Diodes Incorporated DMTH10H015SPS-13
- Part No.:
- DMTH10H015SPS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH10H015SPS-13.pdf
- Description:
- MOSFET N-CH 100V PWRDI5060
- Quantity:
- Payment:

- Shipping:

Inventory:8,890
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Product details
Overview
DMTH10H015SPS-13 from Diodes Incorporated is a 100V, 56A N-channel enhancement-mode MOSFET in PowerDI5060-8 package, optimized for high-efficiency power switching with RDS(ON) = 14.5 mΩ @ VGS = 10V and rated for continuous operation up to +175°C. It delivers robust unclamped inductive switching (UIS) performance and low gate charge (Qg = 30.1 nC), making it suitable for motor control inverters and high-current DC-DC converters in automotive and industrial environments.
For engineers reviewing the DMTH10H015SPS-13 datasheet, DMTH10H015SPS-13 pinout, DMTH10H015SPS-13 application, or DMTH10H015SPS-13 equivalent, key selection criteria include its 100V BVDSS rating, thermally efficient PowerDI5060-8 package with exposed drain pad, 175°C junction temperature capability, and validated UIS ruggedness - all critical for high-reliability power stage design.
Technical Context
This MOSFET employs planar trench-gate technology to achieve low on-resistance while maintaining fast switching (tD(ON) = 9.8 ns, tF = 9.6 ns) and low reverse transfer capacitance (Crss = 26 pF). Its gate threshold voltage (VGS(TH) = 2–4 V) ensures stable turn-on under wide temperature ranges (–55°C to +175°C).
The device integrates a low-forward-voltage body diode (VSD = 0.9–1.3 V @ IS = 20A) with QRR = 65.1 nC and tRR = 43.1 ns, supporting synchronous rectification and hard-switched topologies. Thermal resistance RθJC = 1.6°C/W enables high-power dissipation when mounted on copper thermal pads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVDSS | 100 V - Withstands 100V drain-source blocking voltage before avalanche conduction begins. |
| RDS(ON) | 14.5 mΩ @ VGS = 10V, ID = 20A - Enables <1.5W conduction loss at 56A continuous current with proper heatsinking. |
| ID (TC = 25°C) | 56 A - Maximum continuous drain current achievable with case temperature maintained at 25°C. |
| Qg | 30.1 nC - Total gate charge required for full turn-on; determines driver strength and switching loss trade-off. |
| RθJC | 1.6 °C/W - Junction-to-case thermal resistance; defines minimum thermal interface requirement for 94W power dissipation. |
| TJ Max | +175°C - Maximum allowable junction temperature; supports operation in engine bay or sealed industrial enclosures. |
| EAS | 85 mJ @ L = 3mH - Avalanche energy rating confirms reliability under inductive load switching without snubbers. |
Pinout & Package
Package: PowerDI5060-8 - Thermally enhanced surface-mount package with exposed drain pad (8-terminal, dual-side cooling capable), UL 94V-0 molded compound, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 7, 8 | Drain (D) | Five parallel drain terminals connected to internal die drain metallization and exposed copper pad - primary current path and thermal conduction path to PCB. |
| 4 | Gate (G) | Single gate input terminal; requires ≤±20V drive; low Rg = 0.69 Ω minimizes gate ringing risk. |
| 5, 6 | Source (S) | Two source terminals tied to source metallization; used for Kelvin sensing or low-inductance return routing in high-di/dt applications. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested in production | Guarantees avalanche robustness per JEDEC JESD22-A109; eliminates need for external clamping in motor drive flyback paths. |
| Thermally efficient PowerDI5060-8 | Exposes >80% of die area via bottom-side drain pad; achieves RθJC = 1.6°C/W - 3× better than SO-8 for same footprint. |
| Low Ciss/Crss ratio | Ciss = 2343 pF, Crss = 26 pF - High ratio (>90:1) improves Miller immunity and reduces gate drive losses in hard-switched converters. |
| AEC-Q200 qualified variant available | Automotive-grade version DMTH10H015SPSQ meets stress testing requirements for under-hood electronics (not identical part but functionally aligned). |
| Halogen- and antimony-free | <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - Complies with EU RoHS 3 and automotive green material standards. |
Applications
| Motor Control Inverter | High-Current DC-DC Converter |
|---|---|
|
Use Scenario: Three-phase BLDC motor inverter stage operating at 48V bus, 30kHz PWM, ambient up to 105°C. IC Role / Device Role / Timing Role: High-side/low-side power switch handling peak phase currents ≥45A with minimal conduction loss and thermal rise. Use Value: 14.5 mΩ RDS(ON) and 175°C rating allow direct mounting on aluminum-core PCBs without external heatsinks in compact e-bike controllers. |
Use Scenario: 12V-to-1V VRM for server CPU delivering 300A output using multiphase buck topology. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in high-frequency (500kHz–1MHz), high-di/dt power stage. Use Value: Low Qgd/Qg ratio (6.5/30.1 ≈ 0.22) and fast tF = 9.6 ns reduce cross-conduction loss and improve efficiency above 92%. |
| Industrial Power Supply | Automotive Body Control Module |
|
Use Scenario: 24V input, 400W AC/DC front-end with active PFC and LLC resonant secondary. IC Role / Device Role / Timing Role: Primary-side switching FET in continuous conduction mode (CCM) PFC boost stage. Use Value: 100V BVDSS and 85 mJ EAS support 24V input with 100V transient margin and reliable operation during line surges. |
Use Scenario: Load switch for 12V battery-fed HVAC actuators and seat-motor drivers in passenger compartment. IC Role / Device Role / Timing Role: Protected high-side switch with integrated overtemperature and short-circuit detection (via external controller). Use Value: +175°C rating and AEC-Q200-aligned qualification enable use in non-engine-bay automotive zones where ambient exceeds 105°C. |
Availability
DMTH10H015SPS-13 is available at Aetrix Electronics and suitable for motor control inverters, high-current DC-DC converters, and industrial power supplies requiring stable component supply across extended temperature and high-reliability operational life cycles.
Supply support for DMTH10H015SPS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This MOSFET belongs to Diodes' PowerFET™ portfolio, engineered specifically for high-efficiency, high-temperature power conversion systems in automotive, industrial, and computing applications - emphasizing ruggedness, thermal performance, and production-tested reliability.
FAQ
What is the maximum safe operating junction temperature for DMTH10H015SPS-13?
The absolute maximum junction temperature is +175°C, verified per JEDEC JESD22-A108. Operation at this limit requires strict thermal management: RθJA must be ≤55°C/W and PCB layout must include ≥1-inch² 2oz copper thermal pad connected to the exposed drain. Derating is recommended above 150°C for long-term reliability.
Does DMTH10H015SPS-13 have an integrated body diode, and what are its characteristics?
Yes - it features a monolithic N-channel MOSFET body diode with typical forward voltage VSD = 0.9 V at IS = 20A and TA = 25°C, rising to 1.3 V at 175°C. Reverse recovery charge QRR = 65.1 nC and tRR = 43.1 ns are specified, enabling use in synchronous rectification and freewheeling roles without external Schottky diodes in moderate-frequency designs.
Can DMTH10H015SPS-13 replace TO-252 (DPAK) MOSFETs in existing layouts?
No - PowerDI5060-8 has different footprint dimensions (5.15 × 6.15 mm vs. DPAK's 6.5 × 6.1 mm), pinout (8-pin dual-drain vs. 3-pin), and thermal pad geometry. Direct replacement requires PCB redesign. However, its lower RθJC (1.6 vs. ~3.5°C/W for DPAK) and higher current rating make it a superior upgrade candidate when layout revision is feasible.
Is there a lead-free and halogen-free version of this MOSFET?
Yes - DMTH10H015SPS-13 is fully compliant: matte tin annealed finish over copper leadframe, RoHS 3 (2015/863/EU) compliant, and certified "Green" with <900 ppm bromine, <900 ppm chlorine, and <1000 ppm antimony. No exemptions applied; full compliance is documented in Diodes' material declarations.
DMTH10H015SPS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.4A (Ta), 50.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 14.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30.1 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2343 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta), 55W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8
DMTH10H015SPS-13 FAQ
1.How can I place an order for DMTH10H015SPS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH10H015SPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH10H015SPS-13 reliable?
The price and inventory of DMTH10H015SPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH10H015SPS-13 is usually 5 days.
3.What payment methods are accepted for DMTH10H015SPS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH10H015SPS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH10H015SPS-13?
DMTH10H015SPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH10H015SPS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH10H015SPS-13?
For technical support, including DMTH10H015SPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH10H015SPS-13 requirements.
6.How does Aetrix verify that DMTH10H015SPS-13 is sourced from the original manufacturer or authorized distributors?
All DMTH10H015SPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH10H015SPS-13 meets industry standards.
7.What is the process for return or replacement of DMTH10H015SPS-13?
All DMTH10H015SPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH10H015SPS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH10H015SPS-13 part is unused and in its original packaging.
Return procedure for DMTH10H015SPS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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