Diodes Incorporated DMTH10H025LPS-13

Overview

DMTH10H025LPS from Diodes Incorporated is a 100V, 45A N-channel enhancement-mode MOSFET in PowerDI5060-8 package, optimized for high-efficiency load switching and synchronous rectification with R_DS(ON) = 18 mΩ (typ) at V_GS = 10 V and rated for continuous operation up to +175°C junction temperature. It serves as a primary-side switch in DC-DC converters and battery power management circuits in notebooks and industrial power supplies.

For engineers reviewing the DMTH10H025LPS datasheet, DMTH10H025LPS pinout, DMTH10H025LPS application, or DMTH10H025LPS equivalent, key selection criteria include its 100% unclamped inductive switching rating, low gate charge (Q_g = 21 nC), fast turn-off delay (t_D(OFF) = 16.7 ns), thermal robustness at +175°C, and compliance with AEC-Q reliability standards for automotive-grade variants.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low R_DS(ON) while maintaining fast switching performance and rugged avalanche capability (E_AS = 96 mJ at L = 3 mH). Its gate threshold voltage (V_GS(TH) = 1–3 V) ensures reliable turn-on with standard logic-level drivers.

The device features an integrated body diode with low forward voltage (V_SD = 0.9–1.3 V at I_S = 20 A) and controlled reverse recovery (Q_RR = 53.7 nC), enabling efficient synchronous rectification without external Schottky diodes in medium-power DC-DC topologies.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 - Thermally enhanced surface-mount package with exposed drain pad for low R_θJC = 1.9°C/W and high power density (79 W at T_C = +25°C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMTH10H025LPSQ, the base part offers identical performance for non-automotive use with faster time-to-market and lower procurement cost; versus IPB180N10N3 G, it delivers superior power density and gate drive efficiency in space-constrained 45 A designs despite slightly lower absolute current rating.

Availability

DMTH10H025LPS is available at Aetrix Electronics and suitable for notebook power management, industrial load switching, and server DC-DC converter designs requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for DMTH10H025LPS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.

The DMTH10H025LPS belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, high-temperature power conversion in compact form factors-targeting applications where thermal headroom, switching speed, and ruggedness are co-critical.

FAQ

What is the maximum continuous drain current at +100°C case temperature?

The DMTH10H025LPS supports 32 A continuous drain current at T_C = +100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerDI5060-8 package's 1.9°C/W R_θJC, not device degradation-performance remains fully specified within this limit.

Does the device require a gate resistor for stability in hard-switching applications?

Yes-a 5–10 Ω series gate resistor is recommended to dampen ringing caused by PCB trace inductance interacting with the device's 1.3 Ω intrinsic gate resistance and 1477 pF C_iss. This prevents false turn-on during high dV/dt events and ensures clean switching edges in buck converters operating above 300 kHz.

Can DMTH10H025LPS replace older 30 mΩ MOSFETs in existing designs without layout changes?

Yes-the PowerDI5060-8 footprint is standardized and mechanically compatible with prior-generation 30 mΩ devices in the same package. However, reduced R_DS(ON) lowers conduction loss and junction temperature; verify thermal relief on the drain pad meets the 79 W dissipation requirement, especially at elevated ambient temperatures.

Is the body diode suitable for synchronous rectification in continuous conduction mode (CCM)?

Yes-the body diode exhibits low V_SD (0.9–1.3 V) and controlled Q_RR (53.7 nC), making it viable for CCM synchronous rectification in buck-derived topologies. For optimal efficiency, pair with a gate driver that supports adaptive dead-time control to minimize shoot-through and reverse recovery losses.