Diodes Incorporated DMTH10H015SPSWQ-13

Overview

DMTH10H015SPSWQ-13 from Diodes Incorporated is an AEC-Q101 qualified 100V N-channel enhancement-mode MOSFET in PowerDI5060-8/SWP package, delivering 14.5mΩ R_DS(ON) @ V_GS = 10V, 56A continuous drain current at T_C = +25°C, and rated for operation up to +175°C - designed for high-reliability automotive power management and motor control circuits.

For engineers reviewing the DMTH10H015SPSWQ-13 datasheet, DMTH10H015SPSWQ-13 pinout, DMTH10H015SPSWQ-13 application, or DMTH10H015SPSWQ-13 equivalent, key selection criteria include its 1.6°C/W R_θJC, 100% production-tested UIS robustness, low Q_g (30.1nC), and thermally optimized exposed-drain PowerDI5060-8/SWP footprint.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss while maintaining fast switching (t_D(ON) = 9.8ns, t_F = 9.6ns) and low gate charge (Q_gd = 6.5nC). Its design supports hard-switched topologies with minimal Miller effect due to Cr_ss = 26pF and C_iss = 2343pF at V_DS = 50V.

The device integrates a robust body diode with t_RR = 43.1ns and Q_RR = 65.1nC, enabling efficient synchronous rectification and freewheeling in DC-DC converters. Thermal performance is anchored by a copper lead-frame with exposed drain pad and R_θJC = 1.6°C/W, enabling high-power density mounting on thermally enhanced PCBs.

Key Specifications

Pinout & Package

Package: PowerDI5060-8/SWP (Type UX), surface-mount, thermally enhanced with exposed drain pad. Molded green compound (UL 94V-0), matte tin annealed terminals, MSL Level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL220N6LF8AG and IXTP110N10T, DMTH10H015SPSWQ-13 uniquely balances 100V ruggedness, AEC-Q101 compliance, and surface-mount thermal efficiency - making it optimal for production automotive power stages where voltage margin, qualification, and board space are jointly constrained.

Availability

DMTH10H015SPSWQ-13 is available at Aetrix Electronics and suitable for automotive electronic power steering, 48V DC-DC conversion, and industrial BLDC motor control requiring stable component supply across multi-year production cycles.

Supply support for DMTH10H015SPSWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' Automotive Power MOSFET product line, engineered specifically for high-temperature, high-reliability automotive subsystems including EPS, HVAC, and battery management - emphasizing AEC-Q101 qualification, UIS robustness, and thermally optimized packaging.

FAQ

What is the maximum allowable gate-source voltage for DMTH10H015SPSWQ-13?

The absolute maximum V_GS is ±20V per datasheet DS46014 Rev. 2–2. Operation beyond ±20V risks irreversible gate oxide damage. For reliable 10V logic-level drive, a 12V gate supply with 10Ω series resistor is recommended to limit peak current during turn-on and suppress ringing from the device's 0.69Ω intrinsic gate resistance.

Does DMTH10H015SPSWQ-13 require a gate resistor, and if so, what value is recommended?

Yes - a gate resistor is required to control dV/dt and prevent oscillation. Based on measured R_g = 0.69Ω and typical gate drive strength, a 6–10Ω external resistor provides optimal trade-off between switching speed (t_D(ON) ≈ 10ns) and gate ring suppression. Values below 5Ω increase risk of overshoot; above 15Ω unnecessarily slows turn-on and increases switching loss.

How is thermal performance validated for this MOSFET in automotive applications?

Thermal validation uses R_θJC = 1.6°C/W measured from junction to solder point on the exposed drain pad, verified per JESD51-14. In practice, with 4 thermal vias (0.3mm diameter) under the drain pad connected to 2oz inner-layer copper, junction temperature rise remains ≤45°C at 56A continuous current - meeting AEC-Q101 thermal stress requirements for 175°C operation.

Is the body diode suitable for synchronous rectification in a 48V buck converter?

Yes - the integrated body diode has t_RR = 43.1ns and Q_RR = 65.1nC at I_F = 10A, enabling efficient synchronous operation up to 300kHz. Its V_SD = 0.9V (typ) at 20A reduces forward conduction loss versus external Schottky diodes, and the 100% UIS qualification ensures survivability during reverse recovery faults.