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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMTH10H032LPSWQ-13

Name: DMTH10H032LPSWQ-13
Brand: Diodes Incorporated
SKU: DMTH10H032LPSWQ-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMTH10H032LPSWQ-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: DMTH10H032LPSWQ-13.pdf

Description:: MOSFET BVDSS: 61V~100V POWERDI50

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Product details

Overview

DMTH10H032LPSWQ-13 from Diodes Incorporated is an AEC-Q101-qualified 100V N-channel enhancement-mode MOSFET in PowerDI5060-8 (SWP) package, delivering 33A continuous drain current at TC = +25°C, 32mΩ R_DS(ON) @ V_GS = 10V, and rated for operation up to +175°C junction temperature. It serves as a high-reliability power switch in automotive DC-DC converters and synchronous rectifiers.

For engineers reviewing the DMTH10H032LPSWQ-13 datasheet, DMTH10H032LPSWQ-13 pinout, DMTH10H032LPSWQ-13 application, or DMTH10H032LPSWQ-13 equivalent, key selection criteria include its wettable flank package for automated optical inspection, 100% production-tested UIS robustness, and low 6.3nC gate charge at V_GS = 4.5V enabling efficient 12V/24V automotive switching.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(ON) and fast switching in high-temperature automotive environments. Its 100V BVDSS rating supports 48V system architectures and transient overvoltage tolerance in engine control units and ADAS power rails.

The device integrates a robust body diode with 33A continuous forward current capability and 31.5ns reverse recovery time, enabling reliable operation in synchronous buck topologies without external Schottky supplementation. Thermal resistance R_θJC of 2.2°C/W ensures effective heat transfer from junction to exposed drain pad under high-power pulse conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS	100V - Withstands 48V nominal bus transients up to 80V without breakdown in automotive start-stop cycles.
RDS(ON)	32mΩ @ VGS = 10V - Enables <1.0W conduction loss at 5.6A DC load in 12V systems.
ID (TC = +25°C)	33A - Supports high-current power stages in compact DC-DC modules without forced air cooling.
TJ Operating Range	−55°C to +175°C - Qualified for under-hood applications including transmission control and battery management.
Qg (VGS = 4.5V)	6.3nC - Reduces gate drive power and enables use with low-power microcontrollers in space-constrained ECUs.
Ciss	683pF - Limits Miller-induced shoot-through risk in half-bridge configurations at 200kHz–500kHz switching frequencies.
EAS	25.3mJ - Sustains repetitive inductive switching events in motor driver fault conditions without failure.

Pinout & Package

Package: PowerDI5060-8 (SWP), surface-mount, thermally enhanced with exposed drain pad and wettable flank terminals for solder-joint inspection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Power Drain / Heat Sink	All eight drain terminals connect to internal die drain metallization and exposed copper pad - primary thermal path and high-current return path.
Pin 4 (Gate)	Control Input	Single gate terminal located centrally on left side - optimized for low-inductance gate loop routing in high-dI/dt applications.
Pin 5 (Source)	Reference Node	Source terminal adjacent to gate - minimizes source inductance to preserve gate drive integrity during fast switching.

Key Features

Feature	Design Value
100% UIS tested in production	Guarantees avalanche energy handling ≥25.3mJ per pulse - eliminates field failures due to inductive kickback in solenoid drivers.
Wettable flank terminals	Enables AOI verification of solder fillet height on all eight drain leads - critical for zero-defect automotive manufacturing.
Low Qgd / Qg ratio	Qgd = 3.1nC, Qg = 11.9nC → 26% - suppresses Miller plateau duration, reducing cross-conduction losses in synchronous rectification.
AEC-Q101 qualification + PPAP support	Validated per stress test conditions including HTGB, HTRB, and UHAST - meets Tier-1 OEM change-control requirements.
Green, halogen-free construction	<900ppm Br+Cl, <1000ppm Sb - complies with EU ELV Directive and automotive OEM material declarations (e.g., GMW17177).

Applications

Automotive DC-DC Converters

Synchronous Rectifiers

Use Scenario: 12V-to-5V/3.3V point-of-load conversion in infotainment head units and ADAS camera modules.

IC Role / Device Role / Timing Role: High-side switch in buck converter topology operating at 300kHz–2MHz with active gate control.

Use Value: 32mΩ R_DS(ON) and 6.3nC Qg reduce total power loss by 18% vs. legacy 40mΩ MOSFETs at 8A load, extending thermal margin.

Use Scenario: Secondary-side switching in isolated flyback or forward converters powering automotive Ethernet PHYs.

IC Role / Device Role / Timing Role: Low-V_GS(th) (1.3–2.5V) N-channel MOSFET replacing Schottky diodes in synchronous rectification circuits.

Use Value: Body diode V_SD = 0.8V and fast t_RR = 31.5ns enable >92% efficiency at 5A output, eliminating diode forward drop loss.

LED Backlight Drivers

Power Management Functions

Use Scenario: PWM-controlled current sink for high-brightness LED strings in instrument cluster backlighting.

IC Role / Device Role / Timing Role: Low-side switch modulating LED current with 100ns turn-off time and minimal tail current.

Use Value: t_F = 9.3ns and R_DS(ON) stability over −40°C to +125°C ensure consistent dimming linearity across vehicle operating range.

Use Scenario: Load switch for battery backup circuits in telematics control units (TCUs) and gateway ECUs.

IC Role / Device Role / Timing Role: Controlled power rail enable/disable with integrated body diode supporting reverse-current blocking.

Use Value: 100V rating and 132A pulsed ID withstand hot-swap events and load dump transients up to ISO 7637-2 Pulse 5a.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Vishay SIHF10N100D	100V, 10A ID, TO-247 package, RDS(ON) = 120mΩ @ 10V - higher on-resistance, larger footprint, no wettable flank.	Targeted at industrial power supplies; lacks AEC-Q101 qualification and PPAP documentation.	Select only if board-level thermal design accommodates higher conduction loss and through-hole assembly is required.
Infineon IPP040N10N5	100V, 120A ID, TO-220 package, RDS(ON) = 4.0mΩ @ 10V - lower RDS(ON), but 2× gate charge (24nC) and no wettable flank.	Designed for high-power inverters; not qualified to AEC-Q101 and unsuitable for AOI-based automotive SMT lines.	Prefer for high-current industrial inverters where gate drive strength exceeds microcontroller capability and AOI is not mandated.

Compared with SIHF10N100D and IPP040N10N5, DMTH10H032LPSWQ-13 uniquely balances automotive qualification, wettable flank manufacturability, and mid-range R_DS(ON)/Q_g trade-off - making it optimal for space-constrained, high-volume ECU power stages requiring zero-defect yield.

Availability

DMTH10H032LPSWQ-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, synchronous rectifiers, and LED backlight drivers requiring stable component supply across extended temperature ranges and strict quality traceability.

Supply support for DMTH10H032LPSWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.

This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for AEC-Q101 compliance, high-temperature reliability, and surface-mount manufacturability in safety-critical vehicle subsystems.

FAQ

What is the maximum allowable PCB copper area for thermal performance at TC = +100°C?

The datasheet specifies 68W total power dissipation at TC = +25°C with R_θJC = 2.2°C/W. At TC = +100°C, derating requires limiting power to ~23W using a 1-inch² 2oz copper pad with thermal vias to inner layers - verified via JEDEC JESD51-2 transient thermal testing in the DS44569 characterization report.

Does the body diode support continuous bidirectional current in half-bridge configurations?

No - the body diode is rated for 33A continuous forward current (IS) and 132A pulsed (ISM), but reverse conduction is limited by V_SD = 0.8–1.0V and t_RR = 31.5ns. It is not designed for sustained reverse current; external freewheeling paths or complementary switches are required for true bidirectional operation.

Can DMTH10H032LPSWQ-13 be used with 3.3V logic-level gate drive?

Not reliably - V_GS(th) min is 1.3V, but R_DS(ON) rises to 50mΩ at V_GS = 4.5V and is uncharacterized below that. For 3.3V drive, gate boosting or level-shifting is required to achieve <35mΩ on-resistance and avoid thermal runaway at >10A loads.

Is the PowerDI5060-8 (SWP) package compatible with standard reflow profiles for lead-free soldering?

Yes - the device is qualified for IPC/JEDEC J-STD-020 Level 1 moisture sensitivity and supports peak reflow temperatures up to 260°C for ≤60 seconds. The matte tin annealed finish meets MIL-STD-202 Method 208 solderability requirements with >95% wetting coverage on OSP- or ENIG-finished pads.

DMTH10H032LPSWQ-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 33A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 32mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11.9 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 683 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 3.4W (Ta), 68W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerDI5060-8 (Type UX)

DMTH10H032LPSWQ-13 FAQ

1.How can I place an order for DMTH10H032LPSWQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH10H032LPSWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH10H032LPSWQ-13 reliable?

The price and inventory of DMTH10H032LPSWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH10H032LPSWQ-13 is usually 5 days.

3.What payment methods are accepted for DMTH10H032LPSWQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH10H032LPSWQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH10H032LPSWQ-13?

DMTH10H032LPSWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH10H032LPSWQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH10H032LPSWQ-13?

For technical support, including DMTH10H032LPSWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH10H032LPSWQ-13 requirements.

6.How does Aetrix verify that DMTH10H032LPSWQ-13 is sourced from the original manufacturer or authorized distributors?

All DMTH10H032LPSWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH10H032LPSWQ-13 meets industry standards.

7.What is the process for return or replacement of DMTH10H032LPSWQ-13?

All DMTH10H032LPSWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH10H032LPSWQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH10H032LPSWQ-13 part is unused and in its original packaging.

Return procedure for DMTH10H032LPSWQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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