Diodes Incorporated DMTH10H025LPSWQ-13

Overview

DMTH10H025LPSWQ-13 from Diodes Incorporated is a 100V, 45A N-channel enhancement-mode MOSFET in PowerDI5060-8/SWP package, rated for +175°C operation and AEC-Q101 qualified. It delivers 23mΩ R_DS(ON) at V_GS = 10V and supports 90A pulsed drain current, enabling high-efficiency load switching in automotive battery management systems.

For engineers reviewing the DMTH10H025LPSWQ-13 datasheet, DMTH10H025LPSWQ-13 pinout, DMTH10H025LPSWQ-13 application, or DMTH10H025LPSWQ-13 equivalent, key selection criteria include its 1.9°C/W R_θJC, 100% unclamped inductive switching rating, low gate charge (21nC), and thermally robust PowerDI5060-8 exposed-drain package optimized for high-power density PCB layouts.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss while maintaining fast switching performance: t_D(ON) = 6.3ns, t_F = 8.2ns, and Q_gd/Q_g ratio of ~18%, supporting efficient synchronous rectification in DC-DC converters up to 500kHz.

Its thermal design centers on the exposed drain pad - delivering 79W power dissipation at T_C = +25°C with R_θJC = 1.9°C/W - and integrates a robust body diode with t_RR = 38.7ns and Q_RR = 53.7nC, suitable for hard-switched topologies requiring controlled reverse recovery.

Key Specifications

Pinout & Package

Package: PowerDI5060-8/SWP (Type UX) - thermally enhanced surface-mount package with exposed drain pad (pins 2–5 and 7–8), 5.15mm × 6.40mm footprint, 1.1mm height, and UL 94V-0 molding compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IXTP110N10T and STL130N10F7, DMTH10H025LPSWQ-13 uniquely balances AEC-Q101 compliance, 45A continuous rating, and PowerDI5060-8's superior thermal performance - making it optimal for automotive-grade high-current load switching where board area and under-hood temperature are critical constraints.

Availability

DMTH10H025LPSWQ-13 is available at Aetrix Electronics and suitable for automotive battery management, notebook power sequencing, and industrial motor control applications requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for DMTH10H025LPSWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.

This device belongs to Diodes' Automotive-Grade Power MOSFET product line, engineered specifically for high-temperature, high-reliability load switching and power conversion in safety-critical vehicle subsystems.

FAQ

What is the maximum gate-source voltage rating for DMTH10H025LPSWQ-13?

The absolute maximum V_GS is ±20V per the datasheet's Maximum Ratings table. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be limited to 10V–15V with transient suppression, especially in noisy automotive environments where load dump events may induce coupling.

Can DMTH10H025LPSWQ-13 be used in a high-side configuration without a charge pump?

No - as an N-channel MOSFET, it requires gate voltage ≥ V_DS + V_GS(TH) to fully enhance. In high-side switching, a bootstrap circuit or integrated charge pump (e.g., in MPQ6531-AEC1) is mandatory to lift the gate above the source potential. Direct logic-level drive is only viable in low-side configurations.

How does the PowerDI5060-8/SWP package compare thermally to SO-8 or DPAK?

PowerDI5060-8/SWP achieves R_θJC = 1.9°C/W - significantly lower than SO-8 (~62°C/W) and competitive with DPAK (~2.5°C/W) - due to its large exposed drain pad and optimized copper leadframe. This enables 79W dissipation at T_C = 25°C, making it ideal for high-power-density automotive PCBs where heatsinks are impractical.

Is the body diode suitable for continuous conduction mode (CCM) in synchronous rectification?

Yes - the body diode is characterized with t_RR = 38.7ns and Q_RR = 53.7nC at I_F = 20A, enabling efficient CCM operation in buck converters up to 500kHz. However, for best efficiency, ensure gate timing minimizes body diode conduction time, and verify layout parasitics do not induce voltage overshoot exceeding V_DSS.