Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMTH10H017LPDQ-13

Part No.:
DMTH10H017LPDQ-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
8-PowerTDFN
Datasheet:
AetrixDMTH10H017LPDQ-13.pdf
Description:
MOSFET 2N-CH 100V 13A PWRDI50
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,435

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMTH10H017LPDQ-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in PowerDI5060-8 (Type E) package, rated for 100V VDSS, 17.4mΩ RDS(ON) @ 10V VGS, and 59A continuous drain current at TC = +25°C. It serves as a high-efficiency synchronous rectifier or primary-side switch in automotive DC-DC converters operating up to +175°C junction temperature.

For engineers reviewing the DMTH10H017LPDQ-13 datasheet, DMTH10H017LPDQ-13 pinout, DMTH10H017LPDQ-13 application, or DMTH10H017LPDQ-13 equivalent, key selection criteria include AEC-Q101 qualification, dual-channel thermal coupling in a single exposed-drain package, 100% production UIS testing, and low gate charge (28.6nC @ 10V) for fast switching in high-frequency power stages.

Technical Context

This device integrates two matched N-channel MOSFETs in a thermally optimized PowerDI5060-8 package with shared exposed drain pads, enabling symmetrical current sharing and minimized thermal resistance (RθJC = 1.6°C/W). Its gate threshold voltage (1–3V) and low input capacitance (Ciss = 1986pF) support robust 4.5V logic-level drive while maintaining stable operation across -55°C to +175°C.

The dual topology supports independent gate control for synchronous buck/boost topologies or paralleled operation in high-current rails. Avalanche energy rating (EAS = 150mJ @ L = 3mH) and body diode reverse-recovery charge (QRR = 58.1nC) are specified for hard-switched inductive loads common in automotive power conversion.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 100V - Withstands up to 100V drain-source blocking voltage without breakdown, suitable for 48V automotive systems and 12V/24V primary-side switching.
RDS(ON) @ 10V 17.4mΩ max - Minimizes conduction loss in high-current paths; enables ≤1.0W dissipation at 25A per channel under typical conditions.
ID (TC = 25°C) 59A - Continuous drain current rating per channel when mounted on infinite heatsink, supporting >100W power delivery per device.
Qg @ 10V 28.6nC - Total gate charge determines driver strength requirement; enables <33ns turn-on delay with 11Ω gate resistor.
TJ Range -55°C to +175°C - Fully qualified for under-hood automotive environments; no derating required up to maximum junction temperature.
EAS 150mJ @ L = 3mH - Guaranteed avalanche energy ensures reliability during inductive load switching transients without external snubbers.
Ciss 1986pF - Input capacitance impacts gate drive loop stability and switching speed; compatible with standard gate drivers at ≤1MHz switching frequencies.

Pinout & Package

Package: PowerDI5060-8 (Type E), surface-mount, thermally enhanced with dual exposed drain pads (D1/D2) and 8-terminal configuration. Molded green compound (UL 94V-0), matte tin annealed terminals, moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (S1) Source of Channel 1 Low-side return path for first MOSFET; electrically isolated from S2 but thermally coupled via shared leadframe.
Pin 2 (D2) Drain of Channel 2 Exposed copper pad - primary thermal path to PCB; must be soldered to large copper area for RθJC = 1.6°C/W performance.
Pin 3 (D1) Drain of Channel 1 Exposed copper pad - second thermal path; symmetric layout enables balanced thermal distribution between channels.
Pin 4 (G2) Gate of Channel 2 High-impedance control terminal; requires <28.6nC charge for full enhancement; sensitive to ESD (±20V rating).
Pin 5 (D1) Drain of Channel 1 (redundant marking) Same node as Pin 3 - confirms dual-drain physical layout; not electrically distinct.
Pin 6 (D2) Drain of Channel 2 (redundant marking) Same node as Pin 2 - confirms dual-drain physical layout; not electrically distinct.
Pin 7 (G1) Gate of Channel 1 Independent control input; allows asynchronous or interleaved switching with G2 for reduced EMI.
Pin 8 (S2) Source of Channel 2 Low-side return path for second MOSFET; electrically isolated from S1 but thermally coupled via shared leadframe.

Key Features

Feature Design Value
AEC-Q101 qualified & PPAP capable Validated for automotive production use with full change control, IATF 16949 manufacturing, and zero defect screening.
100% production UIS tested Every unit undergoes unclamped inductive switching stress test, ensuring robustness against real-world inductive fault events.
175°C maximum junction temperature Enables direct placement near heat sources (e.g., engine control units) without thermal throttling or external cooling.
Low Qgd/Qgs ratio (8.2nC / 5.2nC) Reduces Miller plateau duration, improving immunity to dv/dt-induced false turn-on in high-side configurations.
Halogen- and antimony-free "Green" construction Meets RoHS 3 (2015/863/EU) with Br+Cl <1500ppm and Sb <1000ppm - compliant for global automotive supply chains.

Applications

Automotive DC-DC Converters Synchronous Rectification

Use Scenario: 12V-to-48V bidirectional converter in mild-hybrid vehicles with peak currents ≥40A per phase.

IC Role / Device Role / Timing Role: Dual-channel primary-side switch handling high-side and low-side switching in interleaved buck-boost topology.

Use Value: 17.4mΩ RDS(ON) reduces conduction loss by ≥22% vs. comparable 25mΩ devices, directly improving system efficiency by 1.3% at 30A load.

Use Scenario: Secondary-side rectification in isolated 48V server PSUs requiring >95% efficiency at full load.

IC Role / Device Role / Timing Role: Dual N-channel synchronous rectifier replacing Schottky diodes in center-tapped or LLC resonant output stage.

Use Value: Body diode forward voltage (0.8–1.3V) and low QRR (58.1nC) minimize reverse-recovery losses, reducing secondary-side temperature rise by 18°C vs. discrete diodes.

On-Board Charger (OBC) Input Stage Electric Power Steering (EPS) Motor Drive

Use Scenario: AC/DC PFC front-end in 6.6kW OBC where MOSFETs switch at 65–100kHz with 30A RMS current.

IC Role / Device Role / Timing Role: Dual-channel boost switch with independent gate control for phase interleaving and current balancing.

Use Value: Matched RDS(ON) tracking (<±5%) between channels ensures equal current sharing, eliminating need for external current-sense resistors.

Use Scenario: Three-phase inverter half-bridge stage in EPS motor control, operating continuously at 150°C ambient.

IC Role / Device Role / Timing Role: High-side and low-side switch pair per phase leg, leveraging shared thermal path for consistent channel matching.

Use Value: 175°C rating eliminates derating at 150°C ambient, maintaining full 45A current capability (VGS = 4.5V) without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IXTP30N10D2 Single-channel TO-220 device (30A, 100V, 30mΩ); no dual topology or exposed drain thermal path. Requires two separate packages and PCB area; lacks AEC-Q101 qualification and 175°C rating. Select only if discrete mounting and legacy TO-220 footprint are mandatory; not suitable for space-constrained automotive modules.
STL220N6LF8AG Single-channel PowerFLAT 5x6 (220A, 60V, 1.2mΩ); lower voltage rating, higher current, no dual configuration. Cannot replace dual-channel function without circuit redesign; incompatible with 100V systems like 48V architectures. Use only in 48V or lower systems where ultra-low RDS(ON) outweighs dual-channel functionality and automotive qualification needs.

Compared with IXTP30N10D2 and STL220N6LF8AG, DMTH10H017LPDQ-13 uniquely delivers dual-channel integration, AEC-Q101 compliance, and 100V/175°C operation in a thermally optimized surface-mount package-enabling compact, reliable, and production-ready automotive power stages without compromise.

Availability

DMTH10H017LPDQ-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, on-board chargers, and electric power steering systems requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-compliant traceability.

Supply support for DMTH10H017LPDQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.

This device belongs to Diodes' Automotive Power MOSFET product line, engineered specifically for high-temperature, high-reliability switching in electrified vehicle subsystems including 48V architectures, battery management, and ADAS power domains.

FAQ

What is the maximum allowable gate-source voltage for DMTH10H017LPDQ-13?

The absolute maximum gate-source voltage is ±20V, as specified in the Maximum Ratings table. Operation beyond this range risks permanent gate oxide damage. For reliable 4.5V logic-level drive, the gate threshold voltage (1–3V) ensures full enhancement while maintaining noise margin against spurious turn-on.

How does the dual-channel configuration affect thermal performance?

Both channels share a common thermally conductive leadframe with dual exposed drain pads (Pins 2 and 3), achieving RθJC = 1.6°C/W per channel. This design allows simultaneous high-current operation without thermal crosstalk-induced derating-unlike stacked-die alternatives-verified by transient thermal resistance curves (Figure 13).

Is DMTH10H017LPDQ-13 suitable for hard-switched ZVS or ZCS topologies?

Yes-the device's 100% production UIS testing, 150mJ avalanche energy rating, and low QRR (58.1nC) make it suitable for hard-switched flyback, forward, and resonant LLC topologies where body diode conduction and recovery occur. Its 10A IAS rating supports safe inductive energy absorption during zero-voltage switching transitions.

What PCB layout practices maximize thermal performance?

Maximum thermal performance requires soldering both exposed drain pads (Pins 2 and 3) to ≥1-inch² copper areas on inner or outer layers, using ≥6 thermal vias per pad (0.3mm diameter, filled with solder). The recommended pad layout (Document DS41602, Page 7) specifies 3.98mm D3 dimension and 1.27mm pitch for optimal thermal transfer and mechanical reliability.

DMTH10H017LPDQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
13A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs:
17.4mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
28.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
1986pF @ 50V
Power - Max:
1.5W (Ta), 93W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PowerDI5060-8 (Type E)

DMTH10H017LPDQ-13 FAQ

1.How can I place an order for DMTH10H017LPDQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH10H017LPDQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH10H017LPDQ-13 reliable?

The price and inventory of DMTH10H017LPDQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH10H017LPDQ-13 is usually 5 days.

3.What payment methods are accepted for DMTH10H017LPDQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH10H017LPDQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH10H017LPDQ-13?

DMTH10H017LPDQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH10H017LPDQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH10H017LPDQ-13?

For technical support, including DMTH10H017LPDQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH10H017LPDQ-13 requirements.

6.How does Aetrix verify that DMTH10H017LPDQ-13 is sourced from the original manufacturer or authorized distributors?

All DMTH10H017LPDQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH10H017LPDQ-13 meets industry standards.

7.What is the process for return or replacement of DMTH10H017LPDQ-13?

All DMTH10H017LPDQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH10H017LPDQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH10H017LPDQ-13 part is unused and in its original packaging.

Return procedure for DMTH10H017LPDQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMTH10H017LPDQ-13 Tags

  • DMTH10H017LPDQ-13
  • DMTH10H017LPDQ-13 PDF
  • DMTH10H017LPDQ-13 Datasheet
  • DMTH10H017LPDQ-13 Specifications
  • DMTH10H017LPDQ-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMTH10H017LPDQ-13
  • Buy DMTH10H017LPDQ-13
  • DMTH10H017LPDQ-13 Price
  • DMTH10H017LPDQ-13 Distributor
  • DMTH10H017LPDQ-13 Supplier
  • DMTH10H017LPDQ-13 Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER