Diodes Incorporated DMTH10H015SPSQ-13

Overview

DMTH10H015SPSQ from Diodes Incorporated is an AEC-Q101-qualified 100V N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for continuous drain current of 56A at TC = +25°C, R_DS(ON) = 14.5mΩ @ V_GS = 10V, and operation up to +175°C junction temperature. It is designed for high-reliability automotive power stages including motor control and DC-DC converters.

For engineers reviewing the DMTH10H015SPSQ datasheet, DMTH10H015SPSQ pinout, DMTH10H015SPSQ application, or DMTH10H015SPSQ equivalent, key selection criteria include its 100% production-tested UIS robustness, thermally efficient exposed-drain package, low gate charge (Q_g = 30.1nC), and AEC-Q101 qualification with PPAP support.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(ON) and fast switching in high-temperature automotive environments. Its 1.6°C/W R_θJC enables high-power dissipation via the exposed drain pad, and its 100% UIS testing ensures survivability under inductive load transients.

The device features gate threshold voltage (V_GS(TH)) of 2–4V, reverse transfer capacitance (C_rss) of 26pF, and diode forward voltage (V_SD) of 0.9–1.3V at 20A - parameters critical for synchronous rectification and bidirectional current handling in compact power modules.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 - Thermally enhanced surface-mount package with exposed drain pad for direct PCB copper thermal coupling; UL 94V-0 molded compound; moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with STL220N10F7AG and IXTQ1N100P, DMTH10H015SPSQ delivers optimal balance of current density (56A in 5.1×6.1mm), thermal performance (1.6°C/W), and gate drive efficiency (30.1nC) for mid-power automotive inverters where space and thermal budget are tightly constrained.

Availability

DMTH10H015SPSQ is available at Aetrix Electronics and suitable for electric power steering, 48V mild hybrid DC-DC converters, and automotive HVAC blower motor control requiring stable component supply across extended vehicle lifecycles.

Supply support for DMTH10H015SPSQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions for automotive, industrial, computing, and consumer markets, with ISO/TS 16949-certified manufacturing facilities.

This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for AEC-Q101-compliant high-temperature switching in safety-critical vehicle subsystems such as steering, braking, and energy conversion.

FAQ

What is the maximum allowable gate-source voltage for DMTH10H015SPSQ?

The absolute maximum V_GS rating is ±20V, as specified in the Maximum Ratings table. Operation beyond this range risks permanent gate oxide damage. For reliable switching, gate drive should be clamped between –5V (to ensure fast turn-off) and +12V (to guarantee full enhancement while staying within safe margin).

Does DMTH10H015SPSQ require a gate resistor, and if so, what value is recommended?

Yes - a gate resistor is required to control dV/dt and suppress ringing. Based on typical gate charge (30.1nC) and target turn-on time (~20ns), a 6Ω resistor is validated in the datasheet (Fig. 11 test condition). For 100–200kHz operation with standard 1A drivers, 4.7–10Ω provides optimal trade-off between switching speed and EMI suppression.

How is thermal performance affected when the exposed drain pad is not soldered to a large copper area?

Without adequate PCB copper (e.g., <1in² 2oz), R_θJA degrades from 55°C/W to >100°C/W, limiting continuous power to <1.5W. The 1.6°C/W R_θJC assumes full thermal connection to the drain pad - insufficient solder coverage or missing thermal vias will cause localized junction overheating and premature failure under 40A loads.

Is the body diode suitable for synchronous rectification in a buck converter?

Yes - the body diode has V_SD = 0.9–1.3V at 20A and t_RR = 43.1ns, making it viable for low-frequency (<100kHz) synchronous rectification. However, for high-frequency ZVS operation, external Schottky diodes may be preferred due to lower forward drop, though the integrated diode eliminates component count and layout complexity.