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Diodes Incorporated DMTH10H025LK3Q-13
- Part No.:
- DMTH10H025LK3Q-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
DMTH10H025LK3Q-13.pdf
- Description:
- MOSFET N-CH 100V 51.7A TO252 T&R
- Quantity:
- Payment:
- Shipping:
Inventory:6,410
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Product details
Overview
DMTH10H025LK3Q-13 from Diodes Incorporated is an AEC-Q101-qualified 100V N-channel enhancement-mode MOSFET in TO252 (DPAK) package, delivering 22 mΩ RDS(ON) at VGS = 10 V and 51.7 A continuous drain current at TC = +25°C. It operates up to +175°C junction temperature and supports automotive power-management, DC-DC converters, and LED backlighting with 100% unclamped inductive switching capability.
For engineers reviewing the DMTH10H025LK3Q-13 datasheet, DMTH10H025LK3Q-13 pinout, DMTH10H025LK3Q-13 application, or DMTH10H025LK3Q-13 equivalent, key selection criteria include its 100V BVDSS rating, low 21.4 mΩ RDS(ON) @ 6 V gate drive, 21 nC total gate charge, AEC-Q101 qualification, and thermal resistance of 1.5°C/W (junction-to-case).
Technical Context
This MOSFET employs a trench-gate silicon process optimized for high-voltage automotive switching. Its 100% UIS-rated ruggedness ensures reliable operation under inductive load transients, while low QG (21 nC) and QGD (3.8 nC) enable efficient high-frequency PWM control in DC-DC stages.
The device features a body diode with 1.3 V forward voltage at 20 A and 38.7 ns reverse-recovery time, supporting synchronous rectification and freewheeling functions. Thermal design is enabled by the exposed drain pad in TO252, providing direct thermal path with RθJC = 1.5°C/W.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVDSS | 100 V - Withstands 100 V drain-source blocking voltage, suitable for 48 V automotive bus and 24 V industrial systems. |
| RDS(ON) @ VGS=10V | 22 mΩ max - Enables <1.1 W conduction loss at 51.7 A, reducing heatsink requirements in high-current power stages. |
| ID (TC=25°C) | 51.7 A - Continuous drain current rating at case temperature 25°C, defining maximum steady-state output capability. |
| QG | 21 nC - Total gate charge determines driver strength requirement and switching energy loss in hard-switched topologies. |
| TJ Operating Range | –55°C to +175°C - Supports under-hood automotive environments and high-temperature industrial enclosures without derating. |
| RθJC | 1.5°C/W - Junction-to-case thermal resistance enables precise thermal modeling when mounted on heatsink or copper plane. |
| UIS Rating | 100% unclamped inductive switching - Validated avalanche energy of 12.5 mJ at IAS = 15.8 A, eliminating need for external snubbers. |
Pinout & Package
Package: TO252 (DPAK), surface-mount, with exposed drain pad for thermal and electrical connection. Molded green compound, RoHS-compliant, halogen-free, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main current-carrying terminal, connected to exposed metal pad | Primary heat dissipation path and high-side/low-side switch node; requires soldered thermal pad area per Diodes' recommended layout. |
| Gate (G) | Control input for channel conduction | High-impedance MOS gate requiring <3.8 nC QGD to transition through Miller plateau; sensitive to ESD and ringing. |
| Source (S) | Reference terminal for gate drive and current return path | Low-inductance source connection critical for stable switching; ties to ground or low-side shunt in half-bridge configurations. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified & PPAP capable | Validated for automotive production use with full change control, IATF 16949 manufacturing, and traceable lot documentation. |
| 100% UIS rated | Guaranteed avalanche robustness up to 12.5 mJ enables reliable operation in inductive load switching without external protection. |
| Low RDS(ON) @ 6 V drive | 30 mΩ max at VGS = 6 V supports gate drive from standard 5 V or 6 V controllers without level-shifting. |
| 175°C maximum junction temperature | Enables compact thermal design in space-constrained automotive modules where ambient exceeds 125°C. |
| Green, halogen-free construction | Meets EU RoHS 3 and automotive environmental compliance with <900 ppm Br/Cl and <1000 ppm Sb. |
Applications
| Automotive Power Management | 48 V DC-DC Converters |
|---|---|
|
Use Scenario: High-side switch in battery disconnect and load-dump protection circuits for ADAS ECUs. IC Role / Device Role / Timing Role: N-channel high-side MOSFET controlled via gate driver IC, handling 50 A peak loads with fast turn-off to prevent overvoltage events. Use Value: 100% UIS rating absorbs inductive energy during sudden load removal, eliminating need for TVS clamping and reducing BOM count. |
Use Scenario: Primary-side switch in 48 V-to-12 V buck converter for vehicle infotainment and lighting subsystems. IC Role / Device Role / Timing Role: Low-RDS(ON) power switch operating at 200–500 kHz PWM frequency with gate charge optimized for minimal switching loss. Use Value: 21 nC QG and 3.8 nC QGD reduce driver power consumption and improve efficiency above 95% at 40 A output. |
| LED Backlight Drivers | Electric Power Steering (EPS) Motor Control |
|
Use Scenario: Constant-current dimming switch in LCD display backlight units for instrument clusters and center displays. IC Role / Device Role / Timing Role: Low-side PWM switch modulating LED strings with 100 Hz–20 kHz duty-cycle control. Use Value: 22 mΩ RDS(ON) minimizes conduction loss at 3–5 A per string, enabling thermally efficient 100% brightness operation at 125°C ambient. |
Use Scenario: Half-bridge leg in 3-phase inverter driving brushless EPS motor with regenerative braking. IC Role / Device Role / Timing Role: High-reliability switching element subjected to repetitive avalanche stress during motor phase commutation and fault conditions. Use Value: 15.8 A IAS and 12.5 mJ EAS withstand repeated inductive flyback without degradation, extending field lifetime beyond 15 years. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL135N10F7 | Lower RDS(ON) (1.35 mΩ typ), but only rated to +150°C TJ and not AEC-Q101 qualified. | Not approved for safety-critical automotive systems requiring PPAP; limited to industrial or non-automotive 48 V systems. | Select when higher current density and lower conduction loss are prioritized over automotive qualification and high-temp operation. |
| IXTP110N10T | Higher RDS(ON) (11 mΩ min), TO-220 package, no AEC-Q101 qualification, RθJC = 1.0°C/W. | Lacks automotive change control and thermal cycling validation; unsuitable for under-hood deployment. | Choose only for prototyping or cost-sensitive non-automotive applications where surface-mount assembly is not required. |
Compared with STL135N10F7 and IXTP110N10T, the DMTH10H025LK3Q-13 uniquely combines AEC-Q101 qualification, +175°C operation, TO252 surface-mount compatibility, and validated UIS performance-making it the sole option for production-grade automotive power stages demanding both reliability and thermal headroom.
Availability
DMTH10H025LK3Q-13 is available at Aetrix Electronics and suitable for automotive power management, 48 V DC-DC conversion, and LED backlighting applications requiring stable component supply across multi-year production cycles.
Supply support for DMTH10H025LK3Q-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.
This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for AEC-Q101-compliant high-voltage switching in engine control, ADAS, and electrified vehicle subsystems.
FAQ
What is the maximum gate-source voltage rating for DMTH10H025LK3Q-13?
The absolute maximum gate-source voltage (VGSS) is ±20 V. Exceeding this rating risks permanent gate oxide damage. Recommended operating range is –12 V to +15 V for robust switching, with transient spikes limited to ±20 V per datasheet Section "Maximum Ratings."
Does DMTH10H025LK3Q-13 require a gate resistor for stability?
Yes-a gate resistor (typically 5–20 Ω) is required to dampen ringing caused by gate loop inductance and Miller capacitance. The datasheet specifies tD(ON) = 6.3 ns and tD(OFF) = 16.7 ns with RG = 6 Ω, confirming that external gate resistance directly controls switching speed and EMI.
Can DMTH10H025LK3Q-13 be used in synchronous rectification?
Yes-the integrated body diode has VSD = 1.3 V at 20 A and tRR = 38.7 ns, enabling synchronous rectification in buck converters. However, optimal performance requires external gate control to actively turn on the MOSFET during freewheeling, bypassing the body diode.
Is the TO252 footprint compatible with standard DPAK PCB land patterns?
Yes-the device uses industry-standard TO252 (DPAK) dimensions with 6.10 mm × 6.58 mm body and 5.33 mm wide drain pad. Diodes provides exact pad layout recommendations (Document DS40359, Page 6), including 5.21 mm × 5.21 mm thermal pad and 0.783 mm lead width for reliable reflow soldering.
DMTH10H025LK3Q-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 51.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 22mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 21 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1477 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252 (DPAK)
DMTH10H025LK3Q-13 FAQ
1.How can I place an order for DMTH10H025LK3Q-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH10H025LK3Q-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH10H025LK3Q-13 reliable?
The price and inventory of DMTH10H025LK3Q-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH10H025LK3Q-13 is usually 5 days.
3.What payment methods are accepted for DMTH10H025LK3Q-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH10H025LK3Q-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH10H025LK3Q-13?
DMTH10H025LK3Q-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH10H025LK3Q-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH10H025LK3Q-13?
For technical support, including DMTH10H025LK3Q-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH10H025LK3Q-13 requirements.
6.How does Aetrix verify that DMTH10H025LK3Q-13 is sourced from the original manufacturer or authorized distributors?
All DMTH10H025LK3Q-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH10H025LK3Q-13 meets industry standards.
7.What is the process for return or replacement of DMTH10H025LK3Q-13?
All DMTH10H025LK3Q-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH10H025LK3Q-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH10H025LK3Q-13 part is unused and in its original packaging.
Return procedure for DMTH10H025LK3Q-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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