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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMTH10H025LPSQ-13

Name: DMTH10H025LPSQ-13
Brand: Diodes Incorporated
SKU: DMTH10H025LPSQ-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMTH10H025LPSQ-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: DMTH10H025LPSQ-13.pdf

Description:: MOSFET N-CH 100V PWRDI5060

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Product details

Overview

DMTH10H025LPSQ-13 from Diodes Incorporated is an AEC-Q101-qualified 100V N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for continuous drain current of 45A at TC = +25°C, R_DS(ON) = 23mΩ @ V_GS = 10V, and operating up to +175°C junction temperature. It serves as a primary-side switching device or synchronous rectifier in automotive DC-DC converters.

For engineers reviewing the DMTH10H025LPSQ-13 datasheet, DMTH10H025LPSQ-13 pinout, DMTH10H025LPSQ-13 application, or DMTH10H025LPSQ-13 equivalent, key selection criteria include its 100% unclamped inductive switching (UIS) rating, low R_DS(ON) stability over temperature, and IATF 16949-manufactured traceability for safety-critical power stages.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for high-voltage automotive power conversion. Its 100V BVDSS and 23mΩ R_DS(ON) @ 10V enable efficient primary-side switching in 48V–60V bus systems with minimal conduction loss.

The device features integrated body diode with 0.9–1.3V V_SD @ 20A and 38.7ns reverse recovery time, supporting synchronous rectification in buck/boost topologies. Thermal resistance R_θJC = 1.9°C/W ensures effective heat transfer from junction to exposed drain pad under high-current pulsed operation.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS	100V - Withstands 100V drain-source blocking voltage, suitable for 48V automotive systems with transient margin.
RDS(ON)	23mΩ @ VGS = 10V, ID = 20A - Enables ≤0.92W conduction loss at 20A, reducing thermal load in compact layouts.
ID (TC = +25°C)	45A - Supports high-current primary-side switching without external heatsink when mounted on copper plane.
EAS	96mJ @ L = 3mH - Withstands repetitive avalanche energy during inductive turn-off, enhancing system robustness.
TJ Range	−55°C to +175°C - Certified for under-hood automotive environments including engine control units and battery management.
Qg	21nC - Low gate charge enables fast switching with moderate drive strength, minimizing switching loss at 100–500kHz.
VGS(TH)	1–3V - Ensures reliable turn-on with standard 3.3V/5V logic-level gate drivers in automotive microcontroller interfaces.

Pinout & Package

Package: PowerDI5060-8 - thermally enhanced 8-pin molded plastic package with exposed drain pad for low R_θJC (1.9°C/W), UL 94V-0 rated, halogen/antimony-free "Green" compound.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7 (Drain)	Power Drain (parallel-connected)	Seven pins tied internally to drain terminal; provides low-inductance, high-current path and thermal conduction to PCB copper.
8 (Source)	Power Source	Single-source connection point; referenced to gate drive return and system ground in half-bridge configurations.
G (Gate)	Control Input	Exposed gate pad on top surface (not numbered); requires controlled slew rate to limit dV/dt-induced shoot-through in bridge designs.

Key Features

Feature	Design Value
AEC-Q101 qualified + PPAP support	Validated for automotive production use with full change control, IATF 16949 manufacturing, and documented reliability testing.
100% UIS rated	Guaranteed avalanche capability (IAS = 8A @ L = 3mH, EAS = 96mJ) eliminates need for external snubbers in inductive load switching.
Low RDS(ON) vs. temperature	R_DS(ON) increases only 1.8× from 25°C to 175°C (Fig. 6), maintaining predictable conduction loss across full operating range.
Fast switching with low Qgd	Q_gd = 3.8nC minimizes Miller plateau duration, enabling clean turn-off and reduced cross-conduction risk in synchronous rectifiers.
RoHS 3 / "Green" compliant	Meets EU Directive 2015/863/EU with <900ppm Br, <900ppm Cl, <1000ppm Sb - supports end-of-life compliance and recycling requirements.

Applications

Automotive DC-DC Converters

Synchronous Rectification

Use Scenario: Step-down conversion from 48V battery rail to 12V auxiliary supply in electric vehicles.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 250kHz with 50% duty cycle in phase-shifted full-bridge topology.

Use Value: 23mΩ R_DS(ON) limits conduction loss to <1.1W at 22A peak, enabling >95% efficiency without forced air cooling.

Use Scenario: Secondary-side rectification in isolated 48V-to-12V LLC resonant converter for ADAS camera modules.

IC Role / Device Role / Timing Role: Synchronous rectifier driven by transformer-coupled gate signal, replacing Schottky diode to reduce forward drop.

Use Value: 0.9V V_SD and 38.7ns t_RR minimize reverse recovery loss, improving efficiency by 2.3% versus 40V Schottky at 15A output.

Engine Control Unit (ECU) Power Stages

On-Board Charger (OBC) Auxiliary Supplies

Use Scenario: High-side load switch controlling fuel injector driver ICs in gasoline direct injection systems.

IC Role / Device Role / Timing Role: Protected high-side switch with integrated avalanche ruggedness for inductive kickback suppression.

Use Value: 96mJ EAS withstands repeated 100V inductive transients from solenoid de-energization, eliminating external TVS diodes.

Use Scenario: Isolated auxiliary power supply generating 5V/3.3V rails for OBC control logic and communication interfaces.

IC Role / Device Role / Timing Role: Primary-side switch in flyback converter operating at 132kHz with variable frequency modulation.

Use Value: −55°C to +175°C TJ range ensures stable operation during OBC thermal cycling between ambient and battery-heated cabin environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL135N10F7AG	R_DS(ON) = 10.5mΩ @ 10V but rated only to +150°C; no AEC-Q101 documentation provided in public datasheet.	Lacks PPAP support and IATF 16949 traceability; unsuitable for Tier-1 automotive production without additional qualification.	Select only for non-safety-critical industrial prototypes where lower R_DS(ON) outweighs certification gaps.
IXTP110N10T	TO-220 package (R_θJC = 0.9°C/W), higher R_DS(ON) = 11.5mΩ, but no AEC-Q101 rating or UIS specification.	Requires mechanical mounting and heatsinking; incompatible with automated SMT assembly and space-constrained automotive modules.	Consider only for legacy through-hole designs or lab validation where thermal headroom exceeds 2× that of PowerDI5060-8.

Compared with STL135N10F7AG and IXTP110N10T, DMTH10H025LPSQ-13 uniquely combines AEC-Q101 qualification, +175°C operation, and SMT-optimized PowerDI5060-8 packaging-making it the only option certified for volume production in under-hood automotive power stages requiring zero second-source risk.

Availability

DMTH10H025LPSQ-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, engine control unit (ECU) power stages, and on-board charger (OBC) auxiliary supplies requiring stable component supply across extended temperature and long product lifecycles.

Supply support for DMTH10H025LPSQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets with ISO/TS 16949 and IATF 16949 certifications.

This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for high-temperature, high-reliability switching in 48V mild-hybrid and EV power architectures.

FAQ

Is DMTH10H025LPSQ-13 qualified for automotive use?

Yes. It is fully AEC-Q101 qualified, manufactured in IATF 16949-certified facilities, and supported by PPAP documentation. The device undergoes stress testing per AEC-Q101 Rev E, including HTGB, HTRB, and UIS, with guaranteed operation from −55°C to +175°C junction temperature.

What is the recommended PCB layout for thermal performance?

Use a minimum 25mm² exposed copper pad (2oz) connected to all seven drain pins via ≥8 thermal vias (0.3mm diameter, 0.8mm pitch). Maintain 0.2mm solder mask opening around the drain pad and avoid routing traces underneath. Follow Diodes' suggested pad layout (Document DS40613, Page 7) for optimal R_θJA = 46°C/W.

Does this MOSFET require a gate resistor for automotive EMI compliance?

Yes. A 10Ω series gate resistor is recommended to limit dV/dt during turn-on and suppress high-frequency ringing. This value balances switching speed (t_R ≈ 9.4ns) and EMI reduction, especially in 48V bus systems where fast edges couple into CAN/LIN buses. Layout must minimize gate loop inductance.

Can DMTH10H025LPSQ-13 replace older 100V MOSFETs in existing designs?

Yes, with verification. Its PowerDI5060-8 footprint is compatible with industry-standard 5x6mm DFN layouts. Electrical replacement requires checking gate threshold (1–3V), Qg (21nC), and SOA curves-especially for pulse-width and thermal derating. Diodes provides SPICE models and layout guidelines for drop-in evaluation.

DMTH10H025LPSQ-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 9.3A (Ta), 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 23mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 21 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1477 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 3.2W (Ta), 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PowerDI5060-8

DMTH10H025LPSQ-13 FAQ

1.How can I place an order for DMTH10H025LPSQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH10H025LPSQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH10H025LPSQ-13 reliable?

The price and inventory of DMTH10H025LPSQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH10H025LPSQ-13 is usually 5 days.

3.What payment methods are accepted for DMTH10H025LPSQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH10H025LPSQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH10H025LPSQ-13?

DMTH10H025LPSQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH10H025LPSQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH10H025LPSQ-13?

For technical support, including DMTH10H025LPSQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH10H025LPSQ-13 requirements.

6.How does Aetrix verify that DMTH10H025LPSQ-13 is sourced from the original manufacturer or authorized distributors?

All DMTH10H025LPSQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH10H025LPSQ-13 meets industry standards.

7.What is the process for return or replacement of DMTH10H025LPSQ-13?

All DMTH10H025LPSQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH10H025LPSQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH10H025LPSQ-13 part is unused and in its original packaging.

Return procedure for DMTH10H025LPSQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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