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Diodes Incorporated DMTH10H032LFVW-7

Part No.:
DMTH10H032LFVW-7
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixDMTH10H032LFVW-7.pdf
Description:
MOSFET BVDSS: 61V~100V PowerDI33
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,254

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Product details

Overview

DMTH10H032LFVW-7 from Diodes Incorporated is a 100V, 175°C-rated N-channel enhancement-mode MOSFET in PowerDI3333-8 package, with RDS(ON) = 30 mΩ @ VGS = 10 V and 50 mΩ @ VGS = 4.5 V, rated for 26 A continuous drain current at TC = +25°C. It serves as a high-efficiency power switch in DC-DC converters and backlighting circuits where thermal robustness and low conduction loss are critical.

For engineers reviewing the DMTH10H032LFVW-7 datasheet, DMTH10H032LFVW-7 pinout, DMTH10H032LFVW-7 application, or DMTH10H032LFVW-7 equivalent, key selection criteria include its 100% UIS-tested ruggedness, wettable flank for automated optical inspection, and thermally optimized PowerDI3333-8 package enabling high-density PCB layouts in automotive and industrial power management designs.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for simultaneous low RDS(ON) and fast switching performance, with Ciss = 683 pF and Qg = 11.9 nC (VGS = 10 V), supporting efficient operation in synchronous buck and boost topologies. Its gate threshold voltage (VGS(TH) = 1.3–2.5 V) ensures reliable turn-on with standard 4.5 V logic-level drivers.

The device features an integrated body diode with VSD = 0.8–1.0 V at IS = 6 A and tRR = 31.5 ns, enabling use in freewheeling paths without external diodes. Thermal resistance RθJC = 3.3 °C/W and RθJA = 40 °C/W (2 oz copper, thermal bias) supports sustained operation up to TJ = +175°C in compact thermal environments.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS100 V - Withstands up to 100 V drain-source blocking voltage, suitable for 48 V bus and 12 V/24 V automotive systems.
RDS(ON)30 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 10 A, reducing heat sink requirements in high-current switches.
ID (max)26 A @ TC = +25°C - Supports high-power load switching in compact form factor with minimal derating at ambient.
Qg11.9 nC @ VGS = 10 V - Low gate charge enables fast switching with moderate drive strength, minimizing switching losses in 100–500 kHz converters.
TJ max+175°C - Rated for under-hood automotive and industrial environments where junction temperature exceeds 150°C.
EAS25.3 mJ - Confirmed avalanche energy rating ensures reliability during inductive load transients without external snubbers.
Ciss683 pF - Input capacitance value directly impacts gate drive loop stability and required driver output current.

Pinout & Package

Package: PowerDI3333-8 (SWP, Type UX), surface-mount, thermally enhanced with exposed drain pad and wettable flank terminals for solder joint inspection.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (D)DrainMain high-side current path; electrically and thermally connected to exposed metal pad for low RθJC.
Pins 2–4 (D)DrainParallel drain connections reduce current density and improve thermal spreading across package footprint.
Pins 5–6 (S)SourceReturn path for channel current; tied to ground reference and gate driver return in half-bridge configurations.
Pin 7 (G)GateControl terminal requiring <2.5 V threshold; sensitive to ESD but compatible with 3.3 V/5 V logic-level drivers.
Pin 8 (S)SourceAdditional source connection for improved current sharing and reduced parasitic inductance in high-dI/dt applications.

Key Features

FeatureDesign Value
100% UIS tested in productionGuarantees avalanche robustness per JEDEC JESD24-11, eliminating need for external clamping in inductive switching.
Wettable flank terminalsEnables automated optical inspection (AOI) of solder fillets on all four side terminals, improving manufacturing yield in SMT lines.
PowerDI3333-8 thermal design3.3 °C/W junction-to-case resistance allows >3.8 W dissipation on 2 oz copper board, outperforming SO-8 by ~2× in thermal efficiency.
AEC-Q101 qualification readyManufactured in IATF 16949-certified facilities with PPAP capability; meets automotive change control requirements upon request.
Halogen- and antimony-free "Green" constructionMeets RoHS 3 (2015/863/EU) with <900 ppm Br, <900 ppm Cl, <1000 ppm Sb, supporting eco-compliant end-product certifications.

Applications

Automotive LED Headlamp DriverIndustrial DC-DC Buck Converter

Use Scenario: High-brightness LED array switched at 200–500 kHz in vehicle headlamps with PWM dimming and overvoltage protection.

IC Role / Device Role / Timing Role: Primary high-side power switch in synchronous buck regulator delivering regulated 12 V to LED strings.

Use Value: 30 mΩ RDS(ON) minimizes conduction loss at 15 A peak, while 175°C rating ensures stable operation near engine bay heat sources.

Use Scenario: 48 V input to 5 V/10 A isolated or non-isolated converter powering PLC I/O modules in factory automation.

IC Role / Device Role / Timing Role: Main switching FET in high-frequency buck stage operating at 300 kHz with synchronous rectification.

Use Value: Low Qg (11.9 nC) and fast tF (9.3 ns) reduce switching losses, enabling >95% efficiency at full load without active cooling.

Portable Medical Device Power SupplySmart Building Lighting Control

Use Scenario: Battery-powered ultrasound or infusion pump using 24 V Li-ion input to generate isolated 3.3 V/5 V rails with strict thermal limits.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in flyback or forward converter, replacing Schottky diodes.

Use Value: Integrated body diode with 31.5 ns tRR and 0.8 V VSD reduces reverse recovery loss and improves light-load efficiency vs. discrete diode solutions.

Use Scenario: DALI or 0–10 V dimmable LED driver in commercial ceiling fixtures with space-constrained aluminum housing.

IC Role / Device Role / Timing Role: Low-side switch controlling PWM duty cycle to LED string via constant-current regulator feedback loop.

Use Value: Wettable flank terminals enable AOI verification of solder joints in high-reliability lighting assemblies, reducing field failure risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMTH10H032LQ-7Same die, QFN-8 package (no wettable flank); RθJA = 50 °C/W (vs. 40 °C/W).Lacks AOI-compatible terminals; suited for cost-sensitive, non-automated assembly.Select when board-level AOI is not required and thermal margin permits higher RθJA.
IPB180N10N3 G100 V, 180 A rated, TO-263 package; RDS(ON) = 3.2 mΩ @ 10 V but 5× larger footprint and 3× higher Qg.Designed for high-current inverters; over-specified for compact DC-DC where size and drive strength matter.Choose only if >50 A current handling or extreme thermal cycling endurance is mandatory.

Compared with DMTH10H032LQ-7, the DMTH10H032LFVW-7 offers superior manufacturability via wettable flanks and better thermal performance; versus IPB180N10N3 G, it delivers optimal size-efficiency balance for space-constrained 20–30 A applications without over-engineering.

Availability

DMTH10H032LFVW-7 is available at Aetrix Electronics and suitable for automotive LED drivers, industrial DC-DC converters, and portable medical power supplies requiring stable component supply and long-term lifecycle support.

Supply support for DMTH10H032LFVW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' PowerDI® portfolio targeting high-reliability, thermally demanding power switching applications in automotive, industrial, and medical markets-designed specifically for compact, high-efficiency DC-DC conversion and load switching.

FAQ

What is the maximum continuous drain current at TC = +100°C?

The DMTH10H032LFVW-7 supports 18 A continuous drain current at case temperature +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal constraints of the PowerDI3333-8 package and must be validated against actual PCB layout and airflow conditions.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor is recommended to dampen ringing and limit peak gate current during switching. With Qg = 11.9 nC and typical gate driver rise/fall times, a 5–10 Ω series resistor balances switching speed and EMI control without compromising efficiency in 200–500 kHz applications.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes-the body diode has tRR = 31.5 ns and QRR = 94.6 nC, verified under IF = 6 A and di/dt = 500 A/μs. These values support synchronous rectification in buck converters up to 500 kHz, though external Schottky diodes may be preferred for ultra-low VF at light loads.

Can this part be used in AEC-Q101-compliant designs?

While not pre-qualified to AEC-Q101, the DMTH10H032LFVW-7 is manufactured in IATF 16949-certified facilities and supports PPAP documentation. Customers requiring formal qualification should contact Diodes Incorporated to initiate the AEC-Q101 stress test program for this specific part number.

DMTH10H032LFVW-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Bulk
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
26A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
30mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
11.9 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
683 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
1.7W (Ta)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
PowerDI3333-8 (SWP) Type UX

DMTH10H032LFVW-7 FAQ

1.How can I place an order for DMTH10H032LFVW-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH10H032LFVW-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH10H032LFVW-7 reliable?

The price and inventory of DMTH10H032LFVW-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH10H032LFVW-7 is usually 5 days.

3.What payment methods are accepted for DMTH10H032LFVW-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH10H032LFVW-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH10H032LFVW-7?

DMTH10H032LFVW-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH10H032LFVW-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH10H032LFVW-7?

For technical support, including DMTH10H032LFVW-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH10H032LFVW-7 requirements.

6.How does Aetrix verify that DMTH10H032LFVW-7 is sourced from the original manufacturer or authorized distributors?

All DMTH10H032LFVW-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH10H032LFVW-7 meets industry standards.

7.What is the process for return or replacement of DMTH10H032LFVW-7?

All DMTH10H032LFVW-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH10H032LFVW-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH10H032LFVW-7 part is unused and in its original packaging.

Return procedure for DMTH10H032LFVW-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMTH10H032LFVW-7 Tags

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