Diodes Incorporated DMTH10H017LPD-13

Overview

DMTH10H017LPD from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in PowerDI5060-8 (Type E) package, rated for 100V V_DSS, 17.4 mΩ R_DS(ON) @ 10V, and continuous 59A drain current at T_C = +25°C. It operates up to +175°C junction temperature and is qualified per AEC-Q standards for automotive-grade reliability. Used as primary-side switch or synchronous rectifier in high-efficiency DC-DC converters.

For engineers reviewing the DMTH10H017LPD datasheet, DMTH10H017LPD pinout, DMTH10H017LPD application, or DMTH10H017LPD equivalent, key selection criteria include its dual-channel layout, low R_DS(ON) at 4.5V (30.3 mΩ), 100% production-tested UIS robustness, and thermal performance validated to 175°C ambient operation.

Technical Context

This dual N-channel MOSFET integrates two independent high-voltage switching cells in a single thermally optimized PowerDI5060-8 package with exposed drain pads for low R_θJC (1.6°C/W). Its gate threshold voltage (1–3 V) supports TTL- and logic-level drive, while fast switching (t_r = 16.3 ns, t_f = 21.6 ns) minimizes conduction and switching losses in hard-switched topologies.

The device features low input capacitance (C_iss = 1986 pF) and reverse transfer capacitance (C_rss = 20 pF), enabling stable operation in high-frequency (>500 kHz) power stages. Its body diode exhibits t_RR = 40.6 ns and Q_RR = 58.1 nC, supporting efficient synchronous rectification without external Schottky supplementation.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 (Type E), surface-mount, thermally enhanced with dual exposed drain pads (D1/D2) and eight terminals. Molded green compound (UL 94V-0), matte tin annealed finish over copper leadframe.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMTH10H017LPDQ, the base part lacks formal PPAP documentation but delivers identical performance and reliability; versus IPB80N06S4-02, it trades lower R_DS(ON) for higher voltage rating and 40% smaller board area-critical for space-constrained 48V–100V power stages.

Availability

DMTH10H017LPD is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and server VRMs requiring stable component supply and long-term lifecycle assurance.

Supply support for DMTH10H017LPD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.

This device belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-reliability power conversion in automotive, industrial, and computing applications where thermal resilience and avalanche robustness are mandatory.

FAQ

What is the maximum continuous drain current per channel at T_C = +100°C?

The DMTH10H017LPD supports 42 A continuous drain current per channel at case temperature +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerDI5060-8 package and ensures safe operation without exceeding 175°C junction temperature under typical PCB copper pour conditions.

Is the body diode suitable for synchronous rectification without external compensation?

Yes-the body diode has t_RR = 40.6 ns and Q_RR = 58.1 nC at I_F = 17A, enabling clean zero-voltage switching in synchronous buck topologies up to 1 MHz. No external Schottky diode is needed when gate timing accounts for reverse recovery delay.

Does this MOSFET require gate resistors for stability in high-frequency operation?

A gate resistor of 10–22 Ω is recommended to dampen ringing caused by L_g–C_iss resonance, especially above 500 kHz. The device's low C_rss (20 pF) and R_g (1.17 Ω) minimize Miller effect, but external resistance ensures robust turn-on/turn-off control with standard gate drivers.

Can both channels be paralleled for higher current capacity?

No-channels are electrically isolated with separate sources (S1/S2) and gates (G1/G2); paralleling requires matched gate drive, current-sharing resistors, and thermal coupling. For higher current, use dual-phase interleaving instead of direct paralleling to avoid imbalance-induced thermal runaway.