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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMTH10H032SPSW-13

Name: DMTH10H032SPSW-13
Brand: Diodes Incorporated
SKU: DMTH10H032SPSW-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMTH10H032SPSW-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: DMTH10H032SPSW-13.pdf

Description:: MOSFET BVDSS: 61V~100V PowerDI50

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Product details

Overview

DMTH10H032SPSW from Diodes Incorporated is a 100V, 25A N-channel enhancement-mode MOSFET in PowerDI5060-8 (SWP) package, with R_DS(ON) = 32 mΩ @ V_GS = 10 V and 100% production-tested UIS capability. It serves as a high-efficiency synchronous rectifier or primary switch in DC-DC converters operating up to +175°C junction temperature.

For engineers reviewing the DMTH10H032SPSW datasheet, DMTH10H032SPSW pinout, DMTH10H032SPSW application, or DMTH10H032SPSW equivalent, key selection criteria include its low R_DS(ON), fast switching (t_R = 2.7 ns), wettable flank for optical inspection, and AEC-Q101 readiness for automotive power management designs.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss while maintaining controlled gate charge (Q_g = 8.0 nC @ V_GS = 10 V) and minimized reverse transfer capacitance (C_rss = 6.0 pF). Its thermal design supports continuous operation at T_J = +175°C with R_θJC = 3.9 °C/W.

The device integrates a robust body diode with V_SD = 0.8–1.0 V @ I_S = 5 A and t_RR = 33.2 ns, enabling reliable freewheeling in hard-switched topologies. The PowerDI5060-8 package features an exposed drain pad for direct thermal coupling and wettable flanks for automated AOI verification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Withstands up to 100 V drain-source blocking voltage without breakdown.
R_DS(ON)	32 mΩ @ V_GS = 10 V - Enables <1.6 W conduction loss at 20 A, critical for high-current power stages.
I_D (T_C = +25°C)	25 A - Continuous drain current rating under ideal heatsink conditions.
Q_g	8.0 nC @ V_GS = 10 V - Determines gate drive energy and switching transition time in PWM circuits.
t_R / t_F	2.7 ns / 6.2 ns - Supports >1 MHz switching frequencies with minimal overlap loss.
T_J max	+175°C - Qualified for under-hood automotive and industrial environments without derating.
E_AS	25.3 mJ - Energy-handling capability during unclamped inductive switching events.

Pinout & Package

Package: PowerDI5060-8 (SWP), surface-mount, thermally enhanced with exposed drain pad and wettable flank terminals.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (S)	Source	Low-side reference node; connected to PCB ground plane for thermal and electrical return path.
Pins 2–4, 6–7 (D)	Drain	High-current power output node; tied to exposed copper pad for thermal dissipation and low-inductance routing.
Pin 5 (G)	Gate	Control input; requires <8.0 nC charge for full enhancement; sensitive to ESD (±20 V rating).
Pins 8, S (shared)	Source	Secondary source connection; paralleled with Pin 1 to reduce source inductance in high-dI/dt applications.

Key Features

Feature	Design Value
100% UIS tested in production	Guarantees avalanche ruggedness up to I_AS = 13 A and E_AS = 25.3 mJ per pulse-no screening failures in final test.
Wettable flank leads	Enables automated optical inspection of solder fillet height on all eight side terminals-critical for automotive PPAP compliance.
Low C_iss / C_rss ratio	544 pF / 6.0 pF - Reduces Miller effect, improving gate drive stability and dV/dt immunity in high-side configurations.
Green, halogen-free construction	<900 ppm Br, <900 ppm Cl, <1000 ppm Sb - Meets JEDEC J-STD-709B and RoHS 3 requirements for eco-sensitive supply chains.

Applications

Automotive DC-DC Converters

Industrial LED Backlight Drivers

Use Scenario: 12 V to 5 V/3.3 V buck converter in ADAS camera module with ambient temperature up to +105°C.

IC Role / Device Role / Timing Role: Primary high-side synchronous rectifier switch operating at 500 kHz with forced-air cooling.

Use Value: R_DS(ON) = 32 mΩ ensures <1.3 W conduction loss at 20 A, reducing thermal load on compact PCB layout.

Use Scenario: Constant-current LED driver for commercial signage requiring dimming down to 1% with minimal thermal drift.

IC Role / Device Role / Timing Role: Low-side PWM switch controlling LED string current in boost topology with 100 kHz switching.

Use Value: Fast t_F = 6.2 ns enables precise current regulation across wide dimming range without tail current artifacts.

Server VRM High-Efficiency Rectification

Industrial Motor Control Gate Drivers

Use Scenario: 48 V to 12 V intermediate bus converter in datacenter PSU with >95% efficiency target.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC resonant topology with zero-voltage switching assist.

Use Value: Body diode V_SD = 0.8 V and t_RR = 33.2 ns minimize reverse recovery loss during dead-time transitions.

Use Scenario: Half-bridge high-side switch in 24 V BLDC motor controller for factory automation actuators.

IC Role / Device Role / Timing Role: High-voltage level-shifted switch driving gate of low-side MOSFET in 3-phase inverter stage.

Use Value: +175°C T_J rating allows operation in sealed enclosures without active cooling, simplifying mechanical design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB113N10N3 G	R_DS(ON) = 11.3 mΩ @ V_GS = 10 V; TO-263-7 package; higher Q_g = 42 nC.	Better conduction loss but slower switching; requires larger gate driver; unsuitable for >300 kHz designs.	Select when thermal margin is constrained and switching frequency ≤ 200 kHz.
DMTH10H032LPSW-13	Same die, PowerDI5060-8L package; longer leadform; identical R_DS(ON), Q_g, and thermal specs.	Compatible with wave-solder processes; not optimized for AOI; lacks wettable flank certification.	Select for non-automotive, cost-sensitive consumer applications where optical inspection is not required.

Compared with IPB113N10N3 G, DMTH10H032SPSW trades 2.8× higher R_DS(ON) for 5.25× lower Q_g and superior manufacturability via wettable flanks; versus DMTH10H032LPSW-13, it adds AOI compatibility without sacrificing electrical performance.

Availability

DMTH10H032SPSW is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial LED backlight drivers, and server VRM high-efficiency rectification requiring stable component supply across extended temperature ranges.

Supply support for DMTH10H032SPSW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices for power management, signal integrity, and connectivity applications.

This MOSFET belongs to Diodes' PowerDI® high-reliability power transistor family, engineered for automotive-grade ruggedness, high-temperature operation, and automated manufacturing compatibility.

FAQ

What is the maximum allowable gate-source voltage for DMTH10H032SPSW?

The absolute maximum V_GS is ±20 V per datasheet DS44570 Rev. 2–2. Operation beyond ±15 V risks permanent gate oxide damage. Recommended drive is 10 V for full enhancement with margin; 4.5 V yields partial turn-on (R_DS(ON) increases significantly below threshold).

Does DMTH10H032SPSW meet AEC-Q101 qualification?

Yes-the device is AEC-Q101 qualified and manufactured in IATF 16949 certified facilities. It undergoes 100% UIS testing and meets all stress tests including HTGB, HTRB, and temperature cycling per AEC-Q101 Rev. D.

How does the wettable flank feature improve assembly yield?

The wettable flank geometry on all eight side terminals enables automated optical inspection (AOI) to verify solder fillet height and coplanarity. This eliminates reliance on X-ray for hidden-joint validation and reduces field failure rates in automotive PPAP programs.

Can DMTH10H032SPSW be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(ON) (normalized increase to 1.6× at +175°C) enables stable current sharing. Designers must match gate loop inductance and use Kelvin source connections to avoid oscillation; layout symmetry is critical for >2-device arrays.

DMTH10H032SPSW-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 32mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 544 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 3.2W (Ta)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerDI5060-8 (Type UX)

DMTH10H032SPSW-13 FAQ

1.How can I place an order for DMTH10H032SPSW-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH10H032SPSW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH10H032SPSW-13 reliable?

The price and inventory of DMTH10H032SPSW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH10H032SPSW-13 is usually 5 days.

3.What payment methods are accepted for DMTH10H032SPSW-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH10H032SPSW-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH10H032SPSW-13?

DMTH10H032SPSW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH10H032SPSW-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH10H032SPSW-13?

For technical support, including DMTH10H032SPSW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH10H032SPSW-13 requirements.

6.How does Aetrix verify that DMTH10H032SPSW-13 is sourced from the original manufacturer or authorized distributors?

All DMTH10H032SPSW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH10H032SPSW-13 meets industry standards.

7.What is the process for return or replacement of DMTH10H032SPSW-13?

All DMTH10H032SPSW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH10H032SPSW-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH10H032SPSW-13 part is unused and in its original packaging.

Return procedure for DMTH10H032SPSW-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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