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Diodes Incorporated DMTH10H032LFVWQ-7

Part No.:
DMTH10H032LFVWQ-7
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixDMTH10H032LFVWQ-7.pdf
Description:
MOSFET BVDSS: 61V~100V PowerDI33
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,894

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Product details

Overview

DMTH10H032LFVWQ-7 from Diodes Incorporated is an AEC-Q101-qualified 100V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, delivering 30 mΩ RDS(ON) at VGS = 10 V and 26 A continuous drain current at TC = +25°C. It operates up to +175°C junction temperature and supports automotive backlighting, DC-DC converters, and power-management functions.

For engineers reviewing the DMTH10H032LFVWQ-7 datasheet, DMTH10H032LFVWQ-7 pinout, DMTH10H032LFVWQ-7 application, or DMTH10H032LFVWQ-7 equivalent, key selection criteria include its wettable-flank PowerDI3333-8 package for optical inspection, 100% production-tested UIS robustness, and AEC-Q101 qualification with PPAP support.

Technical Context

This MOSFET uses a trench-gate silicon process optimized for low RDS(ON) and fast switching in high-reliability automotive power stages. Its gate threshold voltage (1.3–2.5 V) enables compatibility with 3.3 V and 5 V logic-level drive, while its 6.3 nC total gate charge at VGS = 4.5 V supports efficient PWM control in compact DC-DC topologies.

The device integrates a body diode with 0.8–1.0 V forward voltage at 6 A and exhibits 94.6 nC reverse recovery charge - critical for synchronous rectification and flyback snubber design. Thermal resistance RθJC = 3.3 °C/W enables direct thermal coupling to PCB copper planes in space-constrained modules.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS100 V - Withstands transient overvoltage spikes up to 100 V in automotive 42 V systems and industrial 24 V/48 V rails.
RDS(ON)30 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 10 A, reducing thermal load in high-current power switches.
ID (max)26 A @ TC = +25°C - Supports peak load currents in LED backlight drivers and buck converter high-side switches.
EAS25.3 mJ - Confirmed unclamped inductive switching energy rating ensures reliability under worst-case inductive turn-off stress.
TJ range−55°C to +175°C - Validated operation across full automotive ambient range including engine bay and under-hood environments.
Qg11.9 nC @ VGS = 10 V - Enables fast turn-on with minimal gate driver power consumption in high-frequency (>500 kHz) switching applications.
Ciss683 pF - Defines input capacitance affecting gate drive loop stability and Miller effect in half-bridge configurations.

Pinout & Package

Package: PowerDI3333-8/SWP (Type UX), thermally enhanced surface-mount package with exposed drain pad and wettable flank terminals for automated optical inspection (AOI) and improved solder joint reliability.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4 (Top row)Drain (D)Four parallel drain connections tied to internal die drain metallization and exposed copper pad - primary heat path and high-current return path.
5Gate (G)Single gate input terminal - requires low-inductance routing to minimize ringing and ensure clean switching edge control.
6, 7, 8 (Bottom row)Source (S)Three-source terminals connected to source metallization - forms low-impedance return path for load current and gate drive reference.

Key Features

FeatureDesign Value
100% UIS tested in productionGuarantees minimum 25.3 mJ avalanche energy handling per device - eliminates screening failures in inductive load switching.
Wettable flank terminalsEnables AOI-compatible solder joint inspection on all side terminals - improves manufacturing yield and field-reliability traceability.
AEC-Q101 qualified + PPAP capableValidated for automotive use with change control, IATF 16949 manufacturing, and full documentation for Tier-1 supplier audits.
PowerDI3333-8 thermal performanceRθJC = 3.3 °C/W allows >3.8 W power dissipation on 2 oz copper with thermal bias - reduces need for external heatsinks in space-limited modules.

Applications

Automotive LED Backlighting48 V Automotive DC-DC Converters

Use Scenario: High-brightness LED string control in instrument clusters and center displays requiring precise current regulation and thermal resilience.

IC Role / Device Role / Timing Role: High-side switch controlling LED cathode current path with fast turn-on/turn-off to enable PWM dimming at >1 kHz.

Use Value: 30 mΩ RDS(ON) minimizes power loss in 2–5 A backlight strings; +175°C rating ensures stable operation near display electronics.

Use Scenario: Primary-side high-side switch in 48 V-to-12 V buck converters powering ADAS sensors and infotainment subsystems.

IC Role / Device Role / Timing Role: Synchronous rectifier or main switch operating at 300–600 kHz with low Qg enabling efficient gate drive.

Use Value: 11.9 nC Qg at 10 V reduces gate driver losses; 100 V VDSS provides margin against load-dump transients in 48 V architectures.

Engine Control Unit Power ManagementIndustrial 24 V Motor Driver Stages

Use Scenario: Load switching for solenoid drivers, fuel injectors, and HVAC actuators in ECU modules exposed to under-hood temperatures.

IC Role / Device Role / Timing Role: Robust high-current switch with integrated body diode for inductive kickback clamping during de-energization.

Use Value: 25.3 mJ EAS rating handles repeated inductive energy dissipation without degradation; AEC-Q101 qualification ensures long-term reliability.

Use Scenario: Half-bridge high-side switch in compact 24 V BLDC motor controllers for factory automation and robotics.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET paired with complementary low-side device in 3-phase inverter stage.

Use Value: Wettable flank terminals enable AOI verification of solder joints in high-vibration environments; 683 pC Ciss supports stable gate drive loop design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL100N10F7100 V, 3.2 mΩ RDS(ON), TO-263 package, higher current but larger footprint and no wettable flanks.Requires manual optical inspection; unsuitable for ultra-thin modules due to height and thermal pad access limitations.Select when higher current density is needed and board space allows TO-263 mounting with external heatsinking.
IXTP110N10T100 V, 11 mΩ RDS(ON), TO-220 package, non-AEC-Q101 rated, no PPAP support.Lacks automotive qualification and change control documentation - limited to industrial or consumer-grade designs.Choose only for cost-sensitive non-automotive applications where AEC-Q101 compliance is not required.

Compared with STL100N10F7 and IXTP110N10T, the DMTH10H032LFVWQ-7 uniquely combines AEC-Q101 qualification, wettable flank inspection capability, and PowerDI3333-8's low-profile thermal efficiency - making it optimal for space-constrained, safety-critical automotive power stages where manufacturability and qualification traceability are mandatory.

Availability

DMTH10H032LFVWQ-7 is available at Aetrix Electronics and suitable for automotive LED backlighting, 48 V DC-DC conversion, and engine control unit power management requiring stable component supply across extended temperature ranges and rigorous quality traceability.

Supply support for DMTH10H032LFVWQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

This MOSFET belongs to Diodes' automotive-qualified PowerMOS family, engineered specifically for high-efficiency, high-temperature switching in safety-critical vehicle subsystems with stringent PPAP and IATF 16949 compliance requirements.

FAQ

What is the maximum continuous drain current at TC = +100°C?

The DMTH10H032LFVWQ-7 supports 18 A continuous drain current at case temperature +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by package RθJC = 3.3 °C/W and silicon safe operating area constraints under sustained conduction.

Does this MOSFET require a gate resistor for automotive PWM operation?

A gate resistor is recommended to dampen ringing caused by parasitic inductance in the gate loop. With 1.2 Ω typical gate resistance and 11.9 nC total gate charge, a 5–10 Ω series resistor ensures controlled 10–20 ns rise/fall times while preventing shoot-through in half-bridge configurations.

Is the body diode suitable for synchronous rectification in DC-DC converters?

Yes - the body diode has 0.8–1.0 V forward voltage at 6 A and 31.5 ns reverse recovery time, enabling use in non-synchronous or quasi-synchronous buck converters. However, for full synchronous rectification, an external Schottky or MOSFET with lower VF and QRR is preferred to minimize conduction and switching losses.

How does the wettable flank feature improve manufacturing yield?

The wettable flank geometry exposes vertical sidewalls of all three terminal types (D, G, S) to solder paste, allowing automated optical inspection (AOI) systems to verify solder fillet formation and joint integrity - reducing field failures from voided or insufficient solder joints in high-vibration automotive assemblies.

DMTH10H032LFVWQ-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Bulk
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
26A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
30mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
11.9 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
683 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
1.7W (Ta)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
PowerDI3333-8 (SWP) Type UX

DMTH10H032LFVWQ-7 FAQ

1.How can I place an order for DMTH10H032LFVWQ-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH10H032LFVWQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH10H032LFVWQ-7 reliable?

The price and inventory of DMTH10H032LFVWQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH10H032LFVWQ-7 is usually 5 days.

3.What payment methods are accepted for DMTH10H032LFVWQ-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH10H032LFVWQ-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH10H032LFVWQ-7?

DMTH10H032LFVWQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH10H032LFVWQ-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH10H032LFVWQ-7?

For technical support, including DMTH10H032LFVWQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH10H032LFVWQ-7 requirements.

6.How does Aetrix verify that DMTH10H032LFVWQ-7 is sourced from the original manufacturer or authorized distributors?

All DMTH10H032LFVWQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH10H032LFVWQ-7 meets industry standards.

7.What is the process for return or replacement of DMTH10H032LFVWQ-7?

All DMTH10H032LFVWQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH10H032LFVWQ-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH10H032LFVWQ-7 part is unused and in its original packaging.

Return procedure for DMTH10H032LFVWQ-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMTH10H032LFVWQ-7 Tags

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