low-side return path in half-bridge topologies. |
| Pin 3 (D) | Drain | Main power output; electrically and thermally connected to exposed copper pad; routed to high-side or load connection. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified & PPAP capable | Validated for automotive production use with full change control, IATF 16949 manufacturing, and traceable lot documentation. |
| 100% Unclamped Inductive Switching (UIS) | Rated for repetitive energy absorption up to 12.5 mJ (L = 0.1 mH); eliminates need for external snubbers in relay/solenoid drivers. |
| Low RDS(ON) × Qg figure of merit | 14 mΩ × 30.1 nC = 421 mΩ·nC - Balances conduction and switching loss for high-efficiency 48 V–100 V DC-DC stages. |
| +175°C maximum junction temperature | Enables operation in engine compartment, transmission control units, and battery disconnect modules without thermal throttling. |
| Green, RoHS-compliant construction | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb); compliant with EU RoHS 3 and automotive environmental standards. |
Applications
| Automotive DC-DC Converters | Engine Control Unit (ECU) Power Switching |
|---|---|
Use Scenario: Step-down conversion from 48 V battery to 12 V auxiliary rail in mild-hybrid vehicles. IC Role / Device Role / Timing Role: High-side synchronous rectifier in buck converter topology, switching at 250 kHz. Use Value: 14 mΩ RDS(ON) minimizes conduction loss at 30 A load; 175°C rating avoids thermal shutdown during sustained acceleration. |
Use Scenario: High-current fuel injector driver with inductive kickback suppression. IC Role / Device Role / Timing Role: Low-side switch controlling 12 V injector coil; handles 5 A peak current with 100 µs pulse width. Use Value: 100% UIS rating absorbs 12.5 mJ flyback energy without clamping diode; eliminates external TVS and reduces BOM count. |
| Automotive LED Backlight Drivers | On-Board Charger (OBC) Auxiliary Power Supply |
Use Scenario: Constant-current dimming control for instrument cluster backlighting in wide-temperature cabins. IC Role / Device Role / Timing Role: PWM-controlled current sink for 24 V LED strings, operating at 1 kHz with 10%–100% duty cycle. Use Value: Stable RDS(ON) over –40°C to +85°C ambient ensures consistent brightness; low Qg enables clean PWM edges. |
Use Scenario: Isolated auxiliary supply powering gate drivers and MCU in 11 kW OBC systems. IC Role / Device Role / Timing Role: Primary-side switch in flyback converter, operating at 100 kHz with 600 V reflected voltage. Use Value: 100 V BVDSS provides 2× margin over 400 V DC-link transients; 2 °C/W RθJC enables compact heatsink design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL135N10F7AG | 100 V, 1.8 mΩ @ 10 V, 135 A ID - lower RDS(ON) but larger D²PAK-7 package and higher Qg (65 nC). | Higher current density suits 48 V bus distribution; less suitable for space-constrained ECU PCBs. | Select when system prioritizes ultra-low conduction loss over board area and gate drive strength. |
| IXTP110N10T | 100 V, 11 mΩ @ 10 V, 110 A ID - TO-220 package, no AEC-Q101 qualification, RθJA = 40 °C/W (no exposed pad). | Limited to industrial or non-safety-critical automotive after-market designs; lacks PPAP support. | Choose only for cost-sensitive prototyping where automotive qualification and thermal performance are not required. |
Compared with STL135N10F7AG and IXTP110N10T, the DMTH10H015SK3Q-13 uniquely balances AEC-Q101 compliance, TO252 thermal efficiency, and mid-range RDS(ON)/Qg for volume automotive power stages where footprint, qualification, and reliability are jointly critical.
Availability
DMTH10H015SK3Q-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, engine control unit (ECU) power switching, and LED backlight drivers requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for DMTH10H015SK3Q-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.
The DMTH10H015SK3Q-13 belongs to Diodes' automotive-qualified power MOSFET product line, engineered specifically for high-temperature, high-ruggedness switching in 12 V–48 V vehicle subsystems including powertrain, body electronics, and ADAS power supplies.
FAQ
What is the maximum allowable gate-source voltage for DMTH10H015SK3Q-13?
The absolute maximum gate-source voltage is ±20 V per the datasheet's Maximum Ratings table. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be limited to +10 V to +15 V for full enhancement and –5 V to –10 V for fast turn-off, avoiding Miller plateau instability.
Does DMTH10H015SK3Q-13 include an integrated body diode, and what is its forward voltage?
Yes, it features a parasitic body diode with typical forward voltage of 0.86 V at 20 A and 25°C (VSD), rising to ~1.1 V at 175°C. This diode supports freewheeling in synchronous rectification and inductive load commutation but is not optimized for continuous conduction mode.
How is thermal performance validated for DMTH10H015SK3Q-13 on FR-4 PCBs?
Thermal data specifies three mounting conditions: 75 °C/W RθJA on minimal pad layout, 40 °C/W on 1-inch² copper pour, and 2 °C/W RθJC to the exposed drain pad. Validated per JEDEC JESD51-2 and JESD51-14 standards using calibrated IR imaging and transient dual-interface testing.
Is DMTH10H015SK3Q-13 compatible with lead-free reflow profiles?
Yes - it is qualified for standard IPC/JEDEC J-STD-020D Level 1 moisture sensitivity and withstands peak reflow temperatures up to 260°C for 30 seconds. The matte tin annealed finish ensures reliable solder joint formation with SAC305 and SnPb pastes under both convection and vapor-phase reflow.
DMTH10H015SK3Q-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 59A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 14mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30.1 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2343 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252 (DPAK)
DMTH10H015SK3Q-13 FAQ
1.How can I place an order for DMTH10H015SK3Q-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH10H015SK3Q-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH10H015SK3Q-13 reliable?
The price and inventory of DMTH10H015SK3Q-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH10H015SK3Q-13 is usually 5 days.
3.What payment methods are accepted for DMTH10H015SK3Q-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH10H015SK3Q-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH10H015SK3Q-13?
DMTH10H015SK3Q-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH10H015SK3Q-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH10H015SK3Q-13?
For technical support, including DMTH10H015SK3Q-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH10H015SK3Q-13 requirements.
6.How does Aetrix verify that DMTH10H015SK3Q-13 is sourced from the original manufacturer or authorized distributors?
All DMTH10H015SK3Q-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH10H015SK3Q-13 meets industry standards.
7.What is the process for return or replacement of DMTH10H015SK3Q-13?
All DMTH10H015SK3Q-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH10H015SK3Q-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH10H015SK3Q-13 part is unused and in its original packaging.
Return procedure for DMTH10H015SK3Q-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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